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- 1. J. Appl. Phys. 87, 3800 (2000) , “Photothermal ionization spectroscopy of shallow nitrogen donor states in 4H–SiC”, C. Q. Chen, J. Zeman, F. Engelbrecht, C. Peppermüller, R. Helbig, Z. H. Chen, G. MartinezPhotothermal ionization spectroscopy (PTIS) measurements were carried out on a free-standing, high purity and high quality 4HSiC epitaxial layer at various temperatures. The two step photothermal ionization process is clearly reflected in the temperature dependence of the photoconductivity.... (Read more)
- 2. Jpn. J. Appl. Phys. 34, 5483-5488 (1995) , “Effects of Grown-in Hydrogen on Lifetime of Czochralski Silicon Crystals ”, Akito HaraI studied the effects of grown-in hydrogen on the lifetime of Czochralski-grown silicon crystals. It was found that grown-in hydrogen degraded the electrical properties of Czochralski-grown silicon crystals by enhancing the formation of recombination centers, which had a high thermal stability... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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