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- 1. Physica 116B, 306 (1983) , “ESR of Fe-S Pairs in Silicon”, O. F. Schirmer.The ESR of a new Fe-S center in Si is reported. It is shown that the g-values of three of the known Fe-S pairs are determined by exchange interaction of the angular momentum of Feio with that of a nearby S = 1/2 ion, which is likely to be S+ or (S-S)+. The analysis uses an analogy to the O2--centers in the alkali halides. Orbach relaxation of the ESR of the new Fe-S center shows that an excited state lines 8.4 meV above the groundstate. (Read more)
- 2. Phys. Rev. Lett. 1, 295 (1958) , “Spin of Fe57”, G. W. Ludwig, H. H. Woodbury, R. O. Carlson.The spin of the stable isotope Fe57 has been directly observed to be 1/2 from the electron spin resonance spectrum of iron-doped silicon.Samples were prepared by alloying several milligrams of ironenriched to contain 84.1% Fe57 onto silicon crystals 3mm×3mm×10mm.The iron was... (Read more)
- 3. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
- 4. Phys. Rev. B 37, 7268 (1988) , “Electron-nuclear double resonance of titanium in silicon: 47Ti and 49Ti ENDOR”, D. A. van Wezep, C. A. J. AmmerlaanThe electron-nuclear double-resonance spectra of interstitial 47Ti+ and 49Ti+ in silicon have been measured at 4.2 K. Spin Hamiltonians for these systems were determined and had to include hyperfine contributions of the type S3I and... (Read more)
- 5. Solid State Physics 13, 223-304 (1962) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Electron Spin Resonance in Semiconductors”, G. W. Ludwig, H. H. Woodbury.I. Introduction (p.223): II. The Resonance Technique (p.226): 1. The Spin Hamiltonian (p.226), 2. The Spin Resonance Spectrum (p.231), 3. Experimental Techniques (p.237), III. Resonance Studies in Silicon (p.243): 4. Shallow Donor Impurities (p.244), 5. Shallow Acceptor Impurities (p.259), 6. Transition Metal Ions (p.263), 7. Impurity Pairs (p.273), 8. Radiation Damage Centers (p.280), IV.Resonance Studies in Other Semiconductors (p.286): 9. Germanium (p.286), 10. Graphite and Diamond (p.290), 11. Silicon Carbide (p.293), 12. Indium Antimonide and Gallium Phosphide (p.294), 13. Zinc Sulfide and Related Semiconductors (p.295), Acknowledgments (p.304)
- 6. Phys. Rev. B 74, 235207 (2006) , “Vacancy-enhanced ferromagnetism in Fe-doped rutile TiO2”, Jun Chen, Paul Rulis, Lizhi Ouyang, S. Satpathy, and W. Y. ChingBased on a series of supercell density functional calculations of Fe-doped TiO2 both with and without O vacancy (VO), we show that VO plays an important role in determining the magnetic properties of the dilute magnetic semiconductors (DMS). Without... (Read more)
- 7. Phys. Rev. B 74, 184108 (2006) , “Interpreting Mössbauer spectra reflecting an infinite number of sites: An application to Fe1−xSi synthesized by pulsed laser annealing”, A. Falepin, S. Cottenier, C. M. Comrie, and A. VantommeWe present a study on the interpretation of conversion electron Mössbauer spectra reflecting an infinite number of sites, in casu Mössbauer spectroscopy on Fe1−xSi layers on Si, synthesized by pulsed laser annealing. These spectra display a broad... (Read more)
- 8. Phys. Rev. B 75, 144404 (2007) , “Ferromagnetism in Fe-doped ZnO nanocrystals: Experiment and theory”, Debjani Karmakar, S. K. Mandal, R. M. Kadam, P. L. Paulose, A. K. Rajarajan, T. K. Nath, A. K. Das, I. Dasgupta, and G. P. DasFe-doped ZnO nanocrystals are successfully synthesized and structurally characterized by using x-ray diffraction and transmission electron microscopy. Magnetization measurements on the same system reveal a ferromagnetic to paramagnetic transition temperature above 450 K with a low-temperature... (Read more)
