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- 1. J. Catalysis 5, 314-324 (1966) , “ESR investigation of gas-solid interactions* The oxygen-zinc oxide system”, K.M. SancierESR measurements were combined with determinations of the amount of oxygen adsorbed or desorbed on ZnO in order to investigate the relationship between the solid state electronic properties of a semiconductor catalyst and the amounts and the nature of the adsorbed oxygen species. (Read more)
- 2. J. Catalysis 9, 331-335 (1967) , “ESR evidence of CO oxidation by more than one oxygen species sorbed on ZnO”, Kenneth M. SancierAn approach is described for investigating the nature of sorbed oxygen species on a semiconductor catalyst surface and for determining their relative reactivities in a heterogeneous oxidation reaction. Experimental information as to the types of oxygen species on ZnO with presorbed oxygen, ZnO... (Read more)
- 3. Phys. Rev. 170, 705 (1968) , “Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of Silicon”, D. Haneman.EPR measurements have been made on aligned cleavage faces of Si, prepared and studied in high vacuum (<10-9 Torr). The signal, observable after accumulation, is a single line at g=2.0055 with width 6 G, similar to that from vacuum-crushed powders. It is unaffected by oxygen exposures... (Read more)
- 4. J. Catalysis 11, 317-325 (1968) , “ESR studies on ZnO---Cr2O3 catalysts”, M. R?lekW. Gunsser , A. KnappwostThe effects of the conditions of preparation of ZnO---Cr2O3 catalysts on their ESR spectra have been investigated by means of a Q-band spectrometer. The linewidths of oxides prepared by a low-temperature decomposition of the respective hydroxides in nitrogen flow are large and exhibit concentration... (Read more)
- 5. J. Catalysis 12, 278-280 (1968) , “An ESR investigation of nitrobenzene adsorbed on zinc oxide”, V. V. Subba Rao, R. D. Iyengar and A. C. ZettlemoyerAn ESR study of the interaction of nitrobenzene with nonstoichiometric ZnO surfaces was made. A 3-line spectrum with g values 1.9840, 2.0055 and 2.0225 was observed and was identified as due to nitrobenzene anion radicals strongly held to the surface. An unidentified signal at g = 2.0050 was left... (Read more)
- 6. Surf. Sci. 13, 251-262 (1969) , “ESR studies of the interaction of O2, NO2, N2O, NO and Cl2 with zinc oxide”, R. D. Iyengar, V. V. Subba Rao , A. C. ZettlemoyerAn electron spin resonance study of the surface interaction of zinc oxide with oxygen, oxides of nitrogen (NO2, NO and N2O) and chlorine was made. Characteristic spectra obtained following adsorption of NO2 and NO were analyzed and attributed to rigidly adsorbed neutral molecules. Confirmation of... (Read more)
- 7. J. Catalysis 16, 44-52 (1970) , “Electron spin resonance investigation of electrical conductivity parameters of zinc oxide during surface reactions”, Morio Setaka, Kenneth M. Sancier and Takao KwanThe effect of the electron transfer process between the bulk and surface of ZnO upon oxygen sorption was investigated by measuring the changes of the following ESR parameters: the spin densities of the g = 1.96 and g ~ 2.0 signals, the intensity of a Mn2+ reference sample, and the crystal current of... (Read more)
- 8. Surf. Sci. 27, 375-378 (1971) , “ESR evidence of surface Fermi level anchoring by surface additives on ZnO”, J. P. Bonnelle and M. Guelton
- 9. J. Vac. Sci. Technol. 9, 87-90 (1972) , “Properties of ZnO Films Prepared by dc and rf Diode Sputtering”, J. VuillodA brief description of the dc and rf diode sputtering unit is first presented. The study of properties of the films is reviewed taking into consideration two main parameters, oxygen partial pressure and substrate temperature. Reflection electron diffraction and x-ray diffraction studies show that... (Read more)
- 10. Advances in Molecular Relaxation Processes 5, 211-218 (1973) , “Chemisorption of oxygen on transition metal oxides studied by EPR”, Krystyna DyrekThe method was applied to the investigation of adsorption of oxygen on the transition metal oxides MnO, FeO, CoO, Cu2O, and their solid solutions in the diamagnetic matrices ZnO and MgO. It has been found that in the case of pure oxides and their solid solutions at high magnetic metal ion... (Read more)
