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- 1. J. Appl. Phys. 102, 103514 (2007) , AIP , “Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies”, A. K. Mishra, S. K. Chaudhuri, S. Mukherjee, A. Priyam, A. Saha, and D. DasDefects present in ZnO nanocrystals prepared by a wet chemical method have been characterized by photoluminescence (PL) and positron annihilation spectroscopy (PAS) techniques. The as-prepared sample was heat treated at different temperatures to obtain nanocrystals in the size range of 19–39 ... (Read more)
- 2. J. Appl. Phys. 101, 024324 (2007) , “Electron paramagnetic resonance in transition metal-doped ZnO nanowires”, A. O. Ankiewicz, M. C. Carmo, N. A. Sobolev, W. Gehlhoff, E. M. Kaidashev, A. Rahm, M. Lorenz, and M. GrundmannThe wide-band-gap zinc oxide-based diluted magnetic semiconductors currently attract considerable attention due to their possible use in spintronic devices. In this work, we studied ZnO nanowire samples synthesized on 10×10 mm2 a-plane sapphire substrates by high-pressure... (Read more)
- 3. J. Appl. Phys. 101, 013902 (2007) , “An electron paramagnetic resonance study of n-type Zn1−xMnxO: A diluted magnetic semiconductor”, A. Ben Mahmoud, H. J. von Bardeleben, J. L. Cantin, E. Chikoidze, and A. MaugerWe present the results of an electron paramagnetic resonance study of homogeneous single phase Zn1−xMnxO thin films with Mn concentrations varying between x=0.07 and x=0.34. Our results show antiferromagnetic (AF) coupling in the entire... (Read more)
- 4. Phys. Rev. B 75, 195215 (2007) , “Effect of Co and O defects on the magnetism in Co-doped ZnO: Experiment and theory”, G. S. Chang, E. Z. Kurmaev, D. W. Boukhvalov, L. D. Finkelstein, S. Colis, T. M. Pedersen, A. Moewes, and A. DiniaThe electronic structure of Zn1−xCoxO (x=0.02, 0.06, and 0.10) diluted magnetic semiconductors is investigated using soft x-ray emission spectroscopy and first-principles calculations. X-ray absorption and emission measurements reveal that most Co... (Read more)
- 5. Phys. Rev. B 75, 144404 (2007) , “Ferromagnetism in Fe-doped ZnO nanocrystals: Experiment and theory”, Debjani Karmakar, S. K. Mandal, R. M. Kadam, P. L. Paulose, A. K. Rajarajan, T. K. Nath, A. K. Das, I. Dasgupta, and G. P. DasFe-doped ZnO nanocrystals are successfully synthesized and structurally characterized by using x-ray diffraction and transmission electron microscopy. Magnetization measurements on the same system reveal a ferromagnetic to paramagnetic transition temperature above 450 K with a low-temperature... (Read more)
- 6. Phys. Rev. B 75, 085204 (2007) , “Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors”, Bernard Gil, Pierre Bigenwald, Mathieu Leroux, Plamen P. Paskov, and Bo MonemarWe calculate the fine structure splitting of the near band edge donor-bound excitons in major cubic semiconductors using an approach inspired by an earlier one that consists in replacing the Morse potential by a Kratzer one, in order to account for the repulsion between the donor and the hole. A... (Read more)
- 7. Phys. Rev. Lett. 98, 186804 (2007) , “Room-Temperature Electron Spin Dynamics in Free-Standing ZnO Quantum Dots”, William K. Liu, Kelly M. Whitaker, Alyssa L. Smith, Kevin R. Kittilstved, Bruce H. Robinson, and Daniel R. GamelinConduction band electrons in colloidal ZnO quantum dots have been prepared photochemically and examined by electron paramagnetic resonance spectroscopy. Nanocrystals of 4.6 nm diameter containing single S-shell conduction band electrons have g*=1.962 and a room-temperature... (Read more)
- 8. Phys. Rev. Lett. 98, 135506 (2007) , “Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors”, Yanfa Yan, Jingbo Li, Su-Huai Wei, and M. M. Al-JassimThe asymmetry doping problem has severely hindered the potential applications of many wideband gap (WBG) materials. Here, we propose a possible approach to overcome this long-standing doping asymmetry problem for WBG semiconductors. Our approach is based on the reduction of the ionization energies... (Read more)
