ROADMAP, EPRFD, EULER, ECHO, PRTPROPAR, PLOT=1,
FREQ=9452.0, AUTONUC, NN=1, NSITE=6

Label:EI6(Si2-4)
Author:T. Umeda
Reference:T. Umeda, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya, Phys. Rev. B 69, R121201 (2004)
Origin:Vc+(h)
Sample:p-type 4H-SiC (e-iiradiated with 2e18 e/cm2 at 850 degC)
Symmetry:C3v
Temperature:150K
Coordinate:x=[11-20],y=[-1100],z=[0001]
RelativeIntensity:0.1401
OtherRemarks
version:3
date:2004/12/07 14:04:58
ReferenceFirstAuthor:T. Umeda
ReferenceYear:2004
ReferenceYearShort:04
gx:2.00472
gy:2.00472
gz:2.00305
Ax:29.72
Ay:20.18
Az:20.09

0.5
Si29

2.00472	0.0	0.0
	2.00472	0.0
		2.00305

20.18	0.0000044	0.0000012
 	29.26	2.0569
 	 	20.55

0, 0

1	0	0
0	1	0
0	0	1

-0.5	-0.866025	0
0.866025	-0.5	0
0	0	1

-0.5	0.866025	0
-0.866025	-0.5	0
0	0	1

-1	0	0
0	-1	0
0	0	1

0.5	0.866025	0
-0.866025	0.5	0
0	0	1

0.5	-0.866025	0
0.866025	0.5	0
0	0	1

90.0	90	0.0	0.0
0.0	90.0	2.0

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4

2
2,	3
1,	4