- 11. J. Chem. Phys. 60, 2148-2151 (1974) , “Formation of O– in ZnO from the dissociation of adsorbed N2O”, Ning-Bew Wong, Younes Ben Taarit, and Jack H. LunsfordPhotoinduced O ions or V-type centers have been detected in ZnO following ultraviolet irradiation at 196°C. The EPR spectrum of the ions is characterized by g=2.021 and g = 2.0026. The concentration of O was greatly... (Read more)
- 12. J. Catalysis 35, 167-175 (1974) , “Studies of electron spin resonance spectra and activity of supported zinc oxide catalysts for hydrogenation of ethylene”, D. L. Harrison, A. J. Parker, Marjorie J. Sharp and H. SteinerThe activities and ESR spectra of zinc oxide catalysts for hydrogenation of ethylene at 150 °C have been studied. No catalytic activity was observed for silica- or alumina-supported ZnO at surface coverages below 2–3 nominal monolayers. The ESR signal at g = 1.958 from the zinc oxide was... (Read more)
- 13. J. Vac. Sci. Technol. 15, 1298-1310 (1978) , “Reactions of oxygen with ZnO–100-surfaces”, W. GöpelInvestigations are reported on the reaction of oxygen with electrostatic neutral ZnO100-surfaces studied by means of AES, LEED, EPR, thermal desorption spectroscopy, and isotopic exchange as well as changes in the surface conductivity and work function. Geometric and electronic structures of... (Read more)
- 14. Prog. Surf. Sci. 20, 9-103 (1985) , “Chemisorption and charge transfer at ionic semiconductor surfaces: Implications in designing gas sensors”, W. GopelA detailed atomistic understanding of charge transfer reactions between semiconductor surfaces and adsorbing particles is essential for designing gas sensors or metal-oxide catalysts.This will be demonstrated in a discussion of thermodynamically or kinetically controlled solid/gas interactions at... (Read more)
- 15. Phys. Rev. B 46, 12266-12277 (1992) , “Measurement of the effect of pretreatment and adsorption on the electrical properties of ZnO powders using a microwave-Hall-effect technique”, Byung-Ki Na, M. Albert Vannice, Arden B. WaltersMicrowave-Hall-effect (MHE) and electrical conductivity measurement techniques can now be used to obtain absolute values of the electrical properties of semiconductor powders under different controlled conditions. A commercial ESR spectrometer was modified to conduct MHE experiments and a network... (Read more)
- 16. Appl. Phys. Lett. 70, 1137 (1997) , “In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon”, Satoshi Yamasaki, Takahide Umeda, Junichi Isoya, and Kazunobu TanakaIn situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the... (Read more)
- 17. Mater. Lett. 33, 247-250 (1998) , “Electron spin resonance properties of ZnO microcrystallites”, Baolong Yu, Congshan Zhu, Fuxi Gan , Yabin HuangThe preparation of ZnO microcrystallites using a microemulsion method and their electron spin resonance (ESR) properties are reported for the first time. It was found that the ZnO microcrystallite exhibits an ESR signal at room temperature, in contrast to that of bulk ZnO. The results confirmed that... (Read more)
- 18. J. Non-Cryst. Solids 239, 16-48 (1998) , “Optically active oxygen-deficiency-related centers in amorphous silicon dioxide”, Linards SkujaThe spectroscopic properties, structure and interconversions of optically active oxygen-deficiency-related point defects in vitreous silica are reviewed. These defects, the E′-centers (oxygen vacancies with a trapped hole or 3-fold-coordinated silicons), different variants of diamagnetic... (Read more)GeO2 SiO2| EPR PL gamma-irradiation optical-spectroscopy| 0.5-1.0eV 1.0eV~ 1H 2.0eV~ 3.0eV~ 4.0eV~ 5.0eV~(larger) Chlorine E' E'-alpha E'-betha E'-delta E'-gamma Germanium H(I) H(II) Hydrogen ODC ODC(I) ODC(II) OHC Oxygen POR Silicon amorphous dangling-bond dielectric interstitial pair(=2) surface triplet vacancy | last update: Takahide Umeda
