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- 1. Phys. Rev. B 75, 085416 (2007) , “Ab initio theoretical study of hydrogen and its interaction with boron acceptors and nitrogen donors in single-wall silicon carbide nanotubes”, A. GaliSilicon carbide nanotubes have a great potential for biological applications. It is of interest to explore the electronic properties of these nanotubes, and how those are modified in the presence of impurities. Hydrogen is a common impurity that can appear during the growth of silicon carbide... (Read more)
- 2. Appl. Phys. Lett. 89, 182115 (2006) , “Electrically detected magnetic resonance in ion-implanted Si:P nanostructures”, D. R. McCamey, H. Huebl, M. S. Brandt, W. D. Hutchison, J. C. McCallum, R. G. Clark, and A. R. HamiltonThe authors present the results of electrically detected magnetic resonance (EDMR) experiments on ion-implanted Si:P nanostructures at 5 K, consisting of high-dose implanted metallic leads with a square gap, in which phosphorus is implanted at a nonmetallic dose corresponding to 1017 ... (Read more)
- 3. J. Appl. Phys. 100, 034309 (2006) , “Critical size for defects in nanostructured materials”, Jagdish NarayanThis paper addresses some of the fundamental issues and critical advantages in reducing the grain size/feature size to the nanoscale regime. We find that as the grain size or feature size is reduced, there is a critical size below which the defect content can be reduced virtually to zero. This... (Read more)
- 4. Phys. Rev. B 74, 153311 (2006) , “Electron transport in laterally confined phosphorus δ layers in silicon”, S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, and T.-C. ShenTwo-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. The electronic transport of such quasi-one-dimensional systems with and without a perpendicular magnetic field was characterized at cryogenic... (Read more)
- 5. Phys. Rev. B 74, 035202 (2006) , “Computation of the Stark effect in P impurity states in silicon”, A. Debernardi, A. Baldereschi, and M. FanciulliWe compute within the effective-mass theory and without adjustable parameters the Stark effect for shallow P donors in Si with anisotropic band structure. Valley-orbit coupling is taken into account in a nonperturbative way and scattering effects of the impurity core are included to properly... (Read more)
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Updated at 2010-07-20 16:50:39
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