« Previous
1
Next »
(5 hits, 1/1)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 1. Phys. Rev. B 75, 195208 (2007) , “Supercell and cluster density functional calculations of the thermal stability of the divacancy in germanium”, C. Janke, R. Jones, S. Öberg, and P. R. BriddonLarge vacancy clusters, or voids, formed during crystal growth have been reported in Ge. The divacancy is a precursor to such clusters, and is believed to be stable up to 150 or 180 °C. It is also believed to form in Ge irradiated at room temperature where single vacancies are mobile. Density... (Read more)
- 2. Phys. Rev. B 75, 144103 (2007) , “Multiscale modeling of point defects in Si-Ge(001) quantum wells”, B. Yang and V. K. TewaryA computationally efficient hybrid Green's function (GF) technique is developed for multiscale modeling of point defects in a trilayer lattice system that links seamlessly the length scales from lattice (subnanometers) to continuum (bulk). The model accounts for the discrete structure of the lattice... (Read more)
- 3. Phys. Rev. B 75, 115206 (2007) , “Local-density-functional calculations of the vacancy-oxygen center in Ge”, A. Carvalho, R. Jones, J. Coutinho, V. J. B. Torres, S. Öberg, J. M. Campanera Alsina, M. Shaw, and P. R. BriddonWe carry out a comprehensive density-functional study of the vacancy-oxygen (VO) center in germanium using large H-terminated Ge clusters. The importance of a nonlinear core correction to account for the involvement of the 3d electrons in Ge-O bonds is discussed. We calculate the electrical... (Read more)
- 4. Appl. Phys. Lett. 88, 091919 (2006) , “Calculation of deep carrier traps in a divacancy in germanium crystals”, J. Coutinho, V. J. B. Torres, R. Jones, A. Carvalho, S. berg, P. R. BriddonWe present an ab initio density functional study on the electronic structure and electrical properties of divacancies in Ge. Although suffering essentially different Jahn-Teller distortions when compared to the analogous defect in Si, the relative location of the electrical levels in the gap... (Read more)
- 5. Phys. Rev. B 73, 235213 (2006) , “Donor-vacancy complexes in Ge: Cluster and supercell calculations”, J. Coutinho, S. Öberg, V. J. B. Torres, M. Barroso, R. Jones, and P. R. BriddonWe present a comprehensive spin-density functional modeling study of the structural and electronic properties of donor-vacancy complexes (PV, AsV, SbV, and BiV) in Ge crystals. Special attention is paid to spurious results which are related to the choice of the boundary... (Read more)
« Previous
1
Next »
(5 hits, 1/1)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)