ROADMAP, EPRFD, ECHO, PRTPROPAR, EULER, PLOT=1
FREQ=20090, AUTONUC, NN=0, NSITE=4

Label:Pb1(g)
Author:T. Umeda
Reference:A. Stesmans, V.V. Afanas'ev, J. Appl. Phys. 83, 2449 (1998);A. Stesmans, B. Nouwen, V.V. Afanas'ev, Phys. Rev. B 58, 15801 (1998).
Origin:Si dangling bond at Si(100)-SiO2 interfaces
Sample:thermally-grown SiO2(38-130nm) on p-type Si(100) with a volume of 2x9mm2x80um, with edge treatments
Symmetry:Monoclinic-I
Temperature:1.6-4.3K
Coordinate:x=[100],y=[011],z=[0-11]
RelativeIntensity:1
OtherRemarks:<211>-oriented Si dangling bond center at Si(100)-SiO2 interfaces. Only 4 rotation matrices were included. 29Si hyperfine interactions have been also fully analyzed.
ReferenceFirstAuthor:A. Stesmans
ReferenceYear:1998
ReferenceYearShort:98
version:18
date:2010/05/31 13:28:08
upload date:2010/05/31 12:43:36
gx:2.00392
gy:2.00563
gz:2.00577

0.5

2.00735	2.00220	2.00577
-54.7	0	0

1

1	0	0
0	1	0
0	0	1

-1	0	0
0	0	-1
0	-1	0

1	0	0
0	-1	0
0	0	-1

-1	0	0
0	0	1
0	1	0

0.0,	0.0,	90.0,	0.0
0.0,	90.0,	2.0

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2

1
1,	2