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- 1. Appl. Phys. Lett. 89, 211114 (2006) , “Site selective studies of Er3+ emission centers in Er-implanted 6H-SiC”, V. Glukhanyuk and A. KozaneckiIn this work the high resolution site selective photoluminescence (PL) using Fourier transform spectrometer and PL excitation spectra near 1.54 µm in Er-implanted 6H-SiC were investigated. Direct evidence for the existence of three different Er3+ emitting centers... (Read more)
- 2. Appl. Phys. Lett. 88, 191904 (2006) , “Luminescence from Nd- and Dy-ion-implanted 4H–SiC”, Shinji Kawai, Takayoshi Masaki, Yoshimine Kato, and Teruaki MotookaCathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4HSiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after... (Read more)
- 3. J. Appl. Phys. 100, 083106 (2006) , “Photoluminescence of Tb3+ doped SiNx films grown by plasma-enhanced chemical vapor deposition”, Zhizhong Yuan, Dongsheng Li, Minghua Wang, Peiliang Chen, Daoren Gong, Lei Wang, and Deren YangRoom temperature photoluminescence (PL) properties of the Tb3+ ion implanted nonstoichiometric silicon nitride (Tb3+:SiNx) and silicon dioxide (Tb3+:SiOx) were studied. The films were deposited by plasma-enhanced chemical vapor... (Read more)
- 4. J. Appl. Phys. 100, 034318 (2006) , “Electric-field-induced quenching of photoluminescence in photoconductive organic thin film structures based on Eu3+ complexes”, J. Kalinowski, W. Stampor, M. Cocchi, D. Virgili, and V. FattoriA large electric field effect on photoluminescence (PL) from electroluminescent emitters sandwiched between two high-work-function electrodes is reported and a model of the effect formulated. We examine the PL behavior of Eu3+ complex-based organic thin films subjected to increasing... (Read more)
- 5. Phys. Rev. B 74, 155310 (2006) , “Optical study of excitation and deexcitation of Tm in GaN quantum dots”, Thomas Andreev, Nguyen Quang Liem, Yuji Hori, Mitsuhiro Tanaka, Osamu Oda, Daniel Le Si Dang, Bruno Daudin, and Bruno GayralWe report on the optical properties of molecular beam epitaxy grown GaN quantum dots (QDs) doped with Tm. Under optical excitation above the fundamental energy of GaN QDs, the fundamental transition emission from the GaN QD host was not observed while bright emission from Tm3+ manifolds... (Read more)
- 6. J. Vac. Sci. Technol. B 22, 120-125 (2004) , “Properties of Fe-doped semi-insulating GaN structures”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, S. J. PeartonThe properties of semi-insulating GaN films with the lower part of the film doped with Fe are reported. The 300 K sheet resistivity of the films was 2×1010 /square with an activation energy of the dark conductivity of 0.5 eV. The Fermi level is also pinned at... (Read more)
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Updated at 2010-07-20 16:50:39
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