« Previous
Next »
(183 hits, 1/1)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 1. Appl. Phys. Lett. 93, 072102 (2008) , AIP , “Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor”, L. H. Willems van Beveren, H. Huebl, D. R. McCamey, T. Duty, A. J. Ferguson, R. G. Clark, and M. S. BrandtWe report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At millikelvin temperatures, continuous wave spectra were obtained up to 40 ... (Read more)
- 2. Appl. Phys. Lett. 91, 133507 (2007) , “Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices”, J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. KrishnanWe utilize a very sensitive electron spin resonance technique called spin-dependent tunneling to identify defect centers involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors. The defect's 29Si hyperfine... (Read more)
- 3. Appl. Phys. Lett. 90, 123502 (2007) , “Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”,The authors combine metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect... (Read more)
- 4. J. Appl. Phys. 101, 024101 (2007) , “Defect states in the high-dielectric-constant gate oxide HfSiO4”, K. Xiong, Y. Du, K. Tse, and J. RobertsonHafnium silicate has a high dielectric constant and is a leading candidate to act as a gate dielectric. The defect energy levels have been calculated. The oxygen vacancy is found to give rise to Si-like levels which lie within the band gap of Si. The vacancy states are very localized and are... (Read more)
- 5. J. Appl. Phys. 101, 013703 (2007) , “Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si”, B. B. Triplett, P. T. Chen, Y. Nishi, P. H. Kasai, J. J. Chambers, and L. ColomboElectron spin resonance measurements on 4 and 40 nm thick (HfO2)0.6(SiO2)0.4 and (HfO2)0.4(SiO2)0.6 high-κ films on (100)Si wafers detected Pb0 and Pb1... (Read more)
- 6. Phys. Rev. B 75, 085423 (2007) , “Room-temperature atmospheric oxidation of Si nanocrystals after HF etching”, X. D. Pi, L. Mangolini, S. A. Campbell, and U. KortshagenThe effect of HF etching of the silicon oxide shell covering the surface of Si nanocrystals (NCs) on the subsequent room-temperature atmospheric oxidation of Si-NCs has been investigated by means of photoluminescence measurements, Fourier transform infrared spectroscopy, and electron paramagnetic... (Read more)
- 7. Phys. Rev. B 75, 085415 (2007) , “Positronium as a probe of transient paramagnetic centers in a-SiO2”, D. B. Cassidy, K. T. Yokoyama, S. H. M. Deng, D. L. Griscom, H. Miyadera, H. W. K. Tom, C. M. Varma, and A. P. Mills, Jr.A laser-pump, positron-probe technique has been developed for measuring the dynamics of laser-induced paramagnetic centers in porous materials. The basis of the technique is the fact that the annihilation rate of ortho-positronium may increase in the presence of unpaired spins. By using an intense... (Read more)
- 8. Phys. Rev. B 75, 033303 (2007) , “Excitons in silicon nanocrystallites: The nature of luminescence”, Eleonora Luppi, Federico Iori, Rita Magri, Olivia Pulci, Stefano Ossicini, Elena Degoli, and Valerio OlevanoThe absorption and emission spectra of silicon nanocrystals up to 1 nm diameter have been calculated within a first-principles framework. Our calculations include geometry optimization and the many-body effects induced by the creation of an electron-hole pair. Starting from hydrogenated silicon... (Read more)
- 9. Phys. Rev. B 75, 024205 (2007) , “Mechanical strength and coordination defects in compressed silica glass: Molecular dynamics simulations”, Yunfeng Liang, Caetano R. Miranda, and Sandro ScandoloContrary to ordinary solids, which are normally known to harden by compression, the compressibility of SiO2 (silica) glass has a maximum at about 2–4 GPa and its mechanical strength shows a minimum around 10 GPa. At this pressure, the compression of silica glass undergoes a change... (Read more)
- 10. Phys. Rev. B 75, 024109 (2007) , “Optical and EPR properties of point defects at a crystalline silica surface: Ab initio embedded-cluster calculations”, L. Giordano, P. V. Sushko, G. Pacchioni, and A. L. ShlugerWe have studied the structure and spectroscopic properties of the paramagnetic nonbridging oxygen hole center and of the Egamma[prime]" align="middle"> center at the hydroxylated silica surfaces using density functional theory and an embedded-cluster model. To investigate the... (Read more)
- 11. Phys. Rev. Lett. 98, 227401 (2007) , “Formation of Hydrogen Impurity States in Silicon and Insulators at Low Implantation Energies”, T. Prokscha, E. Morenzoni, D. G. Eshchenko, N. Garifianov, H. Glückler, R. Khasanov, H. Luetkens, and A. SuterThe formation of hydrogenlike muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz, and sapphire. By varying the initial energy of positive muons... (Read more)
- 12. Phys. Rev. Lett. 98, 026101 (2007) , “Bonding at the SiC-SiO2 Interface and the Effects of Nitrogen and Hydrogen”, Sanwu Wang, S. Dhar, Shu-rui Wang, A. C. Ahyi, A. Franceschetti, J. R. Williams, L. C. Feldman,, and Sokrates T. PantelidesUnlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to... (Read more)
- 13. Appl. Phys. Lett. 89, 253124 (2006) , “White electroluminescence from C- and Si-rich thin silicon oxides”, O. Jambois, B. Garrido, P. Pellegrino, Josep Carreras, A. Pérez-Rodríguez, J. Montserrat, C. Bonafos, G. BenAssayag, and S. SchammWhite electroluminescence from carbon- and silicon-rich silicon oxide layers is reported. The films were fabricated by Si and C ion implantation at low energy in 40 nm thick SiO2, followed by annealing at 1100 °C. Structural and optical studies allow assigning the... (Read more)
- 14. Appl. Phys. Lett. 89, 222103 (2006) , “Comparison of near-interface traps in Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC structures”, Marc Avice, Ulrike Grossner, Ioana Pintilie, Bengt G. Svensson, Ola Nilsen, and Helmer FjellvagAluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of capacitance-voltage and thermal dielectric relaxation current measurements, the interface... (Read more)
- 15. Appl. Phys. Lett. 89, 122112 (2006) , “Interface states for HfO2/Si structure observed by x-ray photoelectron spectroscopy measurements under bias”, Osamu Maida, Ken-ichi Fukayama, Masao Takahashi, Hikaru Kobayashi, Young-Bae Kim, Hyun-Chul Kim, and Duck-Kyun ChoiA 1.0 nm silicon nitride (SiN) layer can prevent reaction between HfO2 and Si completely. In this case, the interface state spectra obtained from x-ray photoelectron spectroscopy measurements under bias have two peaks above and below the midgap, attributable to Si dangling bonds... (Read more)
