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- 1. J. Appl. Phys. 99, 113520 (2006) , “Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment”, A. V. Vasin, S. P. Kolesnik, A. A. Konchits, V. I. Kushnirenko, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, and S. AshokHydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. An integrated investigation of the effect of vacuum annealing temperature on photoluminescence properties and paramagnetic defects and its correlation with structural... (Read more)
- 2. Phys. Rev. B 74, 205324 (2006) , “Surface smoothness of plasma-deposited amorphous silicon thin films: Surface diffusion of radical precursors and mechanism of Si incorporation”, Mayur S. Valipa, Tamas Bakos, and Dimitrios MaroudasWe present a detailed analysis of the fundamental atomic-scale processes that determine the surface smoothness of hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of molecular-dynamics (MD) simulations of radical precursor migration on surfaces... (Read more)
- 3. Phys. Rev. Lett. 97, 016102 (2006) , “Scaling and Universality of Roughening in Thermal Oxidation of Si(001)”, Hiroo Omi, Hiroyuki Kageshima, and Masashi UematsuBy analyzing atomic force microscopy images, we derive a continuum equation that quantitatively explains the roughening at the Si(001)-SiO2 interface during thermal oxidation at the temperature at 1200 °C in an Ar atmosphere containing a small fraction of O2. We also show... (Read more)
- 4. Appl. Catalysis A 213, 173-177 (2001) , “In situ electron paramagnetic resonance (EPR) study of surface oxygen species on Au/ZnO catalyst for low-temperature carbon monoxide oxidation”, Zhengping Hao, Liangbo Fen, G. Q. Lu, Jianjun Liu, Lidun An and Hongli WangSome paramagnetic superoxide ions detectable by electron paramagnetic resonance (EPR) can be generated on Au/ZnO catalyst by oxygen adsorption at room temperature as well as at 553 K. In both the cases, the O2− ions are present on the catalyst surface. The disappearance of the O2−... (Read more)
- 5. Appl. Surf. Sci. 180, 308-314 (2001) , “The surface properties and photocatalytic activities of ZnO ultrafine particles”, Liqiang Jing, Zili Xu, Xiaojun Sun, Jing Shang and Weimin CaiWe prepared ZnO ultrafine particles (UFPs) by thermal decomposition of the precursor zinc carbonate hydroxide. The surface properties of the as-prepared particles were studied using TEM, XRD, BET, SPS, EPR, IR, and XPS. The surface contains active species such as oxygen deficiencies and hydroxyl... (Read more)
- 6. Phys. Rev. Lett. 85, 2324-2327 (2000) , “Fast Diffusion of H and Creation of Dangling Bonds in Hydrogenated Amorphous Silicon Studied by in situ ESR”, U. K. Das, T. Yasuda, and S. YamasakiThe interaction of atomic hydrogen with a-Si:H films was studied by means of in situ ESR during H plasma treatment. H diffuses into the a-Si:H film and creates additional Si dangling bonds (∼1013 cm -2). We observed a high diffusion coefficient (>10-10 cm... (Read more)
- 7. Appl. Catalysis A 178, 167-176 (1999) , “Reactivity for isomerization of 1-butene on the mixed MoO3–ZnO oxide catalyst”, Kentaro Nakamura, Kazuo Eda, Sadao Hasegawa , Noriyuki SotaniThe mixed MoO3–ZnO catalyst was expected to reveal the new function as a catalyst. The catalyst was characterized by XRD, ESR, XANES and so on. We found that the MoO3–ZnO catalyst was effective for isomerization and metathesis of 1-butene. The defects with the anion vacancy were formed... (Read more)
- 8. Appl. Surf. Sci. 147, 85-93 (1999) , “Influence of trivalent metal ions on the surface structure of a copper-based catalyst for methanol synthesis”, Hong-Bo Chen, Dai-Wei Liao, La-Jia Yu, Yi-Ji Lin, Jun Yi, Hong-Bin Zhang and Khi-Rui TsaiThe method of doping trivalent metal ions into a copper-based catalyst for methanol synthesis is effective in modifying the surface structure of the catalyst. The promotion effect and its relation to catalytic activity for hydrogenation of CO to methanol after doping with trivalent metal ions such... (Read more)
- 9. J. Non-Cryst. Solids 239, 16-48 (1998) , “Optically active oxygen-deficiency-related centers in amorphous silicon dioxide”, Linards SkujaThe spectroscopic properties, structure and interconversions of optically active oxygen-deficiency-related point defects in vitreous silica are reviewed. These defects, the E′-centers (oxygen vacancies with a trapped hole or 3-fold-coordinated silicons), different variants of diamagnetic... (Read more)GeO2 SiO2| EPR PL gamma-irradiation optical-spectroscopy| 0.5-1.0eV 1.0eV~ 1H 2.0eV~ 3.0eV~ 4.0eV~ 5.0eV~(larger) Chlorine E' E'-alpha E'-betha E'-delta E'-gamma Germanium H(I) H(II) Hydrogen ODC ODC(I) ODC(II) OHC Oxygen POR Silicon amorphous dangling-bond dielectric interstitial pair(=2) surface triplet vacancy | last update: Takahide Umeda
- 10. Appl. Phys. Lett. 70, 1137 (1997) , “In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon”, Satoshi Yamasaki, Takahide Umeda, Junichi Isoya, and Kazunobu TanakaIn situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the... (Read more)
- 11. Phys. Rev. B 46, 12266-12277 (1992) , “Measurement of the effect of pretreatment and adsorption on the electrical properties of ZnO powders using a microwave-Hall-effect technique”, Byung-Ki Na, M. Albert Vannice, Arden B. WaltersMicrowave-Hall-effect (MHE) and electrical conductivity measurement techniques can now be used to obtain absolute values of the electrical properties of semiconductor powders under different controlled conditions. A commercial ESR spectrometer was modified to conduct MHE experiments and a network... (Read more)
- 12. J. Chem. Phys. 60, 2148-2151 (1974) , “Formation of O– in ZnO from the dissociation of adsorbed N2O”, Ning-Bew Wong, Younes Ben Taarit, and Jack H. LunsfordPhotoinduced O ions or V-type centers have been detected in ZnO following ultraviolet irradiation at 196°C. The EPR spectrum of the ions is characterized by g=2.021 and g = 2.0026. The concentration of O was greatly... (Read more)
- 13. Phys. Rev. 170, 705 (1968) , “Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of Silicon”, D. Haneman.EPR measurements have been made on aligned cleavage faces of Si, prepared and studied in high vacuum (<10-9 Torr). The signal, observable after accumulation, is a single line at g=2.0055 with width 6 G, similar to that from vacuum-crushed powders. It is unaffected by oxygen exposures... (Read more)
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