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- 1. J. Appl. Phys. 100, 034309 (2006) , “Critical size for defects in nanostructured materials”, Jagdish NarayanThis paper addresses some of the fundamental issues and critical advantages in reducing the grain size/feature size to the nanoscale regime. We find that as the grain size or feature size is reduced, there is a critical size below which the defect content can be reduced virtually to zero. This... (Read more)
- 2. J. Appl. Phys. 99, 063513 (2006) , “Superscrew dislocations in silicon carbide: Dissociation, aggregation, and formation”, Xianyun MaAn approach to precisely determine the magnitude and the sign of Burgers vectors of superscrew dislocations (including elementary screw dislocations and micropipes) in silicon carbide (SiC) single crystals has been developed. The histogram of Burgers vector values associated with micropipes follows... (Read more)
- 3. Appl. Phys. Lett. 87, 221903 (2005) , “Oxygen segregation to dislocations in GaN”, M. E. Hawkridge and D. ChernsThe structure and composition of threading dislocations in GaN grown by hydride vapor phase epitaxy have been examined by electron microscopy. Transmission electron microscopy showed that the core structure of screw dislocations varied widely, alternating irregularly between open core... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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