ROADMAP, EPRFD, EULER, ECHO, PRTPROPAR, PLOT=1,
FREQ=9452, AUTONUC, NN=1, NSITE=6

Label:HEI6(Si1)
Author:T. Umeda
Reference:T. Umeda, J. Isoya, N. Morishita, T. Ohshima, E. Janzen, A. Gali, Phys. Rev. B in press.
Origin:dicarbon antisite(-)(h)
Sample:e-irradiated n-type 4H-SiC (3 MeV, with 2e18 e/cm2 at 800 degC) in dark
Symmetry:C1h
Temperature:200K
Coordinate:x=[11-20],y=[-1100],z=[0001]
OtherRemarks:29Si hyperfine structure of symmetrically-related two Si(I) atoms at NN sites of dicarbon antisite (temperature dependent).
RelativeIntensity:0.0934
ReferenceFirstAuthor:T. Umeda
version:3
date:2009/02/18 17:16:57
upload date:2009/02/18 16:10:43
gx:2.00239
gy:2.00185
gz:2.00175
Ax:32.56
Ay:27.48
Az:27.48

0.5
si29


2.0017516973         .0000000000         .0000000000
                     2.0021965482        -.0002609343
                                         2.0020492145

30.3110483156        2.2332978216        1.1718403033
                    29.2414183301         .9243485588
                                         27.9648089061

0, 0

1	0	0
0	1	0
0	0	1

-0.5	-0.866025	0
0.866025	-0.5	0
0	0	1

-0.5	0.866025	0
-0.866025	-0.5	0
0	0	1

-1	0	0
0	-1	0
0	0	1

0.5	0.866025	0
-0.866025	0.5	0
0	0	1

0.5	-0.866025	0
0.866025	0.5	0
0	0	1

90.0,	90.0,	0.0,	0.0
0.0,	90.0,	2.0

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4