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- 1. J. Appl. Phys. 99, 083510 (2006) , “Capture barrier for DX centers in gallium doped Cd1–xMnxTe”, Ewa Placzek-Popko, Anna Nowak, Jan Szatkowski, and Kazimierz SieranskiWe report on the capture barrier for the gallium related DX center in Cd0.99Mn0.01Te. In order to determine the barrier height, two methods were applied: an analysis of the persistent photoconductivity decay and the optical deep level transient spectroscopy... (Read more)
- 2. Phys. Rev. B 33, 4320 (1986) , “DX center: Crossover of deep and shallow states in Si-doped AlxGa1-xAs”, Atsushi Oshiyama, Shuhei OhnishiA new microscopic model for the origin of the DX center in Si-doped AlxGa1-xAs is proposed based on discrete variational X? cluster calculations. The calculated level structure shows that the antibonding A1 state of Si, which lies in the conduction bands as a... (Read more)
- 3. Jpn. J. Appl. Phys. 26, L273 (1987) , “Determination of Al Composition and DLTS Measurements of AlxGa1-xSb on GaSb Substrate”, Yoshikazu Takeda, Xiao Cheng Gong, Yu Zhu, Akio SasakiDLTS (Deep Level Transient Spectroscopy) measurements have been carried out to investigate the electron-trap levels in Te-doped AlxGa1-xSb over a composition range from 0 to 0.4. Deep electron-traps were not detected in Te-doped n-type GaSb and AlGaSb with Al... (Read more)
- 4. J. Appl. Phys. 62, 4786 (1987) , “The capture barrier of the DX center in Si-doped AlxGa1–xAs”, P. M. Mooney, N. S. Caswell, and S. L. WrightWe report measurements of the capture barrier for the DX center in Si-doped AlxGa1xAs as a function of the alloy composition. A model of the capture process which requires a distribution of capture barrier heights has been fit to the data for... (Read more)
- 5. Phys. Rev. B 42, 11791 (1990) , “Donor states in GaAs under hydrostatic pressure”, X. Liu, L. Samuelson, M.-E. Pistol, M. Gerling, and S. NilssonSpectroscopic studies have been carried out for GaAs crystals under hydrostatic pressure, intended for the investigation of effective-mass donor levels associated with different conduction-band minima and the DX center. Our results reveal the existence of three donor states appearing in the band... (Read more)
- 6. Semicond. Sci. Technol. 6, B70 (1991) , “Bistability, local symmetries and charge states of Sn-related donors in AlxGa1-xAs and GaAs under pressure studied by Mossbauer spectroscopy”, D. L. Williamson, P. GibartThe bistable character of Sn donors AlxGa1-xAs for x>0.2 or in GaAs under pressure >2.4 GPa has been studied by 119Sn Mossbauer spectroscopy (MS). The shallow Sn donor state and the deep Sn DX state are observed to exist simultaneously and are readily... (Read more)
- 7. Phys. Rev. Lett. 66, 774 (1991) , “Local-vibrational-mode spectroscopy of DX centers in Si-doped GaAs under hydrostatic pressure”, J. A. Wolk, M. B. Kruger, J. N. Heyman, W. Walukiewicz, R. Jeanloz, E. E. HallerWe report the observation of a local vibrational mode (LVM) in hydrostatically stressed, Si-doped GaAs. The corresponding infrared absorption peak is distinct from the SiGa shallow-donor LVM peak and is assigned to the Si DX center. The relative intensities of the Si DX LVM and the Si... (Read more)
- 8. Phys. Rev. Lett. 63, 2276 (1989) , “Photoluminescence transients due to hole capture at DX centers in AlxGa1-xAs:Si”, G. Brunthaler, K. Ploog, W. JantschThe near-band-gap photoluminescence of AlGaAs:Si shows a slow intensity transient after cooling the sample in darkness to low temperatures. This transient correlates to the Si dopant concentration. By investigating the behavior for below- and above-band-gap illumination we show that the observed... (Read more)
- 9. Phys. Rev. B 39, 10063 (1989) , “Energetics of DX-center formation in GaAs and AlxGa1-xAs alloys ”, D. J. Chadi, K. J. ChangThe energetics of the shallow-deep transition of donor states in AlxGa1-xAs alloys and the problem of Fermi-level pinning by DX centers in highly doped GaAs are examined via simple theoretical models and ab initio self-consistent pseudopotential total-energy calculations. The... (Read more)
- 10. Jpn. J. Appl. Phys. 29, L388 (1990) , “Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si”, Toshimasa Fujisawa, Junji Yoshino, Hiroshi KukimotoDX centers in GaAs codoped with Ge and Si have been investigated under a hydrostatic pressure, where Ge acts as a DX center, and Si as a shallow donor. It is demonstrated that the number of electrons trapped by the Ge DX center at 22 kbar increases with Si concentration and tends to saturate at a... (Read more)
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