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- 1. Phys. Rev. B 75, 073409 (2007) , “Why thermal H2 molecules adsorb on SiC(001)-c(4×2) and not on SiC(001)-(3×2) at room temperature”, Xiangyang Peng, Peter Krüger, and Johannes PollmannIn a recent experiment, Derycke et al. have made the exciting observation that H2 molecules readily adsorb dissociatively on the c(4×2) but not on the 3×2 surface of SiC(001) at room temperature. To unravel this spectacular reactivity difference, we have investigated a... (Read more)
- 2. J. Appl. Phys. 99, 113520 (2006) , “Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment”, A. V. Vasin, S. P. Kolesnik, A. A. Konchits, V. I. Kushnirenko, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, and S. AshokHydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. An integrated investigation of the effect of vacuum annealing temperature on photoluminescence properties and paramagnetic defects and its correlation with structural... (Read more)
- 3. J. Appl. Phys. 99, 023523 (2006) , “Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy”, G. Brauer, W. Anwand, W. Skorupa, S. Brandstetter, and C. TeichertSystematic slow positron implantation spectroscopy (SPIS) and atomic force microscopy studies of various 6H-SiC samples are presented to clarify the role of conductivity type, crystal quality, ion implantation (B+,Al+, and N+), and annealing (1.650 °C) in... (Read more)
- 4. Appl. Phys. Lett. 87, 241906 (2005) , “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H–SiC homoepitaxially grown film”, Takuro Tomita, Shigeki Matsuo, Tatsuya Okada, Tsunenobu Kimoto, Hiroyuki Matsunami, Takeshi Mitani, Shin-Ichi NakashimaThe structures of comet defects in a 4HSiC homoepitaxially grown film are investigated by deep-ultraviolet micro-Raman spectroscopy. Spatial distribution of the 4H- and 3CSiC is clearly distinguished both from the intensities of the folded longitudinal acoustic phonon mode and the peak... (Read more)
- 5. Appl. Phys. Lett. 85, 926 (2004) , “Atomic cracks and (2×2×)-R30° reconstruction at 6H-SiC(0001) surface”, E. Amy, P. Soukiassian, C. BrylinskiWe investigate the Si-rich 3×3 to Si-terminated × phase transition of the 6H-SiC(0001) surface by atom-resolved scanning tunneling microscopy. We find a 2×2-R30° reconstruction, coexisting with few 3×3 domains. While a high-quality 3×3 surface preparation is... (Read more)
- 6. J. Appl. Phys. 95, 490 (2004) , “Surface-state origin for the blueshifted emission in anodically etched porous silicon carbide”, Tilghman L. Rittenhouse, Paul W. Bohn, Tim K. Hossain, Ilesanmi Adesida, James Lindesay, Alfred MarcusAnodic etching of SiC yields a highly monodisperse distribution of nanometer dimension porous structures which extend to a significant depth. Cathodoluminescence (CL) studies of the porous layers yield luminescence peaks in the UV region, above the band gap energy of bulk SiC. Higher etching current... (Read more)
- 7. Phys. Rev. Lett. 91, 136101 (2003) , “Ab initio Simulations of Homoepitaxial SiC Growth”, M. C. Righi, C. A. Pignedoli, R. Di Felice, C. M. Bertoni, A. CatellaniWe present first-principle calculations on the initial stages of SiC homoepitaxial growth on the SiC(111)(×) surface. We show that the nonstoichiometric reconstruction plays a relevant role in favoring the attainment of high-quality films. The motivation is twofold: On one hand, we... (Read more)
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Updated at 2010-07-20 16:50:39
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