- 9. Phys. Rev. Lett. 98, 045501 (2007) , “Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides”, Stephan Lany and Alex ZungerExisting defect models for In2O3 and ZnO are inconclusive about the origin of conductivity, nonstoichiometry, and coloration. We apply systematic corrections to first-principles calculated formation energies ΔH, and validate our theoretical defect model against... (Read more)
- 10. Appl. Phys. Lett. 89, 262112 (2006) , “Identification of oxygen and zinc vacancy optical signals in ZnO”, T. Moe Børseth, B. G. Svensson, A. Yu. Kuznetsov, P. Klason, Q. X. Zhao, and M. WillanderPhotoluminescence spectroscopy has been used to study single crystalline ZnO samples systematically annealed in inert, Zn-rich and O-rich atmospheres. A striking correlation is observed between the choice of annealing ambient and the position of the deep band emission (DBE) often detected in ZnO. In... (Read more)
- 11. Appl. Phys. Lett. 89, 252115 (2006) , “Doping and defects in the formation of single-crystal ZnO nanodisks”, Junjie Qi, Yue Zhang, Yunhua Huang, Qingliang Liao, and Juan LiuHigh purity growth of polar surface dominated ZnO nanodisks was fabricated by introducing In ions in the raw material by thermal evaporation process without a catalyst. The nature of the sharp-contrast lines in the disks was investigated. The results suggested that the existence of sharp-contrast... (Read more)
- 12. Appl. Phys. Lett. 89, 112113 (2006) , “Control of p- and n-type conductivities in Li-doped ZnO thin films”, J. G. Lu, Y. Z. Zhang, Z. Z. Ye, Y. J. Zeng, H. P. He, L. P. Zhu, J. Y. Huang, L. Wang, J. Yuan, B. H. Zhao, and X. H. LiLi-doped ZnO films were prepared by pulsed laser deposition. The carrier type could be controlled by adjusting the growth conditions. In an ionized oxygen atmosphere, p-type ZnO was achieved, with the hole concentration of 6.04×1017 cm3 at an optimal Li... (Read more)
- 13. Appl. Phys. Lett. 89, 092122 (2006) , “Deep acceptor states in ZnO single crystals”, H. von Wenckstern, R. Pickenhain, H. Schmidt, M. Brandt, G. Biehne, M. Lorenz, M. Grundmann, and G. BrauerThe authors report the observation of both acceptor- and donorlike defects in ZnO by deep level transient spectroscopy. The observation is facilitated by using a p-n junction allowing the injection of holes and electrons. The junction is realized by implanting a n-conducting ZnO... (Read more)
- 14. Appl. Phys. Lett. 89, 082102 (2006) , “Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO”, V. A. Coleman, J. E. Bradby, C. Jagadish, and M. R. PhillipsThe influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of... (Read more)
- 15. Appl. Phys. Lett. 89, 042106 (2006) , “Identification of acceptor states in Li-doped p-type ZnO thin films”, Y. J. Zeng, Z. Z. Ye, J. G. Lu, W. Z. Xu, L. P. Zhu, B. H. Zhao, and Sukit LimpijumnongWe investigate photoluminescence from reproducible Li-doped p-type ZnO thin films prepared by dc reactive magnetron sputtering. The LiZn acceptor state, with an energy level located at 150 meV above the valence band maximum, is identified from free-to-neutral-acceptor transitions.... (Read more)
- 16. Appl. Phys. Lett. 89, 031902 (2006) , “Anti-Stokes photoluminescence in ZnO microcrystal”, Weitao Cao, Weimin Du, Fuhai Su, and Guohua LiLow temperature (10 K) strong anti-Stokes photoluminescence (ASPL) of ZnO microcrystal excited by low power cw 532 nm laser is reported here. Energy upconversion of 1.1 eV is obtained in our experiment with no conventional nonlinear effect. Through the study of the normal photoluminescence and... (Read more)
- 17. Appl. Phys. Lett. 89, 012508 (2006) , “Ferromagnetism in Fe-implanted a-plane ZnO films”, P. Wu, G. Saraf, Y. Lu, D. H. Hill, R. Gateau, L. Wielunski, R. A. Bartynski, D. A. Arena, J. Dvorak, A. Moodenbaugh, T. Siegrist, J. A. Raley, and Yung Kee YeoFe ions of dose 5×1016 cm2 were implanted at 200 keV into a-plane ZnO epitaxial films. The epitaxial quality of the postannealed samples was verified by x-ray diffraction -rocking curves and scans, whereas x-ray absorption spectroscopy identified the... (Read more)
