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- 1. Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Shallow Impurity States in Silicon and Germanium”, W. KohnI. Introduction (p.258): II. Emprical Properties (p.261): 1. Energy Levels (p.261), a. Ionization Energies, b. Spectra of Excited States, 2. Spin Resonance (p.266), a. Electron Spin Resonance, b. Double Resonance, 3. Static Magnetic Susceptibility (p.271), III. Structure of Donor States (p.271): 4. Conduction Bands of Silicon and Germanium (p.271), a. Silicon, b. Germanium, 5. Effective Mass Theory of Donor States (p.274), a. Single Band Minimum at k=0, b. Several Conduction Band Minima, c. Matrix Elements for Radiative Transitions, 6. Numerical Results and Comparison with Experiments (p.285), a. Energy Levels, b. Wave Functions, 7. Corrections to the Effective Mass Formalism (p.289), a. General Considerations, b. Corrected Wave Functions, c. Comparison with Experiment, IV. Structure of Acceptor States (p.297): 8. Valence Bands of Silicon and Germanium (p.297), a. Silicon, b. Germanium, 9. Effective Mass Equations for Acceptor States (p.300), 10. Approximate Solutions and Comparison with Experiment (p.301) a. Germanium b. Silicon V.Effects of Strains and of Static Electric and Magnetic Fields (p.306): 11. Strains (p.306) a. Donor States, b. Acceptor States, 12. Stark Effect (p.311)
- 2. Phys. Rev. Lett. 85, 2761 (2000) , “Detection of Interstitial Ga in GaN”, K. H. Chow, G. D. Watkins, Akira Usui, M. MizutaWe report the direct detection of interstitial Ga by optical detection of electron paramagnetic resonance (ODEPR) in the photoluminescence of n-type GaN after irradiation in situ at 4.2 K with 2.5 MeV electrons. It is stable upon annealing until room temperature, where it becomes mobile and trapped... (Read more)
- 3. Appl. Phys. Lett. 80, 1334 (2002) , “Production of nitrogen acceptors in ZnO by thermal annealing”, N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, D. C. LookNitrogen acceptors are formed when undoped single crystals of zinc oxide (ZnO) grown by the chemical-vapor transport method are annealed in air or nitrogen atmosphere at temperatures between 600 and 900 °C. After an anneal, an induced near-edge absorption band causes the crystals to appear... (Read more)
- 4. Phys. Rev. B 69, 45207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 5. Phys. Rev. B 69, 45208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 6. Phys. Rev. B 74, 153201 (2006) , “Light-induced hyperfine 69Ga shifts in semi-insulating GaAs observed by optically polarized NMR”, Kannan Ramaswamy, Stacy Mui, and Sophia E. HayesWe report the observation of 69Ga NMR light induced hyperfine shifts at 6 K in semi-insulating GaAs detected by optically polarized nuclear magnetic resonance in a magnetic field of 4.7 T. The main features of the observed shift are a systematic change in the absolute shift value as the... (Read more)
- 7. Phys. Rev. B 74, 205207 (2006) , “Charge-dependent migration pathways for the Ga vacancy in GaAs”, Fedwa El-Mellouhi, Norm, and MousseauUsing a combination of the local-basis ab initio program SIESTA and the activation-relaxation technique we study the diffusion mechanisms of the gallium vacancy in GaAs. Vacancies are found to diffuse to the second neighbor using two different mechanisms, as well as to the first and fourth... (Read more)
- 8. Nature 442, 436 (2006) , “Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions”, D. Kitchen, A. Richardella, J. -M. Tang, M. E. Flatt, A. YazdaniThe discovery of ferromagnetism in Mn-doped GaAs1 has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices2, 3, 4. A major hurdle for realistic applications of Ga1-XMnXAs, or other dilute magnetic semiconductors, remains that their ferromagnetic transition temperature is below room temperature. Enhancing ferromagnetism in semiconductors requires us to understand the mechanisms for interaction between magnetic dopants, such as Mn, and identify the circumstances in which ferromagnetic interactions are maximized5. Here we describe an atom-by-atom substitution technique using a scanning tunnelling microscope (STM) and apply it to perform a controlled study at the atomic scale of the interactions between isolated Mn acceptors, which are mediated by holes in GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn–Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-XMnXAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. (Read more)
- 9. J. Appl. Phys. 99, 083510 (2006) , “Capture barrier for DX centers in gallium doped Cd1–xMnxTe”, Ewa Placzek-Popko, Anna Nowak, Jan Szatkowski, and Kazimierz SieranskiWe report on the capture barrier for the gallium related DX center in Cd0.99Mn0.01Te. In order to determine the barrier height, two methods were applied: an analysis of the persistent photoconductivity decay and the optical deep level transient spectroscopy... (Read more)
- 10. J. Appl. Phys. 100, 083521 (2006) , “Thermally activated charge reversibility of gallium vacancies in GaAs”, Fedwa El-Mellouhi, Norm, and MousseauThe dominant charge state for the Ga vacancy in GaAs has been the subject of a long debate, with experiments suggesting −1, −2, or −3 as the best answer. We revisit this problem using ab initio calculations to compute the effects of temperature on the Gibbs free energy of... (Read more)
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