- 16. Appl. Phys. Lett. 89, 112121 (2006) , “Nature and stability of the (100)Si/LaAlO3 interface probed by paramagnetic defects”, A. Stesmans, K. Clémer, V. V. Afanas'ev, L. F. Edge, and D. G. SchlomElectron spin resonance analysis of (100)Si/LaAlO3 structures reveals the absence of a Si/SiO2-type interface in terms of archetypal Si-dangling bond-type Si/SiO2 interface defects (Pb0,Pb1). With no... (Read more)
- 17. Appl. Phys. Lett. 89, 092902 (2006) , “Charge trapping in nitrided HfSiO gate dielectric layers”, G. Vellianitis, Z. M. Rittersma, and J. PétryThe effects of HfSiO nitridation on charge trapping and long-term dielectric reliability are investigated. A comparison between decoupled plasma nitridation, annealing in NH3, and no nitridation is made. It was found that thinner HfSiO layers show less trapped charge. Decoupled plasma... (Read more)
- 18. Appl. Phys. Lett. 89, 092120 (2006) , “Defect generation at SiO2/Si interfaces by low pressure chemical vapor deposition of silicon nitride”, Hao Jin, K. J. Weber, and P. J. SmithLow pressure chemical vapor deposition of Si3N4 on oxidized Si (111) surfaces causes a change in the properties of the dominant interface defect, the Pb center, observed by electron paramagnetic resonance. The change in the signature of the... (Read more)
- 19. Appl. Phys. Lett. 89, 063508 (2006) , “Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures”, Tae Hun Kim, Il Han Park, Jong Duk Lee, Hyung Cheol Shin, and Byung-Gook ParkThe authors modified the charge decay model of silicon-oxide-nitride-oxide-silicon-type memory at the temperatures above 150 °C. The modified model includes the effect of the internal electric field induced by the charges trapped in silicon nitride layer. The authors extracted the trap density... (Read more)
- 20. Appl. Phys. Lett. 89, 061103 (2006) , “Field induced photoluminescence quenching and enhancement of CdSe nanocrystals embedded in SiO2”, A. W. Achtstein, H. Karl, and B. StritzkerThe authors describe the operation of an electro-optical photoluminescence quenching device based on CdSe nanoclusters formed using sequential ion implantation of Cd+ and Se+ in thermally grown SiO2 on silicon. A sample geometry consisting of a semitransparent gold... (Read more)
- 21. Appl. Phys. Lett. 89, 041918 (2006) , “Detection and mobility of hafnium in SiO2”, Dmitri O. Klenov, Thomas E. Mates, and Susanne StemmerHigh-angle annular dark-field imaging in scanning transmission electron microscopy and x-ray photoelectron spectroscopy were used to investigate thermal SiO2 layers doped with Hf by ion implantation. Hf was mobile under the focused electron beam in the as-implanted samples. After... (Read more)
- 22. Appl. Phys. Lett. 89, 041916 (2006) , “Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process”, Dong Wang, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, and Masahiko NakamaeCrystal qualities of Si/SiGe/Si-on-insulator structures with different SiGe thicknesses were evaluated by photoluminescence (PL). The wafers were annealed at different temperatures with a ramping rate of 5 °C/min. Free exciton PL peaks were clearly observed for the as-grown wafers and decreased... (Read more)
- 23. Appl. Phys. Lett. 89, 031116 (2006) , “Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx”, C. J. Oton, W. H. Loh, and A. J. KenyonDespite the observation by a number of groups of a strong luminescence sensitization effect of erbium ions by excitation exchange from silicon nanoclusters, there is considerable experimental evidence that the fraction of Er ions excited by Si-nc is actually very low for much of the material... (Read more)
- 24. Appl. Phys. Lett. 88, 261102 (2006) , “Light-emitting defects and epitaxy in alkali-ion-implanted α quartz”, J. Keinonen, S. Gsiorek, P. K. Sahoo, S. Dhar, and K. P. LiebLight-emitting centers in alkali-ion-implanted quartz have been investigated with respect to the solid phase epitaxial growth of the ion irradiation induced amorphous zone. Cathodoluminescence was studied under the conditions of chemical epitaxy in annealing the samples, implanted with... (Read more)
- 25. Appl. Phys. Lett. 88, 212112 (2006) , “Reliability of thermally oxidized SiO2/4H-SiC by conductive atomic force microscopy”, Patrick Fiorenza and Vito RaineriThe dielectric breakdown (BD) kinetics of silicon dioxide (SiO2) thin films thermally grown on 4H-SiC was determined by comparison between I-V measurements on large area (up to 1.96×105 cm2) metal-oxide-semiconductor structures and... (Read more)
- 26. Appl. Phys. Lett. 88, 193502 (2006) , “Role of oxygen vacancy in HfO2/SiHfO2/Si(100) interfaces”, D.-Y. Cho, S.-J. Oh, Y. J. Chang, T. W. Noh, R. Jung, J.-C. LeeWe have investigated the interface states in HfO2/SiO2/Si(100) systems that were prepared by using the in situ pulsed laser deposition technique. X-ray photoelectron spectroscopy data revealed that when the HfO2 film thickness exceeds 11 Å, the film... (Read more)
- 27. Appl. Phys. Lett. 88, 171912 (2006) , “Impact of nitridation on open volumes in HfSiOx studied using monoenergetic positron beams”, A. Uedono, K. Ikeuchi, T. Otsuka, K. Yamabe, K. Eguchi, M. Takayanagi, T. Ohdaira, M. Muramatsu, R. Suzuki, A. S. Hamid, T. ChikyowThe effects of nitridation on open volumes in thin HfSiOx films fabricated by metal-organic chemical vapor deposition were studied using monoenergetic positron beams. It was found that positrons were annihilated from the trapped state by open volumes that exist intrinsically in... (Read more)
- 28. Appl. Phys. Lett. 88, 092108 (2006) , “Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC/SiO2 interfaces in oxidized porous SiC”, J. L. Cantin, H. J. von Bardeleben, Yue Ke, R. P. Devaty, W. J. ChoykeThe effect of forming gas and vacuum annealing on the concentration of carbon dangling bond (PbC) centers at 3C- and 4H-SiC/SiO2 interfaces has been studied by electron paramagnetic resonance (EPR) spectroscopy. Our results show efficient passivation at 400 °C and... (Read more)
- 29. Appl. Phys. Lett. 88, 012101 (2006) , “The structure of the SiO2/Si(100) interface from a restraint-free search using computer simulations”, Dominik Fischer, Alessandro Curioni, Salomon Billeter, and Wanda AndreoniThe structure of the interface between SiO2 and Si(100) is investigated using the replica-exchange method driven by classical molecular dynamics simulations based on ab initio-derived interatomic potentials. Abrupt interfaces are shown to be unstable, whereas a substoichiometric... (Read more)
- 30. J. Appl. Phys. 100, 113519 (2006) , “Void growth during thermal decomposition of silicon oxide layers studied by low-energy electron microscopy”, H. Hibino, M. Uematsu, and Y. WatanabeLow-energy electron microscopy (LEEM) has been used to investigate void growth during thermal decomposition of 1–2-nm-thick silicon oxide on Si substrates. Real-time LEEM observations clarify that the void size (square root of the void area) grows linearly with time. The temperature dependence... (Read more)