- 19. Appl. Surf. Sci. 147, 85-93 (1999) , “Influence of trivalent metal ions on the surface structure of a copper-based catalyst for methanol synthesis”, Hong-Bo Chen, Dai-Wei Liao, La-Jia Yu, Yi-Ji Lin, Jun Yi, Hong-Bin Zhang and Khi-Rui TsaiThe method of doping trivalent metal ions into a copper-based catalyst for methanol synthesis is effective in modifying the surface structure of the catalyst. The promotion effect and its relation to catalytic activity for hydrogenation of CO to methanol after doping with trivalent metal ions such... (Read more)
- 20. Appl. Catalysis A 178, 167-176 (1999) , “Reactivity for isomerization of 1-butene on the mixed MoO3–ZnO oxide catalyst”, Kentaro Nakamura, Kazuo Eda, Sadao Hasegawa , Noriyuki SotaniThe mixed MoO3–ZnO catalyst was expected to reveal the new function as a catalyst. The catalyst was characterized by XRD, ESR, XANES and so on. We found that the MoO3–ZnO catalyst was effective for isomerization and metathesis of 1-butene. The defects with the anion vacancy were formed... (Read more)
- 21. Phys. Rev. Lett. 85, 2324-2327 (2000) , “Fast Diffusion of H and Creation of Dangling Bonds in Hydrogenated Amorphous Silicon Studied by in situ ESR”, U. K. Das, T. Yasuda, and S. YamasakiThe interaction of atomic hydrogen with a-Si:H films was studied by means of in situ ESR during H plasma treatment. H diffuses into the a-Si:H film and creates additional Si dangling bonds (∼1013 cm -2). We observed a high diffusion coefficient (>10-10 cm... (Read more)
- 22. Phys. Rev. Lett. 86, 1054 (2001) , “Electron Spin Resonance Observation of the Si(111)- (7?7) Surface and Its Oxidation Process”, Takahide Umeda, Masayasu Nishizawa, Tetsuji Yasuda, Junichi Isoya, Satoshi Yamasaki, and Kazunobu TanakaElectron spin resonance (ESR) observation of dangling-bond states on the Si(111)- (7?7) surface is demonstrated for the first time. The ESR spectra clearly show that a reaction of molecular oxygen with the Si(111)- (7?7) surface is associated with the appearance of a new dangling-bond center at... (Read more)Si SiO2| EPR STM/AFM/SPM| Oxygen Pb Ps0 Ps1 Silicon dangling-bond interface surface .inp files: Si/surface(111) | last update: Masatoshi Sasaki
- 23. Appl. Surf. Sci. 180, 308-314 (2001) , “The surface properties and photocatalytic activities of ZnO ultrafine particles”, Liqiang Jing, Zili Xu, Xiaojun Sun, Jing Shang and Weimin CaiWe prepared ZnO ultrafine particles (UFPs) by thermal decomposition of the precursor zinc carbonate hydroxide. The surface properties of the as-prepared particles were studied using TEM, XRD, BET, SPS, EPR, IR, and XPS. The surface contains active species such as oxygen deficiencies and hydroxyl... (Read more)
- 24. Appl. Catalysis A 213, 173-177 (2001) , “In situ electron paramagnetic resonance (EPR) study of surface oxygen species on Au/ZnO catalyst for low-temperature carbon monoxide oxidation”, Zhengping Hao, Liangbo Fen, G. Q. Lu, Jianjun Liu, Lidun An and Hongli WangSome paramagnetic superoxide ions detectable by electron paramagnetic resonance (EPR) can be generated on Au/ZnO catalyst by oxygen adsorption at room temperature as well as at 553 K. In both the cases, the O2− ions are present on the catalyst surface. The disappearance of the O2−... (Read more)
- 25. Phys. Rev. Lett. 91, 136101 (2003) , “Ab initio Simulations of Homoepitaxial SiC Growth”, M. C. Righi, C. A. Pignedoli, R. Di Felice, C. M. Bertoni, A. CatellaniWe present first-principle calculations on the initial stages of SiC homoepitaxial growth on the SiC(111)(×) surface. We show that the nonstoichiometric reconstruction plays a relevant role in favoring the attainment of high-quality films. The motivation is twofold: On one hand, we... (Read more)
- 26. Phys. Rev. B 67, 195338 (2003) , “Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method”, T. Yasuda, N. Kumagai, M. Nishizawa, S. Yamasaki, H. Oheda, and K. YamabeDry oxidation kinetics of the Si(001) surface has been investigated using reflectance difference oscillation to resolve atomic-scale phenomena. The activation energy for oxidation has been found to increase as the oxide-Si interface moves in the depth direction, reaching the value for bulk... (Read more)
