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- 1. Phys. Rev. B 77, 195204 (2008) , “Identification of antisite carbon split-interstitial defects in 4H-SiC”, J. W. Steeds, W. SullivanA rich variety of optical centers with high energy local vibrational modes has been found in electron-irradiated 4H-SiC in both the as-irradiated and annealed states. These energies have been measured and the annealing dependence of the optical centers has been investigated by low-temperature... (Read more)
- 2. Phys. Rev. B 77, 195203 (2008) , “Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC”, J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. WellmannThis paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at... (Read more)
- 3. J. Appl. Phys. 99, 011101 (2006) , “Degradation of hexagonal silicon-carbide-based bipolar devices”, M. Skowronski and S. HaOnly a few years ago, an account of degradation of silicon carbide high-voltage p-i-n diodes was presented at the European Conference on Silicon Carbide and Related Compounds (Kloster Banz, Germany, 2000). This report was followed by the intense effort of multiple groups... (Read more)
- 4. J. Appl. Phys. 92, 889-894 (2002) , “Ramification of micropipes in SiC crystals”, M. Yu. Gutkin, A. G. Sheinerman, T. S. Argunova, J. H. Je, H. S. Kang, Y. Hwu, W.-L. TsaiThe ramification of micropipes is observed using scanning electron microscopy, optical microscopy, and synchrotron x-ray radiography. The conditions for the ramification of dislocated micropipes are determined theoretically within a model when the angles between dislocation lines are small. It is... (Read more)
- 5. J. Appl. Phys. 89, 4625-4630 (2001) , “Hexagonal voids and the formation of micropipes during SiC sublimation growth”, Thomas A. Kuhr, Edward K. Sanchez, Marek Skowronski, William M. Vetter, Michael DudleyHexagonal voids observed in sublimation grown SiC boules were examined using optical microscopy, atomic force microscopy (AFM), scanning electron microscopy, KOH etching, and synchrotron white-beam x-ray topography. Voids formed at imperfections in the attachment layer between the seed and crucible... (Read more)
- 6. J. Appl. Phys. 88, 1407 (2000) , “Structural improvement in sublimation epitaxy of 4H–SiC”, M. Syväjärvi, R. Yakimova, H. Jacobsson, and E. JanzénThe sublimation epitaxy growth process has been studied. The structural quality of the grown layers improves compared with the substrate mainly due to a diminished domain structure misorientation. Optical microscopy shows that the as-grown surfaces are free of typical defects appearing in silicon... (Read more)
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Updated at 2010-07-20 16:50:39
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Materials
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Technique
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Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
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Element(65 tags)
Energy(8 tags)
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Sample(17 tags)
Spin(8 tags)
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