- 31. J. Appl. Phys. 100, 104904 (2006) , “Does nitrogen transport in vitreous silica only take place in molecular form?”, Q. Dong and G. HultquistIt is generally believed that nitrogen transport in vitreous silica exclusively takes place in molecular form, although no evidence for this is found in the literature. Actually, an analysis of literature data of transport of nitrogen and noble gases in vitreous silica at 900 °C suggests it may... (Read more)
- 32. J. Appl. Phys. 100, 104902 (2006) , “Concentration-dependent diffusion of hydrogen in vitreous silica”, J. Rundgren, Q. Dong, and G. HultquistWe report diffusion experiments where hydrogen permeates through a 1 mm wall of vitreous silica at 550 °C with applied gas pressures of 70, 460, 840, and 1200 mbars. For each pressure, and at steady state, the flux and the amount of hydrogen in the material are measured. Within the... (Read more)
- 33. J. Appl. Phys. 100, 094108 (2006) , “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. RyanThe influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)
- 34. J. Appl. Phys. 100, 093716 (2006) , “Determination of capture cross sections for as-grown electron traps in HfO2/HfSiO stacks”, C. Z. Zhao, J. F. Zhang, M. B. Zahid, B. Govoreanu, G. Groeseneken, and S. De GendtA major challenge for replacing gate SiON with HfO2 is the instability and reliability of HfO2. Unlike the SiON, there can be substantial amount of as-grown electron traps in HfO2. These traps can cause instability in the threshold voltage and contribute to the... (Read more)
- 35. J. Appl. Phys. 100, 033517 (2006) , “Sources of optical absorption between 5.7 and 5.9 eV in silica implanted with Si or O”, R. H. Magruder, III, A. Stesmans, K. Clémer, R. A. Weeks, and R. A. WellerTo determine if the only source of optical absorption between 5.8 and 5.9 eV is the E center (absorbing at 5.85 eV) two separate suites of type III silica samples were implanted, one with Si and one with O. Several ion energies were used for implantation to produce layers 600 and... (Read more)
- 36. J. Appl. Phys. 100, 023711 (2006) , “Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy”, S.-D. Tzeng and S. GwoCharge trapping properties of electrons and holes in ultrathin nitride-oxide-silicon (NOS) structures were quantitatively determined by variable-temperature electrostatic force microscopy (EFM). From charge retention characteristics obtained at temperatures between 250 and 370 °C and assuming... (Read more)
- 37. J. Appl. Phys. 100, 013706 (2006) , “Distributions of self-trapped hole continuums in silica glass”, R. P. Wang, K. Saito, and A. J. IkushimaPhotobleaching of self-trapped holes (STH) in low temperature UV-irradiated silica glass has been investigated by the electron spin resonance method. The bleaching time dependence of the decay of two kinds of STH, STH1, and STH2, could be well fitted by the stretched... (Read more)
- 38. J. Appl. Phys. 99, 103507 (2006) , “Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich SiO2/Si interfaces”, D. Skarlatos, P. Tsouroutas, V. Em. Vamvakas, and C. TsamisIn this work we perform a systematic study of the dissolution of a dislocation loop layer under the influence of inert SiO2/Si and nitrogen-rich SiO2/Si interfaces. The composition of the dislocation loop layer was just after its formation 10%20% Frank dislocation loops... (Read more)
- 39. J. Appl. Phys. 99, 103102 (2006) , “Electroluminescence properties of the Gd3+ ultraviolet luminescent centers in SiO2 gate oxide layers”, J. M. Sun, S. Prucnal, W. Skorupa, T. Dekorsy, A. Müchlich, M. Helm, L. Rebohle, and T. GebelElectroluminescence (EL) properties in the ultraviolet (UV) range were studied on Gd-implanted indium tin oxide/SiO2:Gd/Si metal-oxide-semiconductor light emitting devices. The efficient UV line at 316 nm from Gd3+ centers shows a maximum power density of 2 mW/cm2... (Read more)
- 40. J. Appl. Phys. 99, 073511 (2006) , “Effects of temperature and flux on oxygen bubble formation in Li borosilicate glass under electron beam irradiation”, Nadège Ollier, Giancarlo Rizza, Bruno Boizot, and Guillaume PetiteOxygen bubble formation and evolution under a 300 keV electron beam are analyzed in a Li borosilicate glass under different irradiation conditions: temperature, flux, and dose. Oxygen bubbles are observed to form in a delimited flux and temperature region with a threshold requirement. This region... (Read more)
- 41. J. Appl. Phys. 99, 054507 (2006) , “Characterization of HfSiON gate dielectrics using monoenergetic positron beams”, A. Uedono, K. Ikeuchi, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, N. Umezawa, A. Hamid, T. Chikyow, T. Ohdaira M. Muramatsu, R. Suzuki, S. Inumiya, S. Kamiyama, Y. Akasaka, Y. Nara, and K. YamadaThe impact of nitridation on open volumes in thin HfSiOx films fabricated on Si substrates by atomic layer deposition was studied using monoenergetic positron beams. For HfSiOx, positrons were found to annihilate from the trapped state due to open volumes which... (Read more)
- 42. J. Appl. Phys. 99, 023702 (2006) , “Deep traps in oxide-nitride-oxide stacks fabricated from hydrogen and deuterium containing precursors”, G. Rosenman, M. Naich, Ya. Roizin, and Rob van SchaijkThe energy spectrum of the traps and thermal stability of stored charge have been studied by the thermostimulated exoelectron emission method in hydrogenated H and deuterated D oxide-nitride-oxide (ONO) multilayer stacks of silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memories. It is... (Read more)
- 43. Microelectron. Reliability 46, 1 (2006) , “NBTI degradation: From physical mechanisms to modelling”,An overview of the evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented. The physical mechanisms of the degradation as well as the different defects involved have been discussed according to a systematic set of experiments with different stress conditions. According to our findings, a physical model is proposed which could be used to more accurately predict the transistor degradation. Finally, based on our new present understanding, a new characterization methodology is proposed, which would open the way to a more accurate determination of parameter shifts and thus allowing implementing the degradation into design rules. (Read more)
- 44. Phys. Rev. B 74, 205428 (2006) , “Er site in Er-implanted Si nanoclusters embedded in SiO2”, C. Maurizio, F. Iacona, F. D'Acapito, G. Franzò, and F. PrioloWe have investigated by extended x-ray absorption fine structure spectroscopy the local order around Er atoms introduced by ion implantation in substoichiometric silica films prepared by plasma enhanced chemical vapor deposition, where Si nanoclusters have been formed by different preimplantation... (Read more)
