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- 1. J. Appl. Phys. 99, 113507 (2006) , “Grazing incidence small-angle x-ray scattering from defects induced by helium implantation in silicon”, D. Babonneau, M.-F. Beaufort, A. Declémy, J.-F. Barbot, and J.-P. SimonThe formation and growth of defects, including nanocavities and extended interstitial-type defects, created by helium implantation in silicon (50 keV, 7.1015 cm2) in the temperature range of 100550 °C has been investigated by grazing incidence small-angle... (Read more)
- 2. J. Appl. Phys. 99, 104906 (2006) , “An x-ray topographic study of diamond anvils: Correlation between defects and helium diffusion”, Agnès Dewaele, Paul Loubeyre, and Ramesh AndréX-ray topographic images of several dozens of diamonds have been recorded before and after their use as anvils in a diamond anvil high pressure cell. The aim of this study is to better understand and prevent the breakage of diamond anvils when they are used in contact with a helium sample. Indeed,... (Read more)
- 3. J. Appl. Phys. 99, 043509 (2006) , “Influence of metal trapping on the shape of cavities induced by high energy He+ implantation”, R. El Bouayadi, G. Regula, M. Lancin, B. Pichaud, and M. DesvignesIn He implantation induced cavities highly contaminated with metals (Au, Ni, Pt) we found that, when no three-dimensional structure is observed, the shape of the cavities can be strongly modified depending on the nature of the metal and on its trapped quantity. The equilibrium shape of cavities is... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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Materials
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Technique
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Details
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Bond(35 tags)
Defect(interstitial)(18 tags)
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Element(65 tags)
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Sample(17 tags)
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