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- 1. Semicond. Sci. Technol. 10, 977 (1995) , “EPR and ENDOR Observation of Orthorhombic Au-Li and Pt-Li Pairs in Silicon: on the Problem of the Observation of Isolated AuSi0 with Magnetic Resonance”, S. Greulich-Weber, P. Alteheld, J. Reinke, H. Weihrich, H. Overhof, J. M. Spaeth.We report the observation of orthorhombic Au-Li and Pt-Li pairs in Si using EPR and ENDOR techniques and also MCDA spectroscopy. The EPR spectra alone could be mistaken as being due to orthorhombic isolated point defects and ENDOR is required to detect the Li partner of the pair. Comparison of the... (Read more)
- 2. Phys. Rev. B 42, 5765 (1990) , “Bistable interstitial-carbonsubstitutional-carbon pair in silicon”, L. W. Song, X. D. Zhan, B. W. Benson, and G. D. WatkinsA bistable interstitial-carbon–substitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon ‘‘molecule’’... (Read more)
- 3. Phys. Rev. Lett. 60, 460 (1988) , “Bistable Defect in Silicon: The Interstitial-Carbon-Substitutional-Carbon Pair”, L. W. Song, X. D. Zhan, B. W. Benson, G. D. Watkins.By combining several spectroscopic techniques, we have observed a new type of bistable center in electron-irradiated silicon and have identified it as an interstitial-carbon–substitutional-carbon pair. The positive and negative charge states of the defect share a common stable configuration which... (Read more)
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Updated at 2010-07-20 16:50:39
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Materials
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Bond(35 tags)
Defect(interstitial)(18 tags)
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