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- 1. Phys. Rev. B 74, 033304 (2006) , “5-7-5 line defects on As/Si(100): A general stress-relief mechanism for V/IV surfaces”, W. E. McMahon, Iskander G. Batyrev, T. Hannappel, J. M. Olson, and S. B. ZhangAn entire family of nano-scale trenches, ridges, and steps has been observed experimentally on AsH3-exposed Si(100). Some of these line structures have been observed previously, but their structures have remained a mystery. Theoretical modeling shows that they are all based upon the same... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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