- 18. Appl. Phys. Lett. 88, 242508 (2006) , “Thermal limits on field alignment of nanoparticle FePt media”, J. A. Bain, W. F. Egelhoff, Jr.We derive a simple expression for the average angular orientation distribution of ferromagnetic FePt particles in an applied field in thermal equilibrium. This system is closely related to the Langevin expression for paramagnetic susceptibility, which computes the average orientation of particles in... (Read more)
- 19. Appl. Phys. Lett. 88, 201918 (2006) , “Diffusion of zinc vacancies and interstitials in zinc oxide”, Paul Erhart and Karsten AlbeThe self-diffusion coefficient of zinc in ZnO is derived as a function of the chemical potential and Fermi level from first-principles calculations. Density functional calculations in combination with the climbing image-nudged elastic band method are used in order to determine migration barriers for... (Read more)
- 20. Appl. Phys. Lett. 88, 152116 (2006) , “Donor and acceptor competitions in phosphorus-doped ZnO”, F. X. Xiu, Z. Yang, L. J. Mandalapu, and J. L. LiuPhosphorus-doped ZnO films were grown by molecular-beam epitaxy with a GaP effusion cell as dopant source. Three growth regions were identified to obtain ZnO films with different conduction types. In the oxygen-extremely-rich region, phosphorus-doped ZnO films show n-type conduction with... (Read more)
- 21. Appl. Phys. Lett. 88, 141919 (2006) , “Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals”, D. C. Reynolds, C. W. Litton, T. C. Collins, J. E. Hoelscher, J. NauseDonor-acceptor (D-A) pair spectra have been observed in the photoluminescence radiative recombination of selected donor bound exciton complexes in zinc oxide (ZnO) single crystals that have been ion implantation doped with H and Zn atoms and subsequently annealed in a nitrogen (N2)... (Read more)
- 22. J. Appl. Phys. 99, 123515 (2006) , “Raman spectroscopy of (Mn, Co)-codoped ZnO films”, C. L. Du, Z. B. Gu, M. H. Lu, J. Wang, S. T. Zhang, J. Zhao, G. X. Cheng, H. Heng, and Y. F. ChenRaman spectra of (Mn, Co)-codoped ZnO films were investigated as functions of laser line and temperature. It is shown that the Raman shifts for different phonon modes exhibit redshift with temperature increasing, which can be attributed to the anharmonic effect in the material. Strong resonant Raman... (Read more)
- 23. J. Appl. Phys. 99, 103905 (2006) , “Effect of Mn+ ion implantation on the Raman spectra of ZnO”, Hongmei Zhong, Jinbing Wang, Xiaoshuang Chen, Zhifeng Li, Wenlan Xu, and Wei LuRaman measurements have been performed on ZnO bulk materials implanted with 220 keV Mn+ ions with various doses from 1015 to 1017 cm2. The results reveal two modes at about 230 and 523 cm1, respectively, which are not observed in... (Read more)
- 24. J. Appl. Phys. 99, 093507 (2006) , “Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion species”, Z. Q. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. NaramotoZnO single crystals implanted with O+ and B+ ions were studied by positron annihilation and Raman scattering measurements. Positron annihilation results show that vacancy clusters are generated by implantation. For the B+-implanted sample, the vacancy clusters have a... (Read more)
- 25. J. Appl. Phys. 99, 093505 (2006) , “Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects”, S. F. Chichibu, T. Onuma, M. Kubota, A. Uedono, T. Sota, A. Tsukazaki, A. Ohtomo, and M. KawasakiThe internal quantum efficiency (int) of the near-band-edge (NBE) excitonic photoluminescence (PL) in ZnO epilayers was significantly improved by eliminating point defects, as well as by the use of ZnO high-temperature-annealed self-buffer layer (HITAB) on a ScAlMgO4 substrate... (Read more)