- 45. Phys. Rev. B 74, 125203 (2006) , “Density functional theory of structural transformations of oxygen-deficient centers in amorphous silica during hole trapping: Structure and formation mechanism of the Egamma[prime]" align="middle"> center”, T. Uchino and T. YokoWe investigate the hole trapping process of a neutral oxygen vacancy in amorphous silicon dioxide (a-SiO2) using cluster calculations based on the density functional theory (DFT) method. We show that trapping a hole at a neutral oxygen vacancy leads to the formation of several... (Read more)
- 46. Phys. Rev. B 74, 100201(R) (2006) , “Direct spectroscopic observation of the atomic-scale mechanisms of clustering and homogenization of rare-earth dopant ions in vitreous silica”, Sabyasachi Sen, Rafail Rakhmatullin, Ruslan Gubaidullin, and Andreas PöpplStructural aspects of clustering of rare earth ions in oxide glasses have been studied for the last several years in relation to their applications in photonics. However, the mechanism of homogenization of the spatial distribution of rare earth ions by codoping, typically with Al or P, is still not... (Read more)
- 47. Phys. Rev. B 74, 035309 (2006) , “Structure of the interface between ultrathin SiO2 films and 4H-SiC(0001)”, Mark Schürmann, Stefan Dreiner, Ulf Berges, and Carsten WestphalThe interface between ultrathin SiO2 films and 4H-SiC(0001) has been studied by x-ray photoelectron spectroscopy (XPS) and photoelectron diffraction. The investigation was performed for two different films. An ordered silicate layer showed a clear (×)R30°... (Read more)
- 48. Phys. Rev. B 74, 033309 (2006) , “Effect of the triplet state on the random telegraph signal in Si n-MOSFETs”, Enrico Prati, Marco Fanciulli, Giorgio Ferrari, and Marco SampietroWe report on the static magnetic field dependence of the random telegraph signal in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and low temperatures, we find that the characteristic time ratio changes by three orders of magnitude... (Read more)
- 49. Phys. Rev. B 73, 235211 (2006) , “Ab initio calculations for the interconversion of optically active defects in amorphous silica”, M. M. G. Alemany and James R. ChelikowskyUsing ab initio calculations on clusters, we have identified a new reaction path between the dicoordinated silicon atom defect and the paramagnetic Egamma[prime]" align="middle"> center in amorphous silica. Under ionizing irradiation, the dicoordinated silicon atom... (Read more)
- 50. Phys. Rev. B 73, 115203 (2006) , “Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica”, S. Agnello and L. NuccioThe effects of isochronal thermal treatments on three -irradiation-induced point defects, named the E, ODC(II), and H(I) centers, are investigated in various types of commercial silica (a-SiO2). ODC(II) is investigated by means of photoluminescence spectroscopy,... (Read more)
- 51. Phys. Rev. B 73, 073302 (2006) , “Origin of Pb1 center at SiO2/Si(100) interface: First-principles calculations”, K. Kato, T. Yamasaki, T. UdaBased on first-principles calculations, we studied the generation behavior of Pb centers at SiO2/Si interfaces, especially for Pb1 centers, under oxidation of Si(100) surfaces. Pb1 centers were found to be formed... (Read more)
- 52. Phys. Rev. B 73, 014111 (2006) , “Structure of SiO2/4H-SiC interface probed by positron annihilation spectroscopy”, M. Maekawa, A. Kawasuso, M. Yoshikawa, A. Miyashita, R. Suzuki, T. OhdairaThe structure of the SiO2/4H-SiC interface produced by dry oxidation has been studied using positron annihilation spectroscopy using energy-variable slow positron beams. Based on the Doppler broadening shape and wing parameter (S-W) correlation, the interface layer was... (Read more)
- 53. Phys. Rev. Lett. 97, 155901 (2006) , “Proton Diffusion Mechanism in Amorphous SiO2”, Julien Godet and Alfredo PasquarelloWe study proton diffusion in amorphous SiO2 from the atomic scale to the long-range percolative regime. Ab initio molecular dynamics suggest that the dominant atomic process consists in cross-ring interoxygen hopping assisted by network vibrations. A statistical analysis accounting... (Read more)
- 54. Phys. Rev. Lett. 97, 135502 (2006) , “29Si Hyperfine Structure of the Eα Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report a study by electron paramagnetic resonance on the Eα point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on γ-ray irradiated oxygen-deficient materials and pointed out that the 29Si... (Read more)
- 55. Phys. Rev. Lett. 97, 116101 (2006) , “Oxygen Migration, Agglomeration, and Trapping: Key Factors for the Morphology of the Si-SiO2 Interface”, L. Tsetseris and S. T. PantelidesThe measured activation energies for oxide growth rates at the initial and late stages of oxidation of Si are 2 and 1.2 eV, respectively. These values imply that oxidation can proceed at temperatures much smaller than the 800 °C normally used to obtain devices with exceptionally smooth... (Read more)
- 56. Phys. Rev. Lett. 97, 066101 (2006) , “Structure and Interconversion of Oxygen-Vacancy-Related Defects on Amorphous Silica”, Chin-Lung Kuo and Gyeong S. HwangAtomic structure and structural stability of neutral oxygen vacancies on amorphous silica are investigated using combined Monte Carlo and density functional calculations. We find that, unlike their bulk counterparts, the Si-Si dimer configuration of surface oxygen vacancies is likely to be unstable... (Read more)
- 57. Phys. Rev. Lett. 97, 016102 (2006) , “Scaling and Universality of Roughening in Thermal Oxidation of Si(001)”, Hiroo Omi, Hiroyuki Kageshima, and Masashi UematsuBy analyzing atomic force microscopy images, we derive a continuum equation that quantitatively explains the roughening at the Si(001)-SiO2 interface during thermal oxidation at the temperature at 1200 °C in an Ar atmosphere containing a small fraction of O2. We also show... (Read more)
- 58. Appl. Phys. Lett. 87, 261907 (2005) , “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films”, S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, J. T. GlassSilicon oxynitride films were deposited using a plasma-enhanced chemical vapor deposition process. The bond configurations of the constituent atoms in the deposited film were analyzed using x-ray photoelectron spectroscopy. Analysis of the Si 2p spectra showed the presence of... (Read more)
- 59. Appl. Phys. Lett. 87, 204106 (2005) , “Direct observation of the structure of defect centers involved in the negative bias temperature instability”, J. P. Campbell and P. M. LenahanWe utilize a very sensitive electron paramagnetic resonance technique called spin-dependent recombination to observe and identify defect centers generated by modest negative bias and moderately elevated temperatures in fully processed p-channel metal-oxide-silicon field-effect transistors.... (Read more)
