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- 1. Phys. Rev. Lett. 97, 176404 (2006) , “Stark Tuning of Donor Electron Spins in Silicon”, F. R. Bradbury, A. M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, and S. A. LyonWe report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the... (Read more)
- 2. Phys. Rev. Lett. 92, 47602 (2004) , “Overhauser Effect of 67Zn Nuclear Spins in ZnO via Cross Relaxation Induced by the Zero-Point Fluctuations of the Phonon Field”, Hubert Blok, Serguei B. Orlinski, Jan Schmidt, Pavel G. BaranovHole burning in and displacements of the magnetic-resonance absorption line of the electron spin of the shallow hydrogen-related donor in ZnO are observed upon resonant irradiation with microwaves at 275 GHz and at 4.5 K in a magnetic field of 10 T. These effects arise from an almost complete... (Read more)
- 3. Physica B 340-342, 903-907 (2003) , “Pulsed EPR studies of shallow donor impurities in SiC”, J. Isoya, T. Ohshima, N. Morishita, T. Kamiya, H. Itoh, S. YamasakiSpin-lattice relaxation time (T1) and phase memory time (TM) of shallow donors in 3C-, 4H- and 6H-SiC have been measured in time domain by using pulsed EPR technique. The temperature dependence of T1 suggests that the Orbach process should be frozen at relatively high temperatures. Shallow donors in SiC are promising in attaining a sufficiently long phase memory time at temperatures much higher than Si:P. (Read more)
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Updated at 2010-07-20 16:50:39
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