ROADMAP, EPRFD, EULER, ECHO, PRTPROPAR, PLOT=1,
FREQ=9452.0, AUTONUC, NN=0, NSITE=6

Label:HEI2(g)
Author:T. Umeda
Reference:T. Umeda, Y. Ishitsuka, J. Isoya, N. T. Son, E. Janzen, N. Morishita, T. Ohshima, H. Itoh, A. Gali, submitted.
Origin:secondary defect?
Sample:n-type 4H-SiC (e-iiradiated with 2e18 e/cm2 at 850 degC)
Symmetry:C1h
Temperature:30-65K
Coordinate:x=[11-20],y=[-1100],z=[0001]
RelativeIntensity:1
OtherRemarks
version:5
date:2008/05/02 20:10:32
ReferenceFirstAuthor:T. Umeda
upload date:2008/05/02 20:10:32
gx:2.00778
gy:2.00778
gz:2.00148

0.5

2.0077757242         .0000000000         .0000000000
                            2.0077757242         .0000000000
                                                2.0014763530

0

1	0	0
0	1	0
0	0	1

-0.5	-0.866025	0
0.866025	-0.5	0
0	0	1

-0.5	0.866025	0
-0.866025	-0.5	0
0	0	1

-1	0	0
0	-1	0
0	0	1

0.5	0.866025	0
-0.866025	0.5	0
0	0	1

0.5	-0.866025	0
0.866025	0.5	0
0	0	1


90.0,	180.0,	0.0,	0.0
0.0,	90.0,	2.0

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2