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- 1. J. Appl. Phys. 100, 043706 (2006) , “Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC”, W. C. Mitchel, W. D. Mitchell, Z. Q. Fang, D. C. Look, S. R. Smith, H. E. Smith, Igor Khlebnikov, Y. I. Khlebnikov, C. Basceri, and C. BalkasTemperature dependent Hall effect (TDH), low temperature photoluminescence (LTPL), secondary ion mass spectrometry (SIMS), optical admittance spectroscopy (OAS), and thermally stimulated current (TSC) measurements have been made on 6H-SiC grown by the physical vapor transport technique... (Read more)
- 2. J. Vac. Sci. Technol. B 22, 120-125 (2004) , “Properties of Fe-doped semi-insulating GaN structures”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, S. J. PeartonThe properties of semi-insulating GaN films with the lower part of the film doped with Fe are reported. The 300 K sheet resistivity of the films was 2×1010 /square with an activation energy of the dark conductivity of 0.5 eV. The Fermi level is also pinned at... (Read more)
- 3. Physica B 340-342, 156 (2003) , “Electrical and multifrequency EPR study of nonstoichiometric defects in 4H-SiC”, E. N. Kalabukhova, S. N. Lukin, D. V. Savchenko and W. C. MitchelTwo paramagnetic intrinsic defects P and ND1 have been studied in both C-rich n-type 4H-SiC and undoped semi-insulating (s.i.) 4H-SiC in the dark and under illumination of the s.i. sample with light at 140 and 37 GHz in the temperature interval from 4.2 to 77 K. Photo EPR and Hall effect... (Read more)
- 4. Phys. Rev. B 65, 85312 (2002) , “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. MishraElectron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5×1018 to 5.0×1019 cm-3. The samples were also characterized by secondary-ion-mass... (Read more)
- 5. Appl. Phys. Lett. 66, 1364 (1995) , “Semi-insulating 6H–SiC grown by physical vapor transport”, H. McD. Hobgood, R. C. Glass, G. Augustine, R. H. Hopkins, J. Jenny, M. Skowronski, W. C. Mitchel, M. RothSemi-insulating 6HSiC crystals have been achieved by using controlled doping with deep-level vanadium impurities. High resistivity undoped and semi-insulating vanadium-doped single-crystals with diameters up to 50 mm were grown by physical vapor transport using an induction-heated, cold-wall... (Read more)
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Updated at 2010-07-20 16:50:39
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