- 26. J. Appl. Phys. 99, 066102 (2006) , “Photoluminescence of wurtzite ZnO under hydrostatic pressure”, S. J. Chen, Y. C. Liu, C. L. Shao, C. S. Xu, Y. X. Liu, L. Wang, B. B. Liu, and G. T. ZouPhotoluminescence (PL) spectra of single-crystal ZnO bulk under hydrostatic pressure are studied using the diamond-anvil-cell technique at room temperature. The PL spectrum of ZnO single crystal taken at atmospheric pressure was dominated by a strong near-band-edge exciton emission. The emission... (Read more)
- 27. J. Appl. Phys. 99, 063709 (2006) , “Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates”, X. Q. Zhang, Z. G. Yao, S. H. Huang, Ikuo Suemune, and H. KumanoHigh-quality ZnO thin films have been grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. Free-exciton absorption and exciton-LO phonon absorption peaks are observed in the films at room temperature, indicating that the exciton states are stable even at room temperature. Three... (Read more)
- 28. J. Appl. Phys. 99, 053516 (2006) , “Correlation between Zn vacancies and photoluminescence emission in ZnO films”, A. Zubiaga, J. A. García, F. Plazaola, F. Tuomisto, K. Saarinen, J. Zuñiga Pérez, and V. Muñoz-SanjoséPhotoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying... (Read more)
- 29. J. Appl. Phys. 99, 013502 (2006) , “Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy”, Y. S. Jung, W. K. Choi, O. V. Kononenko, and G. N. PaninLuminescence properties of ZnO films, which have been epitaxially grown on c-sapphire (0001) substrates by plasma-assisted molecular beam epitaxy, are investigated by means of different excitation sources and their measurement conditions. With the increase of measurement temperature,... (Read more)
- 30. J. Phys. Chem. Solids 67, 789 (2006) , “Spectroscopic and magnetic studies of manganese ions in ZnO–Sb2O3–B2O3 glass system”, M. Srinivasa Reddy, G. Murali Krishna , N. VeeraiahZnO–Sb2O3–B2O3 glasses containing different concentrations of MnO ranging from 0 to 1.0 mol% were prepared. A number of studies, viz. optical absorption, infrared and ESR spectra and magnetic susceptibility, were carried out as a function of manganese ion concentration. The analysis of... (Read more)
- 31. Phys. Rev. B 74, 235208 (2006) , “Theoretical study of the magnetism of Mn-doped ZnO with and without defects”, D. Iuan, B. Sanyal, and O. ErikssonWe calculate the exchange interaction parameters of a classical Heisenberg Hamiltonian for Mn-doped ZnO (Mn concentration between 5% and 20%) by an ab initio Korringa-Kohn-Rostoker coherent-potential-approximation method in the framework of density functional theory. A weak antiferromagnetic... (Read more)
- 32. Phys. Rev. B 74, 165203 (2006) , “Isotopic-mass dependence of the A, B, and C excitonic band gaps in ZnO at low temperatures”, S. Tsoi, X. Lu, A. K. Ramdas, H. Alawadhi, M. Grimsditch, M. Cardona, and R. LauckLow temperature wavelength-modulated reflectivity measurements of isotopically engineered ZnO samples have yielded the dependence of their A, B, and C excitonic band gaps on the isotopic masses of Zn and O. The observed dependence is analyzed in terms of the band gap renormalization by zero-point... (Read more)
- 33. Phys. Rev. B 74, 161202 (2006) , “Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO”, T. Moe Børseth, F. Tuomisto, J. S. Christensen, W. Skorupa, E. V. Monakhov, B. G. Svensson, and A. Yu. KuznetsovLi is present in hydrothermally grown ZnO at high concentrations and is known to compensate both n- and p-type doping due to its amphoteric nature. However, Li can be manipulated by annealing and ion implantation in ZnO. Fast, 20 ms flash anneals in the 9001400 °C range... (Read more)
- 34. Phys. Rev. B 74, 155201 (2006) , “Crystal-field theory of Co2+ in doped ZnO”, R. O. Kuzian, A. M. Daré, P. Sati, and R. HaynWe present a crystal-field theory of transition-metal impurities in semiconductors in a trigonally distorted tetrahedral coordination. We develop a perturbative scheme to treat covalency effects within the weak ligand field case (Coulomb interaction dominates over one-particle splitting) and apply... (Read more)
