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- 1. Appl. Phys. Express 3, 051002 (2010) , “Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related electron trap, at around 0.3 eV from the conduction band minimum of n-type GaAsN grown by chemical beam epitaxy, is confirmed using deep level transient spectroscopy and nitrogen concentration dependence of its density. It has a high capture cross section and not observed in N... (Read more)
- 2. Appl. Phys. Express 3, 031103 (2010) , “High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates”, Seunghwan Park, Tsutomu Minegishi, Dongcheol Oh, Hyunjae Lee, Toshinori Taishi, Jinsub Park, Mina Jung, Jiho Chang, Inho Im, Junseok Ha, Soonku Hong, Ichiro Yonenaga, Toyohiro Chikyow, and Takafumi YaoThis article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4×1016 cm-3, while ZnO:N shows n-type... (Read more)
- 3. Jpn. J. Appl. Phys. 49, 071302 (2010) , “Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper”, Minoru Nakamura and Susumu MurakamiWe have observed the formation of the Cu centers in p-type Si crystals diffused with dilute Cu between 400 and 1000 °C by deep-level transient spectroscopy (DLTS) and photoluminescence methods. For the samples diffused below 800 °C, a DLTS Cu center denoted as the CuDLB center was... (Read more)
- 4. Jpn. J. Appl. Phys. 49, 05FE02 (2010) , “Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers”, Kiyoteru Kobayashi and Taketoshi IdeThe current conduction in silicon carbon nitride (SiCN) dielectric films subjected to ultraviolet (UV) illumination at room temperature has been investigated. After exposure of SiCN single-layer and SiCN–SiO2 double-layer films to 4.9-eV UV illumination, leakage currents through... (Read more)
- 5. Jpn. J. Appl. Phys. 49, 051001 (2010) , “Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related deep electron trap, at approximately 0.33 eV below the conduction band minimum of GaAsN grown by chemical beam epitaxy, is confirmed to act as a recombination center. The level is found to be responsible for the reverse bias current in the depletion region of n-type GaAsN schottky... (Read more)
- 6. Appl. Phys. Express 2, 091101 (2009) , “Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment”, Toru Hiyoshi and Tsunenobu KimotoBy thermal oxidation of 4H-SiC at 1150–1300 °C, the Z1/2 and EH6/7 concentrations can be reduced to below 1×1011 cm-3. By the oxidation, however, a high concentration of HK0 center (EV + 0.78 eV) is generated.... (Read more)
- 7. Appl. Phys. Express 2, 041101 (2009) , “Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation”, Toru Hiyoshi and Tsunenobu KimotoSignificant reduction of major deep levels in n-type 4H-SiC(0001) epilayers by means of thermal oxidation is demonstrated. By thermal oxidation of epilayers at 1150–1300 °C, the concentration of the Z1/2 and EH6/7 centers has been reduced from... (Read more)
- 8. Appl. Phys. Lett. 94, 092105 (2009) , “Interaction of oxygen with thermally induced vacancies in Czochralski silicon”, V. Akhmetov, G. Kissinger, and W. von AmmonComplexes consisting of a vacancy and four oxygen atoms, VO4, were found in oxygen-rich Czochralski silicon wafers subjected to rapid thermal annealing (RTA) at 1250 °C for 30 s in Ar/O2 atmosphere by means of Fourier transform infrared spectroscopy with enhanced... (Read more)
- 9. Appl. Phys. Lett. 94, 091903 (2009) , “Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys”, M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. JiangDeep ultraviolet photoluminescence spectroscopy was employed to study the impurity transitions in Mg-doped AlGaN alloys. A group of deep level impurity transitions was observed in Mg-doped AlxGa1−xN alloys, which was identified to have the same origin as the... (Read more)
- 10. Appl. Phys. Lett. 94, 061910 (2009) , “Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy”, M. J. Wang, L. Yuan, C. C. Cheng, C. D. Beling, and K. J. ChenDefect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (VGa) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180... (Read more)
- 11. J. Appl. Phys. 105, 053709 (2009) , “Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence”, Yunlong Cui, David D. Caudel, Pijush Bhattacharya, Arnold Burger, Krishna C. Mandal, D. Johnstone, and S. A. PayneDeep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Three... (Read more)
- 12. J. Appl. Phys. 105, 013504 (2009) , “Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices”, Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Akio Takano, Kentarou Sawano, and Yasuhiro ShirakiWe investigated the contributions of neutral and charged silicon self-interstitials to self- and boron diffusion during transient enhanced diffusion in silicon. We simultaneously observed self- and boron diffusion in silicon using natSi/28Si isotope superlattices. A calculation... (Read more)
- 13. Jpn. J. Appl. Phys. 48, 081003 (2009) , “Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN”, Kuan-Ting Liu, Shoou-Jinn Chang, and Sean WuThe effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant... (Read more)
