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- 1. Appl. Phys. Lett. 80, 1334 (2002) , “Production of nitrogen acceptors in ZnO by thermal annealing”, N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, D. C. LookNitrogen acceptors are formed when undoped single crystals of zinc oxide (ZnO) grown by the chemical-vapor transport method are annealed in air or nitrogen atmosphere at temperatures between 600 and 900 °C. After an anneal, an induced near-edge absorption band causes the crystals to appear... (Read more)
- 2. Phys. Rev. B 64, 235202 (2001) , “Photosensitive electron paramagnetic resonance spectra in semi-insulating 4H SiC crystals”, E. N. Kalabukhova, S. N. Lukin, A. Saxler, W. C. Mitchel, S. R. Smith, J. S. Solomon, A. O. EvwarayePhotosensitive electron paramagnetic resonance (EPR) investigations of unintentionally doped, semi-insulating (s.i.) 4H?SiC have been made at 37 GHz and 77 K including photoexcitation and photoquenching experiments. In the dark the EPR spectrum consists of a low intensity line due to boron on the... (Read more)
- 3. phys. stat. sol. (a) 162, 95-151 (1997) , “EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes”, S. Greulich-WeberInvestigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
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Updated at 2010-07-20 16:50:39
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