ROADMAP, EPRFD, EULER, ECHO, PRPROPAR, PLOT=1,
FREQ=9457.0, AUTONUC, NN=0, NSITE=6

Label:Vsi-(I) (Main)
Author:N. Mizuochi
Reference:N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, and J. Isoya, Physical Review B, v. 68, n. 16, 165206 (2003).
Origin: Vsi-(h), Negatively charged Si vacancy at hexagonal site in 4H-SiC, C3v point group
Sample:SiC (3 MeV e-iradiated)
Symmetry:C3v
Temperature
Coordinate:x=[-1100],y=[11-20],z=[0001]
RelativeIntensity:1
OtherRemarks
version:8
date:2006/01/09 17:29:32
ReferenceFirstAuthor:N. Mizuochi
ReferenceYear:2003
ReferenceYearShort:03
upload date:2006/01/09 17:29:32
gx:2.00280
gy:2.00280
gz:2.00280
Dx:0.00
Dy:0.00
Dz:0.00

1.5

2.0028 2.0028 2.0028
0 0 0

0 0 0
0 0 0

1, 1

1	0	0
0	1	0
0	0	1

-0.5	-0.866025	0
0.866025	-0.5	0
0	0	1

-0.5	0.866025	0
-0.866025	-0.5	0
0	0	1

-1	0	0
0	-1	0
0	0	1

0.5	0.866025	0
-0.866025	0.5	0
0	0	1

0.5	-0.866025	0
0.866025	0.5	0
0	0	1

90.0,	90.0,	0.0,	0.0
0.0,	90.0,	2.0

1
1,  2

1
1,  2

1
1,  2

1
1,  2

1
1,  2

1
1,  2