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- 1. Phys. Rev. Lett. 92, 125504 (2004) , “Low Energy Electron Irradiation Induced Deep Level Defects in 6H–SiC: The Implication for the Microstructure of the Deep Levels E1/E2”, X. D. Chen, C. L. Yang, M. Gong, W. K. Ge, S. Fung, C. D. Beling, J. N. Wang, M. K. Lui, and C. C. LingN-type 6HSiC samples irradiated with electrons having energies of Ee = 0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for Ee0.3 MeV,... (Read more)
- 2. J. Appl. Phys. 90, 3377 (2001) , “Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy”, A. Kawasuso, F. Redmann, R. Krause-Rehberg, T. Frank, M. Weidner, G. Pensl, P. Sperr, H. ItohThe annealing behavior of defects in n-type 6H SiC epilayers irradiated with 2 MeV electrons have been studied using positron annihilation and deep level transient spectroscopy. Vacancy-type defects are annealed at 500700 °C and 12001400 °C. From the analysis of... (Read more)
- 3. J. Appl. Phys. 81, 6155 (1997) , “Deep level defects in electron-irradiated 4H SiC epitaxial layers”, C. Hemmingsson, N. T. Son, O. Kordina, J. P. Bergman, E. Janz?n, J. L. Lindstr?m, S. Savage, N. NordellDeep level defects in electron-irradiated 4H SiC epitaxial layers grown by chemical vapor deposition were studied using deep level transient spectroscopy. The measurements performed on electron-irradiated p+n junctions in the temperature range 100750 K revealed... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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