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- 1. Phys. Rev. Lett. 98, 026802 (2007) , “Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating p-n Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy”, Shoji Yoshida, Yuya Kanitani, Ryuji Oshima, Yoshitaka Okada, Osamu Takeuchi, and Hidemi ShigekawaThe doping characteristics and carrier transport in a GaAs p-n junction were visualized with a ~10 nm spatial resolution, using light-modulated scanning tunneling spectroscopy. The dynamics of minority carriers under operating conditions, such as recombination, diffusion, and electric... (Read more)
- 2. Phys. Rev. B 74, 161201 (2006) , “Detection of magnetic resonance of donor-bound electrons in GaAs by Kerr rotation”, T. A. Kennedy, J. Whitaker, A. Shabaev, A. S. Bracker, and D. GammonMagnetic resonance of electrons in lightly doped GaAs layers has been detected at 5.8 T by magneto-optical Kerr rotation. A study over a wide range of microwave powers shows (1) resonance without dynamic nuclear polarization (DNP), (2) resonance enhanced by DNP, and (3) DNP pinning of the resonance... (Read more)
- 3. Phys. Rev. B 74, 155203 (2006) , “Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As”, R. C. Myers, B. L. Sheu, A. W. Jackson, A. C. Gossard, P. Schiffer, N. Samarth, and D. D. AwschalomWe study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1%2% Mn. Samples are grown by... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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