- 9. J. Appl. Phys. 100, 023539 (2006) , “Mechanisms for the activation of ion-implanted Fe in InP”, T. Cesca, A. Verna, G. Mattei, A. Gasparotto, B. Fraboni, G. Impellizzeri, and F. PrioloIn this paper we present structural and electrical investigations on high temperature Fe-implanted InP. The aim of the work is to relate the lattice position of the implanted atoms after annealing treatments (from 300 to 600 °C) with their electrical activation as compensating deep traps and... (Read more)
- 10. Phys. Rev. B 74, 195204 (2006) , “Interaction of iron with the local environment in SiGe alloys investigated with Laplace transform deep level spectroscopy”, Vl. Kolkovsky, A. Mesli, L. Dobaczewski, N. V. Abrosimov, Z. R. ytkiewicz, and A. R. PeakerLaplace transform deep level transient spectroscopy (LDLTS) is used to investigate the alloy effects on iron related deep centers in Si1−xGex. A clear buildup of alloy disorder as a function of the germanium content has been observed for the isolated... (Read more)
- 11. Phys. Rev. B 74, 165201 (2006) , “Internal 5E ? 5T2 transition of Fe2+ in GaN”, E. Malguth, A. Hoffmann, and X. XuWe present Fourier transform infrared transmission measurements on Fe-doped GaN. A set of freestanding high-quality GaN:Fe samples with varying Fe concentrations shows a rich absorption structure around 390 meV which is unambiguously assigned to the internal... (Read more)
- 12. Phys. Rev. B 74, 165202 (2006) , “Structural and electronic properties of Fe3+ and Fe2+ centers in GaN from optical and EPR experiments”, E. Malguth, A. Hoffmann, W. Gehlhoff, O. Gelhausen, M. R. Phillips, and X. XuThis work provides a consistent picture of the structural, optical, and electronic properties of Fe-doped GaN. A set of high-quality GaN crystals doped with Fe at concentrations ranging from 5×1017 cm–3 to 2×1020 cm–3 is... (Read more)
- 13. Physica B 376-377, 486 (2006) , “Preferential substitution of Fe on physically equivalent Ga sites in GaN”, W. Gehlhoff, D. Azamat, U. Haboeck, A. HoffmannThe EPR spectra of Fe3+ in high-quality thick freestanding hydride vapor phase grown GaN have been studied in the X- and Q-band. A complex resonance pattern with numerous lines of different intensities provided by three different defects is observed for these nearly stress-free iron-doped samples.... (Read more)
- 14. J. Appl. Phys. 100, 074313 (2006) , “Deep levels in silicon Schottky junctions with embedded arrays of ? -FeSi2 nanocrystallites”, A. Tsormpatzoglou, D. H. Tassis, C. A. Dimitriadis, L. Dózsa, N. G. Galkin, D. L. Goroshko, V. O. Polyarnyi, and E. A. ChusovitinSchottky contacts on p-type silicon, with embedded arrays of β-FeSi2 nanocrystallites, were studied by current-voltage (I-V), deep level transient spectroscopy (DLTS), and low-frequency noise measurements. Forward I-V characteristics on logarithmic... (Read more)
- 15. J. Appl. Phys. 100, 024510 (2006) , “Influence of iron contamination on the performances of single-crystalline silicon solar cells: Computed and experimental results”, S. Dubois, O. Palais, M. Pasquinelli, S. Martinuzzi, C. Jaussaud, and N. RondelIn this paper, the impact of iron contamination on the conversion efficiency of single-crystalline p-type silicon solar cells is investigated by means of the combination of numerical simulations and experimental data, taking into account the more recent results about the properties of iron in... (Read more)