- 14. Jpn. J. Appl. Phys. 48, 031205 (2009) , “Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide”, Kazuhiro Mochizuki, Haruka Shimizu, and Natsuki YokoyamaReported profiles of high-temperature (500 °C)-implanted boron ions diffused in 4H-silicon carbide at 1200–1900 °C for 5–90 min were simulated through a “dual-sublattice” modeling, in which a different diffusivity is assigned for diffusion via each sublattice, and a... (Read more)
- 15. Phys. Rev. B 79, 075207 (2009) , “EPR study of local symmetry sites of Ce3+ in Pb1−xCexA (A=S, Se, and Te)”, X. Gratens, V. Bindilatti, V. A. Chitta, N. F. Oliveira, and Jr.The local site symmetry of Ce3+ ions in the diluted magnetic semiconductors Pb1−xCexA (A=S, Se, and Te) has been investigated by electron-paramagnetic resonance (EPR). The experiments were carried out on single crystals with cerium... (Read more)
- 16. Phys. Rev. B 79, 075203 (2009) , “Hyperfine interaction in the ground state of the negatively charged nitrogen vacancy center in diamond”, S. Felton, A. M. Edmonds, and M. E. NewtonThe 14N, 15N, and 13C hyperfine interactions in the ground state of the negatively charged nitrogen vacancy (NV−) center have been investigated using electron-paramagnetic-resonance spectroscopy. The previously published parameters for the... (Read more)
- 17. Phys. Rev. B 79, 075201 (2009) , “First-principles studies of small arsenic interstitial complexes in crystalline silicon”, Yonghyun Kim, Taras A. Kirichenko, Ning Kong, Graeme Henkelman, and Sanjay K. BanerjeeWe present a first-principles study of the structure and dynamics of small As-interstitial complexes (AsI2, As2I2, AsI3, and As2I3) in crystalline Si. These complexes can be important components of stable As-interstitial clusters or... (Read more)
- 18. Phys. Rev. B 79, 014102 (2009) , “Vacancy defect positron lifetimes in strontium titanate”, R. A. Mackie, S. Singh, J. Laverock, S. B. Dugdale, and D. J. KeebleThe results of positron-annihilation lifetime spectroscopy measurements on undoped, electron-irradiated, and Nb-doped SrTiO3 single crystals are reported. Perfect lattice and vacancy defect positron lifetimes were calculated using two different first-principles schemes. The Sr-vacancy... (Read more)
- 19. Phys. Rev. Lett. 102, 065502 (2009) , “Transition Metal Impurities on the Bond-Centered Site in Germanium”, S. Decoster, S. Cottenier, B. De Vries, H. Emmerich, U. Wahl, J. G. Correia, and A. VantommeWe report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a combined approach of emission channeling experiments and ab initio total energy calculations. Following common expectation, a fraction of these transition metals (TMs) was found on the... (Read more)
- 20. Appl. Phys. Lett. 93, 152108 (2008) , “Internal gettering of iron in multicrystalline silicon at low temperature”, Rafael Krain, Sandra Herlufsen, and Jan SchmidtThe interstitial iron concentration in multicrystalline silicon wafers, determined from recombination lifetime measurements, is effectively reduced by annealing the wafers at very low temperature (300–500 °C). During annealing, the iron concentration decreases by more than one order of... (Read more)
- 21. Appl. Phys. Lett. 93, 141907 (2008) , “Experimental evidence of tetrahedral interstitial and bond-centered Er in Ge”, S. Decoster, B. De Vries, U. Wahl, J. G. Correia, and A. VantommeWe report on an emission channeling study of the lattice site location of implanted Er in Ge together with its thermal stability. We found direct experimental evidence of Er atoms located on the tetrahedral (T) interstitial site and on the bond-centered (BC) site, with a maximum total occupancy... (Read more)
- 22. Appl. Phys. Lett. 93, 103505 (2008) , “Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance”, A. Stesmans, P. Somers, V. V. Afanas'ev, W. Tian, L. F. Edge, and D. G. SchlomElectron spin resonance study on heteroepitaxial Si/insulator structures obtained through the growth of epi-Lu2O3 films on (111)Si (~4.5 % mismatched) by reactive molecular beam epitaxy indicates the presence in the as-grown state of interfacial Pb... (Read more)
- 23. Appl. Phys. Lett. 93, 032108 (2008) , “High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC”, Giovanni Alfieri and Tsunenobu KimotoWe report on the thermal stability of deep levels detected after 1 MeV electron irradiated p-type 6H-SiC. The investigation was performed by deep level transient spectroscopy, and an isochronal annealing series was carried out in the 373–2073 K temperature range. We found seven... (Read more)
- 24. Appl. Phys. Lett. 92, 222109 (2008) , “Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction”, Q. L. Gu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa, Y. F. Hsu, A. B. Djurišić, C. Y. Zhu, S. Fung, and L. W. LuNitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junction was subsequently formed by postimplantation annealing in air. Deep level transient spectroscopy was used to investigate deep level defects induced by N+ implantation and... (Read more)
- 25. Appl. Phys. Lett. 92, 142105 (2008) , “Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC”, J. Wong-Leung and B. G. SvenssonHigh-purity and low-doped n-type epitaxial layers of 4H-SiC have been implanted with N and C ions by using energies in the MeV range and doses from 2×108 to 1×109 cm−2. Postimplant annealing was performed at 1100 °C prior to... (Read more)
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Updated at 2010-07-20 16:50:39
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