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- 1. J. Appl. Phys. 93, 9697-9702 (2003) , “Growth and characterization of GaN:Mn epitaxial films”, T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, L. G?rgens, J. B. Philipp, O. AmbacherThe oxidation states of Mn in epitaxial GaN films grown by plasma induced molecular beam epitaxy were investigated by electron spin resonance (ESR), elastic recoil detection, superconducting quantum interference device magnetization, and photothermal deflection spectroscopy measurements. Comparison... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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