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- 1. J. Appl. Phys. 89, 4625-4630 (2001) , “Hexagonal voids and the formation of micropipes during SiC sublimation growth”, Thomas A. Kuhr, Edward K. Sanchez, Marek Skowronski, William M. Vetter, Michael DudleyHexagonal voids observed in sublimation grown SiC boules were examined using optical microscopy, atomic force microscopy (AFM), scanning electron microscopy, KOH etching, and synchrotron white-beam x-ray topography. Voids formed at imperfections in the attachment layer between the seed and crucible... (Read more)
- 2. Nature 430, 1009 (2004) , “Ultrahigh-quality silicon carbide single crystals”, Daisuke Nakamura, Itaru Gunjishima, Satoshi Yamaguchi, Tadashi Ito, Atsuto Okamoto, Hiroyuki Kondo, Shoichi Onda, Kazumasa TakatoriSilicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices1,2. Careful consideration of the thermal conditions3-6 in which SiC {0001} is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes)7-9, inclusions, small-angle boundaries and longrange lattice warp has been reduced10,11. But some macroscopic defects (about 1–10 cm-2) and a large density of elementary dislocations (,104 cm-2), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (refs 12–16). Here we report a method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth)17, to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free. These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems. (Read more)
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Updated at 2010-07-20 16:50:39
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