- 60. J. Appl. Phys. 98, 053707 (2005) , “An asymmetry of conduction mechanisms and charge trapping in thin high-k HfxTiySizO films”, A. Paskaleva, A. J. Bauer, M. LembergerThe electrical behavior of high-permittivity (high-k) hafnium titanium silicate (HfxTiySizO) layers with different Hf:Ti ratios in the films is investigated. The films were deposited by metal-organic chemical-vapor deposition using a... (Read more)
- 61. Microelectron. Reliability 45, 71 (2005) , “A comprehensive model of PMOS NBTI degradation ”,Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model. We demonstrate how to solve the reaction–diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction–diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions. (Read more)
- 62. Microelectron. Reliability 45, 57 (2005) , “Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems ”,Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/ Si<100> system were characterized by using conductance–frequency measurements, electron-spin resonance measure- ments, and synchrotron radiation X-ray photoelectron spectroscopy. It was confirmed that NBTI is reduced by using D2-annealing instead of the usual H2-annealing. Interfacial Si dangling bonds (Pb1 and Pb0 centers) were detected in a sample subjected to negative-bias temperature stress (NBTS). Although we suggest that NBTS also generates non-Pb defects, it does not seem to generate nitrogen dangling bonds. These results show that NBTI of the plasma-nitrided SiON/Si system is predominantly due to Pb depassivation. Plasma nitridation was also found to increase the Pb1/Pb0 density ratio, modify the Pb1 defect structure, and increase the latent interface trap density by generating Si suboxides at the interface. These changes are likely to be the causes of NBTI in ultrathin plasma-nitrided SiON/Si systems. (Read more)
- 63. Appl. Phys. Lett. 84, 3406-3408 (2004) , “Structure of 6H silicon carbide/silicon dioxide interface trapping defects”, David J. Meyer, Nathaniel A. Bohna, and Patrick M. LenahanWe utilize spin-dependent recombination (SDR) to observe deep level trap defects at or very near the interface of 6H silicon carbide and the SiO2 gate dielectric in SiC metal-oxide-semiconductor field effect transistors. The SDR response is strongly correlated to SiC/SiO2... (Read more)
- 64. IEEE Electron Device Lett. 25, 153 (2004) , “Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates”,
- 65. J. Appl. Phys. 95, 4096 (2004) , “Nitridation effects on Pb center structures at SiO2/Si„(100) interfaces ”,Interfacial defect structures of NO-nitride oxide on Si(100) were characterized by electron spin resonance spectroscopy. We confirmed that the effective g values of the Pb1 center are affected by interfacial nitridation even at a small nitrogen concentration of 5 at. %, while those of the Pb0 center proved to be unchanged. We observed that the shifted Pb1 line appeared gradually with interfacial nitrogen concentration, which suggests that the nitrogen-induced modified structure substitutes for the original Pb1 structure. Angular variations of the shifted Pb1 lines were also significantly different from those of pure oxide. Based on our analysis, we attributed the g value shift of the Pb1 center to dangling bond tilting, caused by the displacement of nearest-neighbor Si atoms. (Read more)
- 66. Phys. Rev. Lett. 93, 086102 (2004) , “Reaction of the Oxygen Molecule at the Si(100)–SiO2 Interface During Silicon Oxidation”, Angelo Bongiorno and Alfredo PasquarelloUsing constrained ab initio molecular dynamics, we investigate the reaction of the O2 molecule at the Si(100)SiO2 interface during Si oxidation. The reaction proceeds sequentially through the incorporation of the O2 molecule in a Si-Si bond and the... (Read more)
- 67. Phys. Rev. Lett. 92, 105505 (2004) , “In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth on Si(111)”, W. Futako, N. Mizuochi, and S. YamasakiWe report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center... (Read more)
- 68. Phys. Rev. Lett. 92, 087601 (2004) , “Hydrogen-Release Mechanisms in the Breakdown of Thin SiO2 Films”, J. Suñé and E. Y. WuThe mechanism of hydrogen release from the anode Si/SiO2 interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect... (Read more)
- 69. Phys. Rev. Lett. 92, 015502 (2004) , “Identification of the Carbon Dangling Bond Center at the 4H–SiC/SiO2 Interface by an EPR Study in Oxidized Porous SiC”, J. L. Cantin, H. J. von Bardeleben, Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. ChoykeWe report the observation of a paramagnetic interface defect in thermally oxidized porous n-type doped 4HSiC/SiO2. Based on its axial symmetry and resolved hyperfine interactions it is attributed to an sp3 carbon dangling bond center situated... (Read more)
- 70. Appl. Phys. Lett. 83, 1647 (2003) , “Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors”,An unexpected physical phenomenondynamic recovery of negative bias temperature instability (NBTI)is reported. NBTI degradation in p-type metaloxidesemiconductor field-effect transistors is significantly (by ~40%) reduced after stress interruption. NBTI recovery... (Read more)
- 71. Appl. Phys. Lett. 82, 3677-3679 (2003) , “Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems”, Shinji Fujieda, Yoshinao Miura, and Motofumi SaitohInterface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D2 annealing, conductance-frequency measurements, and electron-spin resonance measurements. D2 annealing was shown to lower... (Read more)
- 72. Appl. Phys. Lett. 82, 269 (2003) , “Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition”,The influence of nitrogen concentration at a nitrided oxide/silicon interface on the activation energies of both near-interface fixed-charge trapping and interface state generation caused by negative bias temperature instability stress has been studied quantitatively. It is observed that the charge... (Read more)
- 73. J. Appl. Phys. 94, 1 (2003) , “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing”,We present an overview of negative bias temperature instability (NBTI) commonly observed in p-channel metaloxidesemiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit... (Read more)
- 74. Phys. Rev. B 67, 195338 (2003) , “Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method”, T. Yasuda, N. Kumagai, M. Nishizawa, S. Yamasaki, H. Oheda, and K. YamabeDry oxidation kinetics of the Si(001) surface has been investigated using reflectance difference oscillation to resolve atomic-scale phenomena. The activation energy for oxidation has been found to increase as the oxide-Si interface moves in the depth direction, reaching the value for bulk... (Read more)
