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- 1. Phys. Rev. B 75, 033301 (2007) , “Microscopic evidence for evolution of superconductivity by effective carrier doping in boron-doped diamond: 11B-NMR study”, H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi, T. Oguchi, and H. KawaradaWe have investigated the superconductivity discovered in boron-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower... (Read more)
- 2. Phys. Rev. B 65, 85312 (2002) , “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. MishraElectron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5?1018 to 5.0?1019 cm-3. The samples were also characterized by secondary-ion-mass... (Read more)
- 3. Phys. Rev. Lett. 73, 3419 (1994) , “Non-Arrhenius Reorientation Kinetics for the B-H Complex in Si: Evidence for Thermally Assisted Tunneling”, Y. Michael Cheng and Michael StavolaThe B-H complex in Si can be aligned by stress and reorients with an activation energy of roughly 0.2 eV. We combine new measurements of the reorientation kinetics of the B-H complex made by the stress-induced dichroism technique with previous internal friction results to show that the reorientation... (Read more)
- 4. Phys. Rev. B 44, 11486-11489 (1991) , “Reorientation of the B-H complex in silicon by anelastic relaxation experiments”, G. Cannelli, R. Cantelli, M. Capizzi, C. Coluzza, F. Cordero, A. Frova, A. Lo PrestiThe elastic energy loss between 60 and 300 K was measured in SiBxHy at frequencies between 2.4 and 32 kHz. A single-time relaxation process appears in the neighborhood of 130 K, which is due to the stress-induced jumps of H around B, with a relaxation time... (Read more)
- 5. Phys. Rev. Lett. 61, 2786 (1988) , “Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Silicon”, Michael Stavola, K. Bergman, S. J. Pearton, and J. LopataThe motion of hydrogen in the B-H complex in silicon has been studied. An applied stress is used to produce a preferential alignment of the B-H complex at temperatures sufficiently high for the H to move within the complex (above ∼60 K). This alignment of the complexes is detected by comparing the... (Read more)
- 6. Phys. Rev. B 31, 5525-5528 (1985) , “Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon”, N. M. JohnsonExperimental results are presented which identify the following chemical reaction as being responsible for compensation of shallow-acceptor impurities when single-crystal silicon is exposed to monatomic hydrogen: A-+h++H0↔(AH)0, where A-... (Read more)
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Updated at 2010-07-20 16:50:39
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