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- 1. J. Appl. Phys. 100, 023704 (2006) , “Transformation behavior of room-temperature-stable metastable defects in hydrogen-implanted n-type silicon studied by isothermal deep-level transient spectroscopy”, Yutaka TokudaIsothermal deep-level transient spectroscopy (DLTS) with a single pulse has been used to study the transformation behavior of hydrogen-related metastable defects labeled EM1 (Ec0.28 eV) and EM2 (Ec0.37 eV), which are observed in... (Read more)
- 2. Phys. Rev. B 74, 033309 (2006) , “Effect of the triplet state on the random telegraph signal in Si n-MOSFETs”, Enrico Prati, Marco Fanciulli, Giorgio Ferrari, and Marco SampietroWe report on the static magnetic field dependence of the random telegraph signal in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and low temperatures, we find that the characteristic time ratio changes by three orders of magnitude... (Read more)
- 3. Phys. Rev. Lett. 96, 145501 (2006) , “Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC”, T. Umeda, N. T. Son, J. Isoya, E. Janzn, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. BockstedteThe metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC. (Read more)SiC| ENDOR EPR Theory electron-irradiation optical-spectroscopy thermal-meas./anneal-exp.| -1 -2 1.0eV~ 13C 29Si C1h C3v Carbon Csi EI5/6 HEI1 HEI5/6 Nitrogen P6/7 SI5 Silicon Vc antisite bistable/metastable dangling-bond n-type pair(=2) semi-insulating vacancy .inp files: SiC/SI5_C1h SiC/SI5_80K SiC/SI5_100K | last update: Takashi Fukushima
- 4. Appl. Phys. Lett. 84, 1704 (2004) , “Bistable defect in mega-electron-volt proton implanted 4H silicon carbide”, D. M. Martin, H. Kortegaard Nielsen, P. Lévêque, A. Hallén, G. Alfieri, B. G. SvenssonEpitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1×1012 cm2 creates an estimated initial concentration of... (Read more)
- 5. Physica B 340-342, 743 (2003) , “Annealing study of a bistable defect in proton-implanted n-type 4H-SiC”, H. Kortegaard Nielsen, D. M. Martin, P. Lévêque, A. Hallén and B. G. SvenssonThe thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-centre, has been studied using n-type epitaxially grown 4H-SiC layers implanted with 2.5 MeV protons to a... (Read more)
- 6. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 7. Phys. Rev. B 42, 5765 (1990) , “Bistable interstitial-carbonsubstitutional-carbon pair in silicon”, L. W. Song, X. D. Zhan, B. W. Benson, and G. D. WatkinsA bistable interstitial-carbon–substitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon ‘‘molecule’’... (Read more)
- 8. Phys. Rev. Lett. 60, 460 (1988) , “Bistable Defect in Silicon: The Interstitial-Carbon-Substitutional-Carbon Pair”, L. W. Song, X. D. Zhan, B. W. Benson, G. D. Watkins.By combining several spectroscopic techniques, we have observed a new type of bistable center in electron-irradiated silicon and have identified it as an interstitial-carbon–substitutional-carbon pair. The positive and negative charge states of the defect share a common stable configuration which... (Read more)
- 9. Phys. Rev. B 7, 2630 (1973) , “A Comparative Electron-Spin-Resonance Study of the Ground State and a Photoconverted Metastable State of the Mg+ Donor in Silicon”, J. E. Baxter, G. Ascarelli.Magnesium diffused into silicon forms a deep-double-donor state. Depending on the compensation, the distinct valence states Mg0, Mg+, or Mg++ are possible. EPR measurements have been performed at 55 GHz on the paramagnetic valence state Mg+ at... (Read more)
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Updated at 2010-07-20 16:50:39
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