- 75. Appl. Phys. Lett. 81, 2397-2399 (2002) , “Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes”, Ziyuan LiuPoly-Si/SiO2/Si diodes in which oxides were grown thermally under wet oxidation conditions and subsequently treated by a post-oxidation anneal (POA) have been characterized electrically and chemically before and after applying negative-bias-temperature stress (NBTS). It was confirmed that... (Read more)
- 76. Appl. Phys. Lett. 81, 1839 (2002) , “Dual behavior of H+ at Si–SiO2 interfaces: Mobility versus trapping”, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. PantelidesWe report first-principles calculations showing that protons in the vicinity of a SiSiO2 interface can behave in two different ways. At an abrupt interface without suboxide bonds (SiSi bonds at the oxide side of the interface) H+ does not become trapped but migrates... (Read more)
- 77. Appl. Phys. Lett. 81, 1818 (2002) , “Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces”, J. Ushio, T. Maruizumi, K. Kushida-AbdelghafarWe used a density functional method to investigate the mechanism of negative-bias temperature instability (NBTI) and resultant structural changes of Si/SiO2 and Si/SiOxNy interfaces. The reaction energies for the water- and hydrogen-originated... (Read more)
- 78. Appl. Phys. Lett. 80, 4753-4755 (2002) , “Characterization of S centers generated by thermal degradation in SiO2 on (100)Si”, A. Stesmans, B. Nouwen, D. Pierreux, and V. V. Afanas'evThe structural degradation of thermal SiO2 on (100)Si under isochronal vacuum annealing in the range Tan = 950 °C1250 °C was monitored by electron spin resonance (ESR) in terms of point defect creation, including... (Read more)
- 79. Appl. Phys. Lett. 80, 1945-1947 (2002) , “Density of states of Pb1 Si/SiO2 interface trap centers”, J. P. Campbell and P. M. LenahanThe electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that... (Read more)
- 80. Phys. Rev. Lett. 89, 256102 (2002) , “Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide”, I. C. Vickridge, I. Trimaille, J.-J. Ganem, S. Rigo, C. Radtke, I. J. R. Baumvol, F. C. StedileThermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the thermal growth of silicon oxide films on Si. Results demonstrate that... (Read more)
- 81. Phys. Rev. Lett. 89, 135507 (2002) , “Diffusion and Reactions of Hydrogen in F2-Laser-Irradiated SiO2 Glass”, Koichi Kajihara, Linards Skuja, Masahiro Hirano, and Hideo HosonoThe diffusion and reactions of hydrogenous species generated by single-pulsed F2 laser photolysis of SiO-H bond in SiO2 glass were studied in situ between 10 and 330Â K. Experimental evidence indicates that atomic hydrogen (H0) becomes mobile even at temperatures as... (Read more)
- 82. Appl. Phys. Lett. 78, 1571 (2001) , “Hydrogen Passivation and Activation of Oxygen Complexes in Silicon”, S. N. Rashkeev, M. Di Ventra, and S. T. PantelidesWe report first-principles calculations in terms of which we describe the role of hydrogen in passivating or activating oxygen complexes in Si. In particular we find that attaching H to a pre-existing oxygen cluster can change the electric activity of the cluster. Furthermore, the addition of a... (Read more)
- 83. Appl. Phys. Lett. 78, 1453-1454 (2001) , “Response to "Comment on `Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum" ' " [Appl. Phys. Lett. 78, 1451 (2001)]”, Tetsuya D. Mishima and Patrick M. LenahanWe recently published a letter in which we utilized spin-dependent recombination (SDR) measurements to demonstrate that Pb1 centers, silicon dangling-bond defects at the (001) Si/SiO2 interface, have electronic levels in the silicon band gap.1 In their comment on our... (Read more)
- 84. J. Appl. Phys. 90, 6026-6031 (2001) , “Oxygen-Related Defects in Low-Dose Separation-by-Implanted Oxygen Wafers Probed by Monoenergetic Positron Beams”, A. Uedono, Z. Q. Chen, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira, T. Mikado.The depth distributions of oxygen-related defects in separation-by-implanted oxygen wafers were determined from measurements of Doppler broadening spectra of the annihilation radiation. Vacanyoxygen complexes were introduced by implanting 180-keV oxygen at (26)×1017 ... (Read more)
- 85. J. Appl. Phys. 89, 5997-6001 (2001) , “Oxygen Recoil Implant from SiO2 Layers into Single-Crystalline Silicon”, G. Wang, Y. Chen, D. Li, S. Oak, G. Srivastav, S. Banerjee, A. Tasch, P. Merrill, R. Bleiler.It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted... (Read more)
- 86. Jpn. J. Appl. Phys. 40, 2840 (2001) , “Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics”,We have characterized the leakage current paths of ultra-thin gate dielectrics using spin-dependent tunneling (SDT) spectroscopy. A spin-dependent current was detected in metal-oxide-semiconductor diodes with chemical-vapor-deposition SiN gate films with thickness less than 3 nm. We examined the nature of the trap sites in terms of g-value, bias-dependent signal intensity, and magnetic-field orientation dependence. The main feature of the observed spectrum is attributed to a paramagnetic Si site in the SiN films. By using a quantitative model of electron spin-polarization, we were able to estimate the ratio of trap-assisted current to the total leakage current. (Read more)
- 87. Phys. Rev. B 64, 195403 (2001) , “Intrinsic and H-induced defects at Si-SiO2 Interfaces”, D. J. ChadiDefect reactions pertaining to Si-SiO2 interfaces are investigated using a first-principles total-energy approach. Interesting results on the atomic structures of interstitial H+ and OH-, H2O, and H3O+ in SiO2 are... (Read more)
- 88. Phys. Rev. B 64, 115308 (2001) , “Experimental Investigation of Band Structure Modification in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, P. F. A. Alkemade.Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and... (Read more)
- 89. Phys. Rev. Lett. 87, 165506 (2001) , “Defect Generation by Hydrogen at the Si-SiO2 Interfaces”, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. PantelidesHydrogen is known to passivate Si dangling bonds at the Si-SiO 2 interface, but the subsequent arrival of H + at the interface causes depassivation of Si-H bonds. Here we report first-principles density functional calculations, showing that, contrary to conventional... (Read more)
- 90. Phys. Rev. Lett. 86, 5522-5525 (2001) , “E' Centers in Amorphous SiO2 Revisited: A New Look at an Old Problem”, T. Uchino, M. Takahashi, T. YokoWe present theoretical evidence that the paramagnetic E? defect centers in amorphous silicon dioxide ( a-SiO2) do not have the same microscopic structures as those well-defined in the corresponding crystalline counterparts such as ?-quartz. We then present alternative models of... (Read more)