- 16. J. Vac. Sci. Technol. B 22, 120-125 (2004) , “Properties of Fe-doped semi-insulating GaN structures”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, S. J. PeartonThe properties of semi-insulating GaN films with the lower part of the film doped with Fe are reported. The 300 K sheet resistivity of the films was 2×1010 /square with an activation energy of the dark conductivity of 0.5 eV. The Fermi level is also pinned at... (Read more)
- 17. Appl. Phys. Lett. 89, 042503 (2006) , “Evidence for magnetism due to oxygen vacancies in Fe-doped HfO2 thin films”, Nguyen Hoa Hong, Nathalie Poirot, and Joe SakaiFe-doped HfO2 thin films are room temperature ferromagnetic. In comparison with results of the undoped HfO2 films, it seems that the Fe doping is not the main cause for the ferromagnetism but only acts as a catalyst. Experimental results of oxygen annealing and vacuum heat... (Read more)
- 18. Phys. Rev. B 74, 054111 (2006) , “EPR investigation of iron-related centers in 57Fe-doped KTaO3”, P. G. Baranov, A. G. Badalyan, D. V. Azamat, V. A. Trepakov, A. P. Bundakova, E. A. Ruzanova, V. S. Vikhnin, H. Hesse, and S. E. KapphanThree dominant iron centers are studied in the as-grown 57Fe-doped single KTaO3 crystals. For each of the centers, which were labeled as rhombic FeTa3+ and two axial Fe-related centers FeK3+-OI and (Fe). The... (Read more)
- 19. Appl. Phys. Lett. 89, 012508 (2006) , “Ferromagnetism in Fe-implanted a-plane ZnO films”, P. Wu, G. Saraf, Y. Lu, D. H. Hill, R. Gateau, L. Wielunski, R. A. Bartynski, D. A. Arena, J. Dvorak, A. Moodenbaugh, T. Siegrist, J. A. Raley, and Yung Kee YeoFe ions of dose 5×1016 cm–2 were implanted at 200 keV into a-plane ZnO epitaxial films. The epitaxial quality of the postannealed samples was verified by x-ray diffraction -rocking curves and scans, whereas x-ray absorption spectroscopy identified the... (Read more)
- 20. Phys. Rev. B 73, 184122 (2006) , “Off-center instability in SrCl2:Fe+: Role of unoccupied 4p orbitals”, P. García-Fernández, J. A. Aramburu, M. T. Barriuso, and M. MorenoRecent electron nuclear double resonance experiments on the Fe(II) center in SrCl2:Fe+ have unambiguously demonstrated that an isolated Fe+ impurity (without any close defect) undergoes a big off-center motion along 001 type directions. As Fe+ in... (Read more)
- 21. Phys. Rev. B 73, 184105 (2006) , “Iron-oxygen vacancy defect association in polycrystalline iron-modified PbZrO3 antiferroelectrics: Multifrequency electron paramagnetic resonance and Newman superposition model analysis”, Hrvoje Metri, Rüdiger-A. Eichel, Klaus-Peter Dinse, Andrew Ozarowski, Johan van Tol, Louis Claude Brunel, Hans Kungl, Michael J. Hoffmann, Kristin A. Schönau, Michael Knapp, and Hartmut FuessBy utilizing multifrequency electron paramagnetic resonance (EPR) spectroscopy, the iron functional center in Fe3+-modified polycrystalline lead zirconate (PbZrO3) was studied. The single phase polycrystalline sample remained orthorhombic and antiferroelectric down to 20 K as... (Read more)
- 22. Phys. Rev. B 73, 174103 (2006) , “Electron-trapping centers and interstitials in chlorinated SrCl2:Fe single crystals”, D. Ghica, S. V. Nistor, E. Goovaerts, D. Schoemaker, H. Vrielinck, and F. CallensElectron-trapped Fe+-type centers, produced by x-ray irradiation at 80 K and further annealing at higher temperatures in iron-doped SrCl2 single crystals grown in chlorine gas, have been investigated by electron paramagnetic resonance. The Fe+(III) and... (Read more)
- 23. Solid State Commun. 8, 45-47 (1970) , “A note on the splitting of the ( →← -) line in the ESR spectrum of Fe3+ in ZnO”, I. D. Campbell , J. O. CopeIons of spin which occupy inequivalent cation sites in a wurtzite lattice show ESR line splitting. An analytical expression is derived which describes the dependence of the splitting of the ( →← -) line on crystal orientation. This expression provides a convenient method of deducing... (Read more)
