ROADMAP, EPRFD, EULER, ECHO, PRTPROPAR, PLOT=1
FREQ=9452.0, AUTONUC, NN=0, NSITE=12

Label:G2(g)
Author:T. Umeda
Reference:G.D. Watkins, Radiation Damage in Semiconductors, Paris: Dunod p.97 1965.
Origin:V-
Sample:in-situ e-irradiation to n-type Si
Symmetry:Orthorhombic-I(C2v)
Temperature:20K
Coordinate:x=[100],y=[011],z=[0-11]
RelativeIntensity:1
OtherRemarks:very unstable(disappeared by 15min annealing at 60K)
ReferenceFirstAuthor:G.D. Watkins
version:2
date:2004/12/23 01:46:53
ReferenceYear:1965
ReferenceYearShort:65
gx:2.01510
gy:2.00380
gz:2.00280

0.5

2.0038	2.0151	2.0028
0	0	0

1


1	0	0
0	1	0
0	0	1

-1	0	0
0	0	-1
0	-1	0

1	0	0
0	-1	0
0	0	-1

-1	0	0
0	0	1
0	1	0

0		-0.707107	0.707107
0.707107	-0.5		-0.5
0.707107	0.5		0.5

0		0.707107	-0.707107
-0.707107	-0.5		-0.5
-0.707107	0.5		0.5

0		-0.707107	0.707107
-0.707107	0.5		0.5
-0.707107	-0.5		-0.5

0		0.707107	-0.707107
0.707107	0.5		0.5
0.707107	-0.5		-0.5

0		0.707107	0.707107
-0.707107	-0.5		0.5
0.707107	-0.5		0.5

0		-0.707107	-0.707107
0.707107	-0.5		0.5
-0.707107	-0.5		0.5

0		-0.707107	-0.707107
-0.707107	0.5		-0.5
0.707107	0.5		-0.5

0		0.707107	0.707107
0.707107	0.5		-0.5
-0.707107	0.5		-0.5

0.0,	0.0,	90.0,	0.0
0.0,	90.0,	2.0

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2