ROADMAP, EPRFD, EULER, ECHO, PRTPROPAR, PLOT=1,
FREQ=9452, AUTONUC, NN=0, NSITE=6

Label:HEI10b(g)
Author:T. Umeda
Reference:T. Umeda, J. Isoya, T. Ohshima, N. Morishita, H. Itoh, A. Gali, Phys. Rev. B 75, 245202 (2007).
Origin:Csi-Vc(+)(hk)basal pair
Sample:p-type 4H-SiC (e-iiradiated with 2e18 e/cm2 at 800 degC)
Symmetry:C1h
Temperature:R.T.
Coordinate:x=[11-20],y=[-1100],z=[0001]
OtherRemarks:same as HEI11;showing strong microwave saturation effect;electronic level similar to Vc(+)
RelativeIntensity:1
ReferenceFirstAuthor:T. Umeda
ReferenceYear:2007
ReferenceYearShort:07
version:6
date:2007/08/07 16:36:59
upload date:2006/10/02 22:48:08
gx
gy:2.00289
gz:2.00373

0.5

2.0034499014    3.1580084416E-10   -1.5642040822E-10
                 2.0028869025        -.0005300139
                                      2.0037342895

0

1	0	0
0	1	0
0	0	1

-0.5	-0.866025	0
0.866025	-0.5	0
0	0	1

-0.5	0.866025	0
-0.866025	-0.5	0
0	0	1

-1	0	0
0	-1	0
0	0	1

0.5	0.866025	0
-0.866025	0.5	0
0	0	1

0.5	-0.866025	0
0.866025	0.5	0
0	0	1

90.0,	180.0,	0.0,	0.0
0.0,	90.0,	2.0

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2