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- 1. Phys. Rev. B 74, 174122 (2006) , “Lithium colloids and color center creation in electron-irradiated Li2NH observed by electron-spin resonance”, F. Beuneu, P. Vajda, Y. Nakamori, and S. OrimoWe have irradiated Li2NH powder with MeV electrons at room temperature and investigated the introduced defects with electron spin resonance. Conduction electron spin resonance indicates the presence of nanosize metallic Li colloids seen as a Lorentzian line with a g=2.0023 and a... (Read more)
- 2. Radiat. Eff. 8, 229 (1971) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon by EPR Measurements”, B. Goldstein.Single crystal sylicon, both with and without oxygen, has been diffused with lithium to concentrations ~1017/cm3, irradiated woth 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presene of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li---one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spin of 1/2. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiatioin at 40ºK followecd by annealing at higher temperatures show that both EPR defects described above begin to form at about 200ºK and begin to decrease at about 275ºK---just as does the 250ºK reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitial which produce a (Li-O-interstitial) complex in O-containing Si, and (Li-interstitial) complex in O-free Si.
- 3. Phys. Rev. B 2, 4110 (1970) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon”, B. Goldstein.Single-crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ? 1017/cm3, irradiated with 1-1.5-MeV electrons, and the ensuing defects studied by EPR and electrical measurements. The presence of oxygen strongly affects the properties of... (Read more)Si| EPR electron-irradiation| Lithium RCA3 RCA4 n-type .inp files: Si/Li3 Si/Li4 | last update: Takahide Umeda
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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