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- 1. Phys. Rev. B 74, 035205 (2006) , “Mechanisms of arsenic clustering in silicon”, F. F. Komarov, O. I. Velichko, V. A. Dobrushkin, and A. M. MironovA model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms... (Read more)
- 2. Phys. Rev. Lett. 93, 255502 (2004) , “Formation of Thermal Vacancies in Highly As and P Doped Si”, V. Ranki and K. SaarinenUsing positron annihilation measurements we observed the formation of thermal vacancies in highly As and P doped Si. The vacancies start to form at temperatures as low as 650 K and are mainly undecorated at high temperatures. Upon cooling the vacancies form stable vacancy-impurity complexes such as... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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Materials
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Details
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Bond(35 tags)
Defect(interstitial)(18 tags)
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