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- 1. Phys. Rev. B 77, 195203 (2008) , “Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC”, J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. WellmannThis paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at... (Read more)
- 2. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. OhshimaThe structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
- 3. Phys. Rev. B 75, 245202 (2007) , “Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC”, T. Umeda, J. Ishoya, T. Ohshima, N. Morishita, H. Itoh, and A. GaliAn antisite-vacancy pair and a monovacancy are a set of fundamental stable and/or metastable defects in compound semiconductors. Theory predicted that carbon antisite-vacancy pairs would be much more stable in p-type SiC than silicon vacancies and that they would be a common defect. However,... (Read more)
- 4. Phys. Rev. B 73, 161201(R) (2006) , “Thermally stable carbon-related centers in 6H-SiC: Photoluminescence spectra and microscopic models”, A. Mattausch, M. Bockstedte, O. Pankratov, J. W. Steeds, S. Furkert, J. M. Hayes, W. Sullivan, N. G. WrightRecent ab initio calculations [Mattausch et al., Phys. Rev. B 70, 235211 (2004)] of carbon clusters in SiC reveal a possible connection between the tricarbon antisite (C3)Si and the U photoluminescence center in 6H-SiC [Evans et al., Phys. Rev. B 66, 35204... (Read more)
- 5. Phys. Rev. Lett. 96, 55501 (2006) , “Divacancy in 4H-SiC”, N. T. Son, P. Carlsson, J. ul Hassan, E. Janz?n, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, H. ItohElectron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground... (Read more)
- 6. Phys. Rev. Lett. 96, 145501 (2006) , “Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC”, T. Umeda, N. T. Son, J. Isoya, E. Janzn, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. BockstedteThe metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC. (Read more)SiC| ENDOR EPR Theory electron-irradiation optical-spectroscopy thermal-meas./anneal-exp.| -1 -2 1.0eV~ 13C 29Si C1h C3v Carbon Csi EI5/6 HEI1 HEI5/6 Nitrogen P6/7 SI5 Silicon Vc antisite bistable/metastable dangling-bond n-type pair(=2) semi-insulating vacancy .inp files: SiC/SI5_C1h SiC/SI5_80K SiC/SI5_100K | last update: Takashi Fukushima
- 7. Phys. Rev. B 70, 245204 (2004) , “Silicon vacancy annealing and DI luminescence in 6H-SiC”, M. V. B. Pinheiro, E. Rauls, U. Gerstmann, S. Greulich-Weber, H. Overhof, and J.-M. SpaethCombining electron paramagnetic resonance measurements with ab initio calculations, we identify the VCCSi(SiCCSi) complex as a second annealing product of the silicon vacancy via an analysis of resolved carbon hyperfine interactions and of... (Read more)
- 8. Phys. Rev. B 68, 165206 (2003) , “EPR studies of the isolated negatively charged silicon vacancies in n-type 4H- and 6H-SiC: Identification of C3v symmetry and silicon sites”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, and J. IsoyaThe isolated negatively charged silicon vacancy (VSi-" align="middle">) in the hexagonal lattices of 4H- and 6H-SiC has been studied by electron paramagnetic resonance (EPR). The local structure was suggested to have Td symmetry from the... (Read more)
- 9. Phys. Rev. B 66, 235202 (2002) , “Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C3v symmetry in n-type 4H-SiC”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, J. IsoyaThe TV2a center, which was suggested to be the excited triplet state (S=1) of the neutral silicon vacancy related defect [S?rman et al., Phys. Rev. B 61, 2613 (2000)] in the electron-irradiated n-type 4H-SiC has been studied by continuous wave and pulsed electron paramagnetic resonance... (Read more)
- 10. Phys. Rev. B 66, 155214 (2002) , “Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC”, Mt. Wagner, N. Q. Thinh, N. T. Son, W. M. Chen, E. Janz?n, P. G. Baranov, E. N. Mokhov, C. Hallin, J. L. Lindstr?mThe silicon vacancy in its neutral charge state (VSi) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor... (Read more)
- 11. Phys. Rev. B 62, 10841 (2000) , “Vacancy defects in p-type 6H-SiC created by low-energy electron irradiation”, H. J. von Bardeleben, J. L. Cantin, L. Henry, M. F. BartheThe intrinsic defects in p-type 6H-SiC:Al generated by electron irradiation at 300 keV, which is close to the threshold of the silicon atom displacement, have been studied by electron paramagnetic resonance spectroscopy. We observed two dominant irradiation-induced paramagnetic defects:?(i) a... (Read more)
- 12. Phys. Rev. B 61, 12939 (2000) , “Dimer of Substitutional Carbon in Silicon Studied by EPR and ab initio Methods”, J. R. Byberg, B. Bech Nielsen, M. Fanciulli, S. K. Estreicher, P. A. Fedders.An EPR signal observed in carbon-doped float-zone silicon after irradiation with 2-MeV electrons at room temperature has been investigated. It represents a defect with S=1/2, an apparently isotropic g factor (=2.0030), and a complicated hyperfine structure from 29Si nuclei in five shells... (Read more)
- 13. Phys. Rev. B 59, 12900 (1999) , “Electron-paramagnetic-resonance measurements on the divacancy defect center R4/W6 in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. BanholzerElectron-paramagnetic-resonance (EPR) studies in radiation damaged diamond enriched to 5% 13C have resulted in the identification of the nearest-neighbor divacancy center. It is the isotopic enrichment, and consequent observation of 13C hyperfine lines, that has permitted the... (Read more)
- 14. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 15. Phys. Rev. B 42, 5765 (1990) , “Bistable interstitial-carbonsubstitutional-carbon pair in silicon”, L. W. Song, X. D. Zhan, B. W. Benson, and G. D. WatkinsA bistable interstitial-carbon?substitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon ??molecule??... (Read more)
- 16. Phys. Rev. Lett. 60, 460 (1988) , “Bistable Defect in Silicon: The Interstitial-Carbon-Substitutional-Carbon Pair”, L. W. Song, X. D. Zhan, B. W. Benson, G. D. Watkins.By combining several spectroscopic techniques, we have observed a new type of bistable center in electron-irradiated silicon and have identified it as an interstitial-carbon?substitutional-carbon pair. The positive and negative charge states of the defect share a common stable configuration which... (Read more)
- 17. Phys. Rev. Lett. 36, 1329 (1976) , “EPR Observation of the Isolated Interstitial Carbon Atom in Silicon ”, G. D. Watkins and K. L. BrowerAn EPR spectrum, labeled Si-G12, is identified as arising from an isolated interstitial carbon atom in silicon. A ?100? C-Si interstitialcy model is suggested for the defect in which a silicon and carbon atom pair partially share single substitutional site. Because carbon is isoelectronic with... (Read more)
- 18. Phys. Rev. B 9, 2607 (1974) , “EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon”, K. L. Brower.An electron-paramagnetic-resonance (EPR) study of irradiated, p-type silicon doped with carbon enriched with 13C has revealed that the Si-G?11 spectrum possesses a 13C hyperfine structure. Owing to the complexity and lack of resolution in the observed spectrum, we found it... (Read more)
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