- 91. Phys. Rev. Lett. 86, 4560-4563 (2001) , “Structure and Generation Mechanism of the Peroxy-Radiacal Defect in Amorphous Silica”, T. Uchino, M. Takahashi, and T. YokoWe provide a new model of the peroxy-radical defect in amorphous silica on the basis of quantum-chemical calculations applied to clusters of atoms to model the defect. In this model, the 29Si hyperfine splittings of the peroxy radical arise from a single silicon, in agreement with the... (Read more)
- 92. Phys. Rev. Lett. 86, 1054 (2001) , “Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process”, Takahide Umeda, Masayasu Nishizawa, Tetsuji Yasuda, Junichi Isoya, Satoshi Yamasaki, and Kazunobu TanakaElectron spin resonance (ESR) observation of dangling-bond states on the Si(111)- (7×7) surface is demonstrated for the first time. The ESR spectra clearly show that a reaction of molecular oxygen with the Si(111)- (7×7) surface is associated with the appearance of a new dangling-bond center at... (Read more)Si SiO2| EPR STM/AFM/SPM| Oxygen Pb Ps0 Ps1 Silicon dangling-bond interface surface .inp files: Si/surface(111) | last update: Masatoshi Sasaki
- 93. Appl. Phys. Lett. 77, 866 (2000) , “Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(000) face”, K. Fukuda, W. J. Cho, K. Arai, S. Suzuki, J. Senzaki, T. TanakaThe C(000) face of silicon carbide (SiC) has superior properties such as a faster oxidation ratio and a smoother surface compared with the Si(0001) face. We have investigated the oxidation and post-oxidation annealing effects on the capacitancevoltage and the interface state density... (Read more)
- 94. Appl. Phys. Lett. 76, 3771-3773 (2000) , “Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum"”, Tetsuya D. Mishima and Patrick M. LenahanThe electronic properties of the (001) Si/SiO2 Pb1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the Pb1 centers have levels in the Si band gap. Our... (Read more)
- 95. Appl. Phys. Lett. 76, 1585 (2000) , “Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing”, K. Fukuda, S. Suzuki, T. Tanaka, K. AraiThe effects of hydrogen annealing on capacitancevoltage (CV) characteristics and interface-state density (Dit) of 4HSiC metaloxidesemiconductor (MOS) structures have been investigated. The Dit was reduced to as low as... (Read more)
- 96. J. Appl. Phys. 88, 1784-1787 (2000) , “Electron Spin Resonance Centers Associated with Oxygen Precipitates in Czochralski Silicon Crystals”, M. Koizuka, H. Yamada-Kaneta.We have previously concluded that the oxygen-precipitate-associated defects that we identified by the deep levels at Ev + 0.30 eV and Ec0.25 eV were the Pb centers generated in the interface between the oxygen... (Read more)
- 97. Phys. Rev. B 61, 8393-8403 (2000) , “Dissociation Kinetics of Hydrogen-Passivated Pb Defects at the (111)Si/SiO2 Interface”, A. Stesmans.An electron-spin-resonance study has been carried out, both isothermally and isochronically, of the recovery under vacuum annealing from the hydrogen passivated state (symbolized as HPb) of paramagnetic Pb centers (Si3?Si•) at the (111)Si/SiO2... (Read more)
- 98. Phys. Rev. B 61, 16068-16076 (2000) , “Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface”, A. Stesmans, B. NouwenAn electron spin resonance (ESR) study has been carried out on the Pb centers (interfacial ?Si?Si3) in standard thermal (111)Si/SiO2, of which, in the as-grown state, a density 4.9×1012 cm-2 is inherently incorporated. The Pb density... (Read more)
- 99. Phys. Rev. Lett. 85, 2773-2776 (2000) , “Dangling Bond Defects at Si-SiO2 Interfaces: Atomic Structure of the Pb1 Center”, A. Stirling, A. Pasquarello, J.-C. Charlier, R. CarUsing a first-principles approach, we characterize dangling bond defects at Si-SiO2 interfaces by calculating hyperfine parameters for several relaxed structures. Interface models, in which defect Si atoms remain close to crystalline sites of the substrate upon relaxation, successfully... (Read more)
- 100. Mater. Res. Soc. Symp. Proc. 573, 107 (1999) , “ELECTRICAL AND OPTICAL STUDY OF CHARGE TRAPS AT PASSIVATED GaAs SURFACES”, Y. Mochizuki
- 101. Phys. Rev. Lett. 83, 372 (1999) , “Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica”, Peter E. Blöchl and James H. StathisHydrogen-related defects in oxygen-deficient silica, representing the material of a thermal gate oxide, are analyzed using first-principles calculations. Energetics and charge-state levels of oxygen vacancies, hydrogen, and their complexes in the silica framework are mapped out. The neutral hydrogen... (Read more)
- 102. Physica B 273-274, 1022-1026 (1999) , “Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs”, Peter E. Blöchl and James H. StathisDefects in silica related to hydrogen and oxygen vacancies have been analyzed using first principles density functional calculations. The hydrogen bridge has been identified as the defect responsible for the stress-induced leakage current, a forerunner of dielectric breakdown. The question of Joule... (Read more)
- 103. Physica B 273-274, 1015 (1999) , “Electron spin resonance study of the interaction of hydrogen with the (1 1 1)Si/SiO2 interface: Pb-hydrogen interaction kinetics”, A. Stesmans.The thermal interaction kinetics of interfacial Si dangling bond Pb defects (Si3≡Si·) in (1 1 1)Si/SiO2, including passivation in molecular hydrogen (pictured as PbH formation) and dissociation in vacuum, is readdressed. An initial simple thermal model had concluded simple exponential... (Read more)
- 104. J. Appl. Phys. 83, 2449-2457 (1998) , “Electron spin resonance features of interface defects in thermal (100)Si/SiO2”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) on thermal (100)Si/SiO2 predominantly exhibiting either the Pb0 or Pb1 interface defect confirms the Pb1 point symmetry as monoclinic-I with g1 = 2.0058,... (Read more)
- 105. J. Non-Cryst. Solids 241, 71-73 (1998) , “Long luminescent glass: Tb3+-activated ZnO–B2O–SiO2 glass”, Masaaki Yamazaki, Yoshinori Yamamoto, Shinobu Nagahama, Naruhito Sawanobori, Masafumi Mizuguchi , Hideo HosonoIt has been found that zinc borosilicate glasses 60ZnO–20B2O3–20SiO2 doped with 0.2 mol% Tb2O3 exhibit phosphorescence after exciting with 254 nm light. This phosphorescence arises from f–f transitions of Tb3+ ions and is observable by the eye, in the dark for up to 1 h after... (Read more)
- 106. J. Non-Cryst. Solids 239, 16-48 (1998) , “Optically active oxygen-deficiency-related centers in amorphous silicon dioxide”, Linards SkujaThe spectroscopic properties, structure and interconversions of optically active oxygen-deficiency-related point defects in vitreous silica are reviewed. These defects, the E′-centers (oxygen vacancies with a trapped hole or 3-fold-coordinated silicons), different variants of diamagnetic... (Read more)GeO2 SiO2| EPR PL gamma-irradiation optical-spectroscopy| 0.5-1.0eV 1.0eV~ 1H 2.0eV~ 3.0eV~ 4.0eV~ 5.0eV~(larger) Chlorine E' E'-alpha E'-betha E'-delta E'-gamma Germanium H(I) H(II) Hydrogen ODC ODC(I) ODC(II) OHC Oxygen POR Silicon amorphous dangling-bond dielectric interstitial pair(=2) surface triplet vacancy | last update: Takahide Umeda
