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- 1. Phys. Rev. Lett. 98, 135506 (2007) , “Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors”, Yanfa Yan, Jingbo Li, Su-Huai Wei, and M. M. Al-JassimThe asymmetry doping problem has severely hindered the potential applications of many wideband gap (WBG) materials. Here, we propose a possible approach to overcome this long-standing doping asymmetry problem for WBG semiconductors. Our approach is based on the reduction of the ionization energies... (Read more)
- 2. Phys. Rev. Lett. 98, 045501 (2007) , “Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides”, Stephan Lany and Alex ZungerExisting defect models for In2O3 and ZnO are inconclusive about the origin of conductivity, nonstoichiometry, and coloration. We apply systematic corrections to first-principles calculated formation energies ΔH, and validate our theoretical defect model against... (Read more)
- 3. Appl. Phys. Lett. 89, 092122 (2006) , “Deep acceptor states in ZnO single crystals”, H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann, and G. BrauerThe authors report the observation of both acceptor- and donorlike defects in ZnO by deep level transient spectroscopy. The observation is facilitated by using a p-n junction allowing the injection of holes and electrons. The junction is realized by implanting a n-conducting ZnO... (Read more)
- 4. Appl. Phys. Lett. 89, 042106 (2006) , “Identification of acceptor states in Li-doped p-type ZnO thin films”, Y. J. Zeng, Z. Z. Ye, J. G. Lu, W. Z. Xu, L. P. Zhu, B. H. Zhao, and Sukit LimpijumnongWe investigate photoluminescence from reproducible Li-doped p-type ZnO thin films prepared by dc reactive magnetron sputtering. The LiZn acceptor state, with an energy level located at 150 meV above the valence band maximum, is identified from free-to-neutral-acceptor transitions.... (Read more)
- 5. Appl. Phys. Lett. 88, 152116 (2006) , “Donor and acceptor competitions in phosphorus-doped ZnO”, F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. LiuPhosphorus-doped ZnO films were grown by molecular-beam epitaxy with a GaP effusion cell as dopant source. Three growth regions were identified to obtain ZnO films with different conduction types. In the oxygen-extremely-rich region, phosphorus-doped ZnO films show n-type conduction with... (Read more)
- 6. Phys. Rev. B 74, 144432 (2006) , “Role of defects in ferromagnetism in Zn1−xCoxO: A hybrid density-functional study”, C. H. PattersonExperimental studies of Zn1−xCoxO as thin films or nanocrystals have found ferromagnetism and Curie temperatures above room temperature and that p- or n-type doping of Zn1−xCoxO can change its magnetic... (Read more)
- 7. Phys. Rev. B 74, 081201 (2006) , “Design of shallow acceptors in ZnO: First-principles band-structure calculations”, Jingbo Li, Su-Huai Wei, Shu-Shen Li, and Jian-Bai Xiap-type doping is a great challenge for the full utilization of ZnO as short-wavelength optoelectronic material. Due to a large electronegative characteristic of oxygen, the ionization energy of acceptors in ZnO is usually too high. By analyzing the defect wave-function character, we propose... (Read more)
- 8. Phys. Rev. Lett. 97, 106802 (2006) , “Role of Pr Segregation in Acceptor-State Formation at ZnO Grain Boundaries”, Yukio Sato, James P. Buban, Teruyasu Mizoguchi, Naoya Shibata, Masatada Yodogawa, Takahisa Yamamoto, and Yuichi IkuharaThe role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to... (Read more)
- 9. J. Appl. Phys. 94, 519-524 (2003) , “Molecular nitrogen (N2-" align="middle">) acceptors and isolated nitrogen (N–) acceptors in ZnO crystals”, N. Y. Garces, Lijun Wang, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. EasonElectron paramagnetic resonance (EPR) has been used to investigate molecular nitrogen and isolated nitrogen acceptors in single crystals of ZnO. These samples were grown by the seeded chemical vapor transport method with N2 added to the gas stream. A five-line EPR spectrum is observed at... (Read more)
- 10. Physica B 340-342, 225-229 (2003) , “Optical absorption of a Li-related impurity in ZnO”, Deirdre Mc Cabe, Karl Johnston, Martin O. Henry, Enda Mc Glynn, Eduardo Alves and J. John DaviesA defect associated with Li in ZnO is reported. This is an optical system which absorbs strongly in the red part of the spectrum: a doublet, the zero phonon lines are at 1.884 and 1.879 eV, respectively. The chemical nature of the centre is identified through isotope substitution. This is the first... (Read more)
- 11. Appl. Phys. Lett. 80, 1334 (2002) , “Production of nitrogen acceptors in ZnO by thermal annealing”, N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, D. C. LookNitrogen acceptors are formed when undoped single crystals of zinc oxide (ZnO) grown by the chemical-vapor transport method are annealed in air or nitrogen atmosphere at temperatures between 600 and 900 °C. After an anneal, an induced near-edge absorption band causes the crystals to appear... (Read more)
- 12. Physica B 308-310, 976-979 (2001) , “Magnetic resonance studies of ZnO”, W. E. Carlos, E. R. Glaser and D. C. LookWe have used EPR and ODMR to study state-of-the-art bulk ZnO single crystals. Most of the samples are n-type; however, under certain conditions (e-irradiated or annealed), we observe a center due to residual nitrogen (g||=1.9953, g=1.9633 and Aiso=1.225 mT, Aaniso=0.864 mT). The N center is a... (Read more)
- 13. Solid State Commun. 25, 77-80 (1978) , “Exchange broadened, optically detected ESR spectra for luminescent donor-acceptor pairs in Li doped ZnO”, R. T. Cox, D. Block, A. Hervé, R. Picard and C. SantierR. HelbigApplication of optically detected ESR to the yellow photoluminescence of Li doped ZnO gives ESR spectra for shallow donor - lithium acceptor pairs, showing that at least a fraction of the yellow emission is donor-acceptor (D-A) luminescence. The distribution of separations rDA gives a spectrum of... (Read more)
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