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- 1. phys. stat. sol. (b) 221, 625-631 (2000) , “Identification of the Gold-Lithium Defect L1 in Silicon with the Trigonal Centre Au2--(Li+)3 by Electrical, Optical and Magnetic Resonance Spectroscopy”, B. Langhanki, J. –M. SpaethN-type silicon doped with gold and lithium was investigated by Electron Paramagnetic Resonance (EPR) and Deep Level Transient Spectroscopy (DLTS), using two sets of samples with different defect concentrations of both gold and lithium. Photoluminescence (PL) on both sets of samples allowed to... (Read more)
- 2. Semicond. Sci. Technol. 10, 977 (1995) , “EPR and ENDOR Observation of Orthorhombic Au-Li and Pt-Li Pairs in Silicon: on the Problem of the Observation of Isolated AuSi0 with Magnetic Resonance”, S. Greulich-Weber, P. Alteheld, J. Reinke, H. Weihrich, H. Overhof, J. M. Spaeth.We report the observation of orthorhombic Au-Li and Pt-Li pairs in Si using EPR and ENDOR techniques and also MCDA spectroscopy. The EPR spectra alone could be mistaken as being due to orthorhombic isolated point defects and ENDOR is required to detect the Li partner of the pair. Comparison of the... (Read more)
- 3. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
- 4. Radiat. Eff. 8, 229 (1971) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon by EPR Measurements”, B. Goldstein.Single crystal sylicon, both with and without oxygen, has been diffused with lithium to concentrations ~1017/cm3, irradiated woth 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presene of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li---one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spin of 1/2. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiatioin at 40ºK followecd by annealing at higher temperatures show that both EPR defects described above begin to form at about 200ºK and begin to decrease at about 275ºK---just as does the 250ºK reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitial which produce a (Li-O-interstitial) complex in O-containing Si, and (Li-interstitial) complex in O-free Si.
- 5. Phys. Rev. B 2, 4110 (1970) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon”, B. Goldstein.Single-crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ? 1017/cm3, irradiated with 1-1.5-MeV electrons, and the ensuing defects studied by EPR and electrical measurements. The presence of oxygen strongly affects the properties of... (Read more)Si| EPR electron-irradiation| Lithium RCA3 RCA4 n-type .inp files: Si/Li3 Si/Li4 | last update: Takahide Umeda
- 6. Phys. Rev. B 1, 4071 (1970) , “Electron Paramagnetic Resonance Studies of a System with Orbital Degeneracy: The Lithium Donor in Silicon”, G. D. Watkins and Frank S. HamElectron-paramagnetic-resonance (EPR) and electron-nuclear double-resonance (ENDOR) spectra are reported for the first time for the isolated interstitial lithium shallow-donor center in silicon. In zero applied stress the EPR spectrum is complicated because of the fivefold orbital degeneracy... (Read more)
- 7. Phys. Rev. Lett. 17, 428 (1966) , “Direct Observation of Lithium-Defect Interaction in Silicon by Electron Paramagnetic Resonance Measurements”, Bernard GoldsteinElectron paramagnetic resonance measurements have been used to observe directly the interaction of lithium with damage centers produced by electron irrsadiation in n-type, floatzone silicon. The silicon is characterized by low oxygen concentrations, with lithium as the predominant... (Read more)
- 8. Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Shallow Impurity States in Silicon and Germanium”, W. KohnI. Introduction (p.258): II. Emprical Properties (p.261): 1. Energy Levels (p.261), a. Ionization Energies, b. Spectra of Excited States, 2. Spin Resonance (p.266), a. Electron Spin Resonance, b. Double Resonance, 3. Static Magnetic Susceptibility (p.271), III. Structure of Donor States (p.271): 4. Conduction Bands of Silicon and Germanium (p.271), a. Silicon, b. Germanium, 5. Effective Mass Theory of Donor States (p.274), a. Single Band Minimum at k=0, b. Several Conduction Band Minima, c. Matrix Elements for Radiative Transitions, 6. Numerical Results and Comparison with Experiments (p.285), a. Energy Levels, b. Wave Functions, 7. Corrections to the Effective Mass Formalism (p.289), a. General Considerations, b. Corrected Wave Functions, c. Comparison with Experiment, IV. Structure of Acceptor States (p.297): 8. Valence Bands of Silicon and Germanium (p.297), a. Silicon, b. Germanium, 9. Effective Mass Equations for Acceptor States (p.300), 10. Approximate Solutions and Comparison with Experiment (p.301) a. Germanium b. Silicon V.Effects of Strains and of Static Electric and Magnetic Fields (p.306): 11. Strains (p.306) a. Donor States, b. Acceptor States, 12. Stark Effect (p.311)
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