- 107. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 108. Mater. Sci. Eng. B 54, 38-42 (1998) , “Detection and analysis of 29Si hyperfine structures in ESR spectra of E′ and E′-type centers in SiO2 glasses”, M. Mizuguchi, H. Hosono, H. KawazoeFour sets of ESR doublets with splittings of 9, 23, 26 or 44 mT were observed in dry a-SiO2 (Type IV, OH concentrations1017 cm−3) implanted with 29Si+ to a fluence of 6×1016 cm−2 at 160 keV. These doublets were attributed to the hyperfine structures due to a 29Si nucleus of... (Read more)
- 109. Nature 396, 58-60 (1998) , “Interface structure between silicon and its oxide by first-principles molecular dynamics”, A. Pasquarello, M. S. Hybertsen, R. CarThe requirement for increasingly thin (<50 Ã…) insulating oxide layers in silicon-based electronic devices highlights the importance of characterizing the Si–SiO2 interface structure at the atomic scale. Such a characterization relies to a large extent on an understanding of the atomic-scale mechanisms that govern the oxidation process. The widely used Deal–Grove model invokes a two-step process in which oxygen first diffuses through the amorphous oxide network before attacking the silicon substrate, resulting in the formation of new oxide at the buried interface1. But it remains unclear how such a process can yield the observed near-perfect interface2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12. Here we use first-principles molecular dynamics13, 14, 15 to generate a model interface structure by simulating the oxidation of three silicon layers. The resulting structure reveals an unexpected excess of silicon atoms at the interface, yet shows no bonding defects. Changes in the bonding network near the interface occur during the simulation via transient exchange events wherein oxygen atoms are momentarily bonded to three silicon atoms — this mechanism enables the interface to evolve without leaving dangling bonds. (Read more)
- 110. Nucl. Instrum. Methods Phys. Res. B 141, 566-574 (1998) , “Defect formation in amorphous SiO2 by ion implantation: Electronic excitation effects and chemical effects”, H. Hosono, N. MatsunamiIntrinsic defect formation in amorphous (a-) SiO2 by ion implantation was examined with emphasis upon electronic excitation effects and chemical reaction effects. 10 MeV proton beam and boron beam irradiated silica platelets to examine electronic excitation effects and chemical reaction effects. In... (Read more)
- 111. Phys. Rev. B 58, 15801-15809 (1998) , “Pb1 interface defect in thermal (100)Si/SiO2: 29Si hyperfine interaction”, A. Stesmans, B. Nouwen, V. V. Afanas’evAn optimized electron spin resonance study has resulted in the observation of the full angular dependence of the hyperfine interaction spectrum associated with the unpaired electron of the Pb1 point defect at the thermal (100)Si/SiO2 interface, showing that the dominant... (Read more)
- 112. Phys. Rev. Lett. 80, 317-320 (1998) , “Experimental Evidence for Frenkel Defect Formation in Amorphous SiO2 by Electronic Excitation”, H. Hosono, H. Kawazoe, N. MatsunamiConcentrations of defects in amorphous SiO2 created by implantation of 10 MeV protons were examined. The depth profile of Si-Si bonds, E? centers, or peroxy radicals (PORs) was close to that of electronic energy loss. Interstitial O2 molecules were identified and... (Read more)
- 113. Appl. Phys. Lett. 71, 3844-3846 (1997) , “H-complexed oxygen vacancy in SiO2: Energy level of a negatively charged state”, V. V. Afanas'ev and A. StesmansThe defects generated in SiO2 during irradiation with energetic (10 eV) photons were found to trap electrons at a level 3.1 eV below the oxide conduction band. The electron spin resonance data and the behavior upon hydrogen passivation indicate that the optically active state may be... (Read more)
- 114. IEEE Transactions on Electron Devices 44, 1002 (1997) , “A Quantitative Analysis of Time-Decay Reproducible Stress-Induced Leakage Current in SiO2 Films”, K. Sakakibara, N. Ajika, K. Eikyu, K. Ishikawa, H. Miyoshi
- 115. Appl. Phys. Lett. 69, 2252 (1996) , “Hole traps in oxide layers thermally grown on SiC”, V. V. Afanas'ev and A. StesmansHole trapping in the oxides thermally grown on different polytypes of SiC (3C, 4H, 6H) was studied using photogeneration of charge carriers in SiO2 and electron-spin-resonance spectroscopy. Oxygen vacancy defects were found to be the dominant hole traps in the oxide. Generation of... (Read more)
- 116. Appl. Phys. Lett. 67, 2179-2181 (1995) , “Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2”, J F. Conley, Jr., P. M. Lenahan, A. J. Lelis, T. R. OldhamWe provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can ``switch'' charge state in response to changes in the voltage applied to the gate of a... (Read more)
- 117. J. Appl. Phys. 75, 1047-1058 (1994) , “Generation aspects of the delocalized intrinsic EX defect in thermal SiO2”, A. Stesmans and F. ScheerlinckA K-band electron-spin-resonance study of the appearance of the delocalized intrinsic EX center in dry thermal SiO2 was performed on (001) and (111) Si/SiO2. The defect is found in both structures in nearly identical spin densities, 1.2×1012... (Read more)
- 118. J. Non-Cryst. Solids 179, 39-50 (1994) , “Paramagnetic resonance of E′-type centers in Si-implanted amorphous SiO2. Si29 hyperfine structure and characteristics of Zeeman resonances*1”, H. Hosono, H. Kawazoe, K. Oyoshi, S. TanakaElectron paramagnetic resonance spectra were measured on SiO2 glasses implanted with Si ions to a fluence of 6 × 1016 cm−2 at an acceleration voltage of 160 kV. Three sets of doublets with different separation were observed in Si29-implanted substrates and were ascribed to primary... (Read more)
- 119. J. Non-Cryst. Solids 179, 1-9 (1994) , “The many varieties of E′ centers: a review”, Robert A. WeeksThree varieties of E′ centers with a spin state, S = 1/2, and with a G-tensor, Gx Gy 2.0003, Gz 2.0018, were identified in the early reports on paramagnetic states in irradiated α-quartz. The atomic structure of two of these had an hydrogen ion (proton) in nearby sites and hence... (Read more)
- 120. Phys. Rev. B 50, 14710-14713 (1994) , “Defect-defect hole transfer and the identity of border traps in SiO2 films”, W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur, R. A. B. DevineWe have found evidence for hole-transfer events between oxygen-vacancy-related defects in thermal SiO2 films selectively injected with holes using electron paramagnetic resonance (EPR) and capacitance-voltage measurements. We find that hole