- 27. Phys. Rev. Lett. 92, 105505 (2004) , “In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth on Si(111)”, W. Futako, N. Mizuochi, and S. YamasakiWe report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center... (Read more)
- 28. J. Appl. Phys. 95, 490 (2004) , “Surface-state origin for the blueshifted emission in anodically etched porous silicon carbide”, Tilghman L. Rittenhouse, Paul W. Bohn, Tim K. Hossain, Ilesanmi Adesida, James Lindesay, Alfred MarcusAnodic etching of SiC yields a highly monodisperse distribution of nanometer dimension porous structures which extend to a significant depth. Cathodoluminescence (CL) studies of the porous layers yield luminescence peaks in the UV region, above the band gap energy of bulk SiC. Higher etching current... (Read more)
- 29. Appl. Phys. Lett. 85, 926 (2004) , “Atomic cracks and (2×2×)-R30° reconstruction at 6H-SiC(0001) surface”, E. Amy, P. Soukiassian, C. BrylinskiWe investigate the Si-rich 3×3 to Si-terminated × phase transition of the 6H-SiC(0001) surface by atom-resolved scanning tunneling microscopy. We find a 2×2-R30° reconstruction, coexisting with few 3×3 domains. While a high-quality 3×3 surface preparation is... (Read more)
- 30. Appl. Phys. Lett. 87, 241906 (2005) , “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H–SiC homoepitaxially grown film”, Takuro Tomita, Shigeki Matsuo, Tatsuya Okada, Tsunenobu Kimoto, Hiroyuki Matsunami, Takeshi Mitani, Shin-Ichi NakashimaThe structures of comet defects in a 4HSiC homoepitaxially grown film are investigated by deep-ultraviolet micro-Raman spectroscopy. Spatial distribution of the 4H- and 3CSiC is clearly distinguished both from the intensities of the folded longitudinal acoustic phonon mode and the peak... (Read more)
- 31. Phys. Rev. Lett. 97, 016102 (2006) , “Scaling and Universality of Roughening in Thermal Oxidation of Si(001)”, Hiroo Omi, Hiroyuki Kageshima, and Masashi UematsuBy analyzing atomic force microscopy images, we derive a continuum equation that quantitatively explains the roughening at the Si(001)-SiO2 interface during thermal oxidation at the temperature at 1200 °C in an Ar atmosphere containing a small fraction of O2. We also show... (Read more)
- 32. Phys. Rev. Lett. 97, 166803 (2006) , “Electronic Structure of Defect States in Hydroxylated and Reduced Rutile TiO2(110) Surfaces”, Cristiana Di Valentin, Gianfranco Pacchioni, and Annabella SelloniIt has been experimentally observed that a bridging oxygen vacancy on the rutile TiO2(110) surface introduces localized Ti3+ 3d1 states about 1 eV below the conduction band which are not removed upon dissociation of a water molecule and formation of a pair of... (Read more)
- 33. Phys. Rev. Lett. 97, 226401 (2006) , “Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110)”, Magnus Hedström, Arno Schindlmayr, Günther Schwarz, and Matthias SchefflerWe propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle corrections to the Kohn-Sham eigenvalues of density-functional theory. Its applicability is demonstrated for anion vacancies at... (Read more)
- 34. Phys. Rev. B 73, 073302 (2006) , “Origin of Pb1 center at SiO2/Si(100) interface: First-principles calculations”, K. Kato, T. Yamasaki, T. UdaBased on first-principles calculations, we studied the generation behavior of Pb centers at SiO2/Si interfaces, especially for Pb1 centers, under oxidation of Si(100) surfaces. Pb1 centers were found to be formed... (Read more)
- 35. Phys. Rev. B 74, 033304 (2006) , “5-7-5 line defects on As/Si(100): A general stress-relief mechanism for V/IV surfaces”, W. E. McMahon, Iskander G. Batyrev, T. Hannappel, J. M. Olson, and S. B. ZhangAn entire family of nano-scale trenches, ridges, and steps has been observed experimentally on AsH3-exposed Si(100). Some of these line structures have been observed previously, but their structures have remained a mystery. Theoretical modeling shows that they are all based upon the same... (Read more)
