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- 1. Appl. Phys. Lett. 80, 1334 (2002) , “Production of nitrogen acceptors in ZnO by thermal annealing”, N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, D. C. LookNitrogen acceptors are formed when undoped single crystals of zinc oxide (ZnO) grown by the chemical-vapor transport method are annealed in air or nitrogen atmosphere at temperatures between 600 and 900 °C. After an anneal, an induced near-edge absorption band causes the crystals to appear... (Read more)
- 2. Phys. Rev. B 75, 195207 (2007) , “Effects of optical absorption on 71Ga optically polarized NMR in semi-insulating GaAs: Measurements and simulations”, Stacy Mui, Kannan Ramaswamy, and Sophia E. HayesThe intensity and the hyperfine shift of optically polarized NMR (OPNMR) signals of 71Ga in semi-insulating GaAs have been found to depend on the photon energy and the helicity of light used for optical pumping. Single-crystal GaAs wafers of two different thicknesses, 400 and 175 ... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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