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- 1. Appl. Phys. Lett. 80, 4753-4755 (2002) , “Characterization of S centers generated by thermal degradation in SiO2 on (100)Si”, A. Stesmans, B. Nouwen, D. Pierreux, and V. V. Afanas'evThe structural degradation of thermal SiO2 on (100)Si under isochronal vacuum annealing in the range Tan = 950 °C1250 °C was monitored by electron spin resonance (ESR) in terms of point defect creation, including... (Read more)
- 2. Phys. Rev. B 34, 7524-7533 (1986) , “Fundamental radiation-induced defect centers in synthetic fused silicas: Atomic chlorine, delocalized E' centers, and a triplet state”, D. L. Griscom and E. J. FriebeleA series of synthetic fused silicas of diverse OH contents was subjected to 100-keV x irradiations at 77 K and investigated by electron-spin-resonance techniques at ?110 K or higher temperatures. Spectra were recorded at X-band frequencies (?9.2–9.3 GHz) both as the first derivative of absorption... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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Materials
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Details
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Bond(35 tags)
Defect(interstitial)(18 tags)
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