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- 1. Phys. Rev. B 32, 6571 (1985) , “Electrical Properties of Dislocations and Point Defects in Plastically Deformed Silicon”, P. Omling, E. R. Weber, L. Montelius, H. Alexander, J. Michel.Energy levels of defect states introduced by plastic deformation of n-type silicon have been studied by capacitance transient spectroscopy. From the observed properties of the defects, it is concluded that two different types of defects are produced. The first type is interpreted as point defects... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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