- 35. Phys. Rev. B 74, 144432 (2006) , “Role of defects in ferromagnetism in Zn1−xCoxO: A hybrid density-functional study”, C. H. PattersonExperimental studies of Zn1−xCoxO as thin films or nanocrystals have found ferromagnetism and Curie temperatures above room temperature and that p- or n-type doping of Zn1−xCoxO can change its magnetic... (Read more)
- 36. Phys. Rev. B 74, 115203 (2006) , “From ferromagnetic to antiferromagnetic interactions in n-type Zn1–xMnxO: An electron paramagnetic resonance study”, A. Ben Mahmoud, H. J. von Bardeleben, J. L. Cantin, A. Mauger, E. Chikoidze, and Y. DumontContradictory results concerning the formation of a ferromagnetic state in Mn doped ZnO layers have been reported in the last years. We present the results of an electron paramagnetic resonance study on homogeneous single phase n-type conductive Zn1xMnxO... (Read more)
- 37. Phys. Rev. B 74, 081201 (2006) , “Design of shallow acceptors in ZnO: First-principles band-structure calculations”, Jingbo Li, Su-Huai Wei, Shu-Shen Li, and Jian-Bai Xiap-type doping is a great challenge for the full utilization of ZnO as short-wavelength optoelectronic material. Due to a large electronegative characteristic of oxygen, the ionization energy of acceptors in ZnO is usually too high. By analyzing the defect wave-function character, we propose... (Read more)
- 38. Phys. Rev. B 74, 045208 (2006) , “Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy”, G. Brauer, W. Anwand, W. Skorupa, J. Kuriplach, O. Melikhova, C. Moisson, H. von Wenckstern, H. Schmidt, M. Lorenz, and M. GrundmannHigh-quality single crystals of ZnO in the as-grown and N+ ion-implanted states have been investigated using a combination of three experimental techniquesnamely, positron lifetime/slow positron implantation spectroscopy accompanied by theoretical calculations of the positron... (Read more)
- 39. Phys. Rev. B 74, 045204 (2006) , “Donor-acceptor pairs in the confined structure of ZnO nanocrystals”, Serguei B. Orlinskii, Hubert Blok, and Jan SchmidtThe electron paramagnetic resonance signal of an exchange-coupled pair consisting of a shallow interstitial Li donor and a deep Na-related acceptor has been identified in ZnO nanocrystals with radii smaller than 1.5 nm. From electron nuclear double resonance experiments it is concluded that the... (Read more)
- 40. Phys. Rev. B 74, 045202 (2006) , “Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors”, Anderson Janotti, David Segev, and Chris G. Van de WalleUsing first-principles methods based on density functional theory within the local density approximation (LDA) we calculate the structural and electronic properties of wurtzite MgO, ZnO, and CdO, and discuss their similarities and dissimilarities with the corresponding Group-III nitrides AlN, GaN,... (Read more)
- 41. Phys. Rev. B 73, 235209 (2006) , “Temperature dependence of the vibrational spectrum of a Li-OH complex in ZnO: Infrared absorption experiments and theory”, Kevin R. Martin, Philip Blaney, Gang Shi, Michael Stavola, and W. Beall FowlerConsiderable interest has developed in the potential use of IIVI oxides as electronic and optical materials. In several cases, alkali atoms have been suggested as dopants. We report on the theoretical and experimental investigation of infrared and vibrational properties of a Li-OH complex in... (Read more)
- 42. Phys. Rev. B 73, 205203 (2006) , “First-principles study of intrinsic point defects in ZnO: Role of band structure, volume relaxation, and finite-size effects”, Paul Erhart, Karsten Albe, and Andreas KleinDensity-functional theory (DFT) calculations of intrinsic point defect properties in zinc oxide were performed in order to remedy the influence of finite-size effects and the improper description of the band structure. The generalized gradient approximation (GGA) with empirical self-interaction... (Read more)