- 24. Solid State Commun. 101, 611-615 (1997) , “Identification of iron transition group trace impurities in GaN bulk crystals by electron paramagnetic resonance”, P. G. Baranov, I. V. Ilyin and E. N. MokhovWe report on the observation of electron paramagnetic resonance of iron, manganese and nickel trace impurities in bulk GaN crystals grown by the sublimation sandwich method. The resolved hyperfine structure due to interaction with 55Mn (I = 5/2) nuclei has been observed in GaN, allowing unambiguous... (Read more)
- 25. Superlatt. Microstruct. 39, 247-256 (2006) , “Optical and morphological features of bulk and homoepitaxial ZnO”, R. Yakimova, G.R. Yazdi, N.T. Son, I. Ivanov, M. Syv?j?rvi, S. Sun, G. Tompa, A. Kuznetsov , B. SvenssonZnO substrate crystals from two different sources, and epitaxial layers have been studied by SEM, AFM, photoluminescence and EPR. Although fabricated by the same growth principle, i.e. the hydrothermal technique, the substrates differ in terms of purity and structural quality. In the PL spectra of... (Read more)
- 26. Mater. Sci. Eng. B 126, 222-225 (2006) , “Magnetic properties of a new spintronic material—GaN:Fe”, H. Przybylińska, A. Wolos, M. Kiecana, M. Sawicki, T. Dietl, H. Malissa, C. Simbrunner, M. Wegscheider, H. Sitter, K. Rumpf, P. Granitzer, H. Krenn and W. JantschWe report on metal-organic chemical vapour deposition growth of GaN:Fe and its characterization by means of high-resolution X-ray diffraction, secondary ion mass spectroscopy, electron spin resonance, and magnetization measurements. Electron spin resonance studies demonstrate the existence of Fe in... (Read more)
- 27. Physica B 302-303, 233-238 (2001) , “Complexes of Gold and Platinum with Hydrogen in Silicon”, P. T. Huy and C. A. J. AmmerlaanThree centers that involve gold or platinum and hydrogen have been observed in n-type hydrogenated silicon by electron paramagnetic resonance. The first two centers, labeled Si-NL63 and Si-NL64, were detected in the gold-doped samples revealing hyperfine interaction with two gold atoms for the... (Read more)
- 28. Phys. Rev. 117, 1286 (1960) , “Magnetic Moment of Fe57”, G. W. Ludwig, H. H. Woodbury.An electron-nuclear double resonance study has been made on the spectrum of neutral iron atoms in silicon. These measurements lead to a value of +0.0903?0.0007 nm for the magnetic moment of Fe57. (Read more)
- 29. Phys. Rev. 137, A1520 (1965) , “Paramagnetic Resonance Study of a Deep Donor in Silicon”, G. W. Ludwig.The impurity sulfur acts as a double donor in silicon. Assuming the ion to be substitutional, S+ is analogous to neutral phosphorus, except that the binding energy of the donor electron is much greater. Here we report paramagnetic resonance absorption of S+, including a... (Read more)Si| EPR| Iron S Sulfur U donor n-type .inp files: Si/Sulfur Si/FeS Si/Sulfur2 Si/Sulfur3 | last update: Takahide Umeda
- 30. Phys. Rev. 117, 102 (1960) , “Spin Resonance of Transition Metals in Silicon”, H. H. Woodbury and G. W. LudwigSpin resonance measurements are reported for various charge states of four transition metals in silicon, namely for V++, Cr+, Mn-, Mn++, and Fe0. In each case the g tensor and the hyperfine interaction with the impurity nucleus are isotropic.... (Read more)Si| EPR| Iron Manganese Vanadium .inp files: Si/Mn- Si/Fe Si/Mn4 Si/Vanadium | last update: Masatoshi Sasaki
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