ROADMAP, ECHO, PRPROPAR, PLTFMT=1, GRAIN=4
EPRFD, FREQ=9452, NN=0,
NSITE=6, NPLANE=1, EULER=1

Label:HEI10a(g)
Author:T. Umeda
Reference:T. Umeda, J. Isoya, T. Ohshima, N. Morishita, H. Itoh, A. Gali, Phys. Rev. B 75, 245202 (2007).
Origin:Csi-Vc(+)(kh) basal pair
Sample:p-type 4H-SiC (e-iiradiated with 2e18 e/cm2 at 800 degC)
Symmetry:C1h
Temperature:R.T.
Coordinate:x=[11-20],y=[-1100],z=[0001]
OtherRemarks:showing strong microwave saturation effect;electronic level similar to Vc(+)
RelativeIntensity:1
ReferenceFirstAuthor:T. Umeda
ReferenceYear:2007
ReferenceYearShort:07
version:7
date:2007/08/07 16:37:57
upload date:2006/10/02 22:48:08
gx:2.00348
gy:2.00247
gz:2.00237

0.5

2.00348	2.00258	2.00226
0	145	0

1

1	0	0
0	1	0
0	0	1

-0.5	-0.866025	0
0.866025	-0.5	0
0	0	1

-0.5	0.866025	0
-0.866025	-0.5	0
0	0	1

-1	0	0
0	-1	0
0	0	1

0.5	0.866025	0
-0.866025	0.5	0
0	0	1

0.5	-0.866025	0
0.866025	0.5	0
0	0	1

90.0,	180.0,	0.0,	0.0
0.0,	90.0,	2.0

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2