- 43. Phys. Rev. B 73, 195204 (2006) , “Hydrogen migration in single crystal and polycrystalline zinc oxide”, N. H. NickelHydrogen diffusion in single crystal and polycrystalline zinc oxide was investigated by deuterium diffusion and hydrogen effusion experiments. Deuterium concentration depth profiles were measured as a function of the passivation temperature, while in H effusion experiments the molecular hydrogen... (Read more)
- 44. Phys. Rev. B 73, 115207 (2006) , “First-principles study of migration mechanisms and diffusion of oxygen in zinc oxide”, Paul Erhart and Karsten AlbeWe have performed density-functional theory calculations in conjunction with the climbing image nudged elastic band method in order to study the self-diffusion of oxygen in zinc oxide. To this end, we have derived the complete set of migration paths for vacancies as well as interstitials in wurtzite... (Read more)
- 45. Phys. Rev. Lett. 97, 106802 (2006) , “Role of Pr Segregation in Acceptor-State Formation at ZnO Grain Boundaries”, Yukio Sato, James P. Buban, Teruyasu Mizoguchi, Naoya Shibata, Masatada Yodogawa, Takahisa Yamamoto, and Yuichi IkuharaThe role of Pr doping on double Schottky barrier formations at ZnO single grain boundaries was investigated by the combination of current-voltage measurements, atomic-resolution Z-contrast scanning transmission electron microscopy, and first-principles calculations. Although Pr segregated to... (Read more)
- 46. Phys. Rev. Lett. 96, 17203 (2006) , “Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co”, P. Sati, R. Hayn, R. Kuzian, S. Régnier, S. Schäfer, A. Stepanov, C. Morhain, C. Deparis, M. Laügt, M. Goiran, and Z. GolackiWe report on the magnetic properties of thoroughly characterized Zn1-xCoxO epitaxial thin films, with low Co concentration, x=0.0030.005. Magnetic and EPR measurements, combined with crystal field theory, reveal that isolated Co2+ ions in... (Read more)
- 47. Superlatt. Microstruct. 39, 247-256 (2006) , “Optical and morphological features of bulk and homoepitaxial ZnO”, R. Yakimova, G.R. Yazdi, N.T. Son, I. Ivanov, M. Syväjärvi, S. Sun, G. Tompa, A. Kuznetsov , B. SvenssonZnO substrate crystals from two different sources, and epitaxial layers have been studied by SEM, AFM, photoluminescence and EPR. Although fabricated by the same growth principle, i.e. the hydrothermal technique, the substrates differ in terms of purity and structural quality. In the PL spectra of... (Read more)
- 48. Thin Solid Films 496, 169-173 (2006) , “Green luminescence from Mn ions in ZnO–GeO2 glasses prepared by sol–gel method and their glass ceramics”, Tomoe Sanada, Kazuhiro Yamamoto, Noriyuki Wada , Kazuo KojimaZn2SiO4:Mn2+ is one of the green light luminants used for cathode ray tubes of televisions. Recently, optical materials emitting strong visible light under lower energy excitation have been expected. To obtain new luminants of high quality, we prepared Mn ion doped ZnO–GeO2 glasses and glass... (Read more)
- 49. Appl. Phys. Lett. 87, 223111 (2005) , “Time-resolved photoluminescence from ZnO nanostructures”, W. M. Kwok, A. B. Djuriši?, Y. H. Leung, W. K. Chan, D. L. PhillipsDifferent ZnO nanostructures (tetrapods, shells, rods, and highly faceted rods) were characterized by photoluminescence (PL) and time-resolved PL measurements. It was found that different nanostructures exhibit very different optical properties in terms of defect emission and decay times of the... (Read more)
- 50. Appl. Phys. Lett. 87, 211912 (2005) , “Deep-level emissions influenced by O and Zn implantations in ZnO”, Q. X. Zhao, P. Klason, M. Willander, H. M. Zhong, W. Lu, J. H. YangA set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1×1017/cm3 and 5×1019/cm3. The samples were thermally treated in an... (Read more)
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