ROADMAP, ECHO, PRTPROPAR, PLOT=1
EPRFD, FREQ=9452, AUTONUC, NN=0,
NSITE=6, NPLANE=1

Label:HEI9a(g)
Author:T. Umeda
Reference:T. Umeda, J. Isoya, T. Ohshima, N. Morishita, H. Itoh, A. Gali, Phys. Rev. B 75, 245202 (2007).
Origin:Csi-Vc(+)(hh) c-axial pair
Sample:p-type 4H-SiC (e-iiradiated with 2e18 e/cm2 at 800 degC)
Symmetry:C3v
Temperature:R.T.
Coordinate:x=[11-20],y=[-1100],z=[0001]
OtherRemarks:showing strong microwave saturation effect(very long spin relaxation time);electronic level similar to Vc(+)
RelativeIntensity:1
version:6
date:2007/08/07 16:35:34
upload date:2006/05/29 18:03:24
ReferenceFirstAuthor:T. Umeda
ReferenceYear:2007
ReferenceYearShort:07
gx:2.00408
gy:2.00408
gz:2.00227

0.5

2.00408	0	0
	2.00408	0
		2.00227

1	0	0
0	1	0
0	0	1

-0.5	-0.866025	0
0.866025	-0.5	0
0	0	1

-0.5	0.866025	0
-0.866025	-0.5	0
0	0	1

-1	0	0
0	-1	0
0	0	1

0.5	0.866025	0
-0.866025	0.5	0
0	0	1

0.5	-0.866025	0
0.866025	0.5	0
0	0	1

90.0,	0.0,	0.0,	0.0
0.0,	90.0,	2.0

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2