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- 1. Phys. Rev. B 35, 1582 (1987) , “Electronic and Atomic Structure of the Boron-Vacancy Complex in Silicon”, M. Sprenger, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanIn electron-irradiated boron-doped silicon the electron paramagnetic resonance spectrum Si-G10 has been studied. Earlier this spectrum had tentatively been identified with a boron-vacancy complex in a next-nearest-neighbor configuration. With electron-nuclear double resonance the hyperfine and... (Read more)
- 2. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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