- 36. Phys. Rev. B 74, 075332 (2006) , “Point defects on the (110) surfaces of InP, InAs, and InSb: A comparison with bulk”, A. Höglund, C. W. M. Castleton, M. Göthelid, B. Johansson,, and S. MirbtThe basic properties of point defects, such as local geometries, positions of charge-transfer levels, and formation energies, have been calculated using density-functional theory, both in the bulk and on the (110) surface of InP, InAs, and InSb. Based on these results we discuss the electronic... (Read more)
- 37. Phys. Rev. B 74, 113301 (2006) , “Reactions of excess hydrogen at a Si(111) surface with H termination: First-principles calculations”, L. Tsetseris, S. T. PantelidesHydrogen reactions with silicon substrates is an established technique for the study and control of surface morphology. Here, we report the results of first-principles calculations on the trapping and depassivation reactions involving excess hydrogen (x-H) at a fully H-passivated Si(111) surface. We find that x-H atoms can depassivate Si-H bonds with a small barrier of 0.8 eV, or they can get trapped in very stable configurations that comprise of a dihydride and a vicinal Si-H bond. Desorption of H2 molecules from these complexes has an activation energy of 1.68 eV, which can account for pertinent experimental data. We discuss also the effect of strain on the possibility of altering the x-H surface profile. (Read more)
- 38. Phys. Rev. B 74, 153311 (2006) , “Electron transport in laterally confined phosphorus δ layers in silicon”, S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, and T.-C. ShenTwo-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. The electronic transport of such quasi-one-dimensional systems with and without a perpendicular magnetic field was characterized at cryogenic... (Read more)
- 39. Phys. Rev. B 74, 165404 (2006) , “Density functional study of gold atoms and clusters on a graphite (0001) surface with defects”, Jaakko Akola and Hannu HäkkinenAdsorption of gold atoms and clusters (N=6) on a graphite (0001) surface with defects has been studied using density functional theory. In addition to perfect graphite (0001), three types of surface defects have been considered: a surface vacancy (hole), a pyridinelike defect comprising three... (Read more)
- 40. Phys. Rev. B 74, 193405 (2006) , “Role of charge in destabilizing AlH4 and BH4 complex anions for hydrogen storage applications: Ab initio density functional calculations”, A. J. Du, Sean C. Smith, and G. Q. LuNaAlH4 and LiBH4 are potential candidate materials for mobile hydrogen storage applications, yet they have the drawback of being highly stable and desorbing hydrogen only at elevated temperatures. In this letter, ab initio density functional theory calculations reveal... (Read more)
- 41. Phys. Rev. B 74, 205324 (2006) , “Surface smoothness of plasma-deposited amorphous silicon thin films: Surface diffusion of radical precursors and mechanism of Si incorporation”, Mayur S. Valipa, Tamas Bakos, and Dimitrios MaroudasWe present a detailed analysis of the fundamental atomic-scale processes that determine the surface smoothness of hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of molecular-dynamics (MD) simulations of radical precursor migration on surfaces... (Read more)
- 42. Phys. Rev. B 74, 235301 (2006) , “Precursor mechanism for interaction of bulk interstitial atoms with Si(100)”, Xiao Zhang, Min Yu, Charlotte T. M. Kwok, Ramakrishnan Vaidyanathan, Richard D. Braatz, and Edmund G. SeebauerIn the same way that gases react with surfaces from above, solid-state point defects such as interstitial atoms can react from below. Little attention has been paid to this form of surface chemistry. Recent bulk self-diffusion measurements near the Si(100) surface have quantified Si interstitial... (Read more)
- 43. Phys. Rev. B 74, 235426 (2006) , “First-principles study of electronic properties of hydrogenated graphite”, A. Allouche and Y. FerroProgressive implantation of hydrogen atoms into graphite is modeled by first-principles density functional theory. The maximum H/C ratio was found at 53%, which is in good agreement with experimental results. The hydrogen trapping energy varies from −0.7 eV at very low concentrations to a... (Read more)
- 44. Phys. Rev. B 74, 245411 (2006) , “Vacancy defects and the formation of local haeckelite structures in graphene from tight-binding molecular dynamics”, Gun-Do Lee, C. Z. Wang, Euijoon Yoon, Nong-Moon Hwang, and K. M. HoThe dynamics of multivacancy defects in a graphene layer is investigated by tight-binding molecular dynamics simulations and by first principles calculation. The simulations show that four single vacancies in the graphene layer first coalesce into two double vacancies, each consisting of a... (Read more)
- 45. Nature 442, 436 (2006) , “Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions”, D. Kitchen, A. Richardella, J. -M. Tang, M. E. Flatt, A. YazdaniThe discovery of ferromagnetism in Mn-doped GaAs1 has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices2, 3, 4. A major hurdle for realistic applications of Ga1-XMnXAs, or other dilute magnetic semiconductors, remains that their ferromagnetic transition temperature is below room temperature. Enhancing ferromagnetism in semiconductors requires us to understand the mechanisms for interaction between magnetic dopants, such as Mn, and identify the circumstances in which ferromagnetic interactions are maximized5. Here we describe an atom-by-atom substitution technique using a scanning tunnelling microscope (STM) and apply it to perform a controlled study at the atomic scale of the interactions between isolated Mn acceptors, which are mediated by holes in GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn–Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-XMnXAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. (Read more)
- 46. J. Appl. Phys. 99, 023523 (2006) , “Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy”, G. Brauer, W. Anwand, W. Skorupa, S. Brandstetter, and C. TeichertSystematic slow positron implantation spectroscopy (SPIS) and atomic force microscopy studies of various 6H-SiC samples are presented to clarify the role of conductivity type, crystal quality, ion implantation (B+,Al+, and N+), and annealing (1.650 °C) in... (Read more)
- 47. J. Appl. Phys. 99, 113520 (2006) , “Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment”, A. V. Vasin, S. P. Kolesnik, A. A. Konchits, V. I. Kushnirenko, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, and S. AshokHydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. An integrated investigation of the effect of vacuum annealing temperature on photoluminescence properties and paramagnetic defects and its correlation with structural... (Read more)
- 48. Appl. Phys. Lett. 89, 041916 (2006) , “Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process”, Dong Wang, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, and Masahiko NakamaeCrystal qualities of Si/SiGe/Si-on-insulator structures with different SiGe thicknesses were evaluated by photoluminescence (PL). The wafers were annealed at different temperatures with a ramping rate of 5 °C/min. Free exciton PL peaks were clearly observed for the as-grown wafers and decreased... (Read more)
- 49. Appl. Phys. Lett. 89, 222101 (2006) , “Reversible creation and annihilation of a local leakage path in HfO2/GeOx stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy”, K. Yamamura, K. Kita, A. Toriumi, and K. KyunoBy direct observation using ultrahigh vacuum conducting atomic force microscopy, it is found that a local leakage path in HfO2/GeOx stacks created by an electrical stress with a positive tip bias annihilates after applying a reverse tip bias. The creation and... (Read more)
- 50. Appl. Phys. Lett. 89, 231901 (2006) , “Cathodoluminescence investigations of GaInNAs on GaAs(111)B”, J. Miguel-Sánchez, U. Jahn, A. Guzmán, and E. MuñozIn this work, we present a detailed cathodoluminescence characterization of GaInNAs quantum wells grown on GaAs(111)B. As-grown and annealed InGaAs and GaInNAs quantum wells were maeasured and compared by spatially resolved cathodoluminescence at different photon energies. In the case of... (Read more)
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