ROADMAP, EPRFD, EULER, ECHO, PRTPROPAR, PLOT=1,
FREQ=9452.0, AUTONUC, NN=1, NSITE=6

Label:EI6(si2-4)
Author:T. Umeda
Reference:T. Umeda, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya, Phys. Rev. B 69, R121201 (2004)
Origin:Vc+(h)
Sample:p-type 4H-SiC (e-iiradiated with 2e18 e/cm2 at 850 degC)
Symmetry:C3v
Temperature:50K
Coordinate:x=[11-20],y=[-1100],z=[0001]
RelativeIntensity:0.1401
OtherRemarks
version:2
date:2004/12/07 14:06:02
ReferenceFirstAuthor:T. Umeda
ReferenceYear:2004
ReferenceYearShort:04
gx:2.00489
gy:2.00489
gz:2.00279
Ax:25.75
Ay:17.23
Az:17.11

0.5
si29

2.00489	0.0	0.0
 	2.00489	0.0
 	 	2.00279

17.23	-0.00000012	0.00000030
 	25.435	1.6199
 	 	17.429

0, 0

1	0	0
0	1	0
0	0	1

-0.5	-0.866025	0
0.866025	-0.5	0
0	0	1

-0.5	0.866025	0
-0.866025	-0.5	0
0	0	1

-1	0	0
0	-1	0
0	0	1

0.5	0.866025	0
-0.866025	0.5	0
0	0	1

0.5	-0.866025	0
0.866025	0.5	0
0	0	1

90.0	90	0.0	0.0
0.0	90.0	2.0

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4