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- 1. Phys. Rev. B 75, 193201 (2007) , “Compensating point defects in 4He+-irradiated InN”, F. Tuomisto, A. Pelli, K. M. Yu, W. Walukiewicz, and W. J. SchaffWe use positron annihilation spectroscopy to study 2 MeV 4He+-irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a... (Read more)
- 2. Phys. Rev. B 74, 045208 (2006) , “Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy”, G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, and M. GrundmannHigh-quality single crystals of ZnO in the as-grown and N+ ion-implanted states have been investigated using a combination of three experimental techniquesnamely, positron lifetime/slow positron implantation spectroscopy accompanied by theoretical calculations of the positron... (Read more)
- 3. Physica B 340-342, 903-907 (2003) , “Pulsed EPR studies of shallow donor impurities in SiC”, J. Isoya, T. Ohshima, N. Morishita, T. Kamiya, H. Itoh, S. YamasakiSpin-lattice relaxation time (T1) and phase memory time (TM) of shallow donors in 3C-, 4H- and 6H-SiC have been measured in time domain by using pulsed EPR technique. The temperature dependence of T1 suggests that the Orbach process should be frozen at relatively high temperatures. Shallow donors in SiC are promising in attaining a sufficiently long phase memory time at temperatures much higher than Si:P. (Read more)
- 4. Phys. Rev. B 59, 10823-10829 (1999) , “Defect energy levels in electron-irradiated and deuterium-implanted 6H silicon carbide”, M. O. Aboelfotoh, J. P. DoyleUsing deep-level transient spectroscopy, we studied defect energy levels and their annealing behavior in nitrogen-doped 6H-SiC epitaxial layers irradiated with 2-MeV electrons and implanted with 300-KeV deuterium or hydrogen at room temperature. Five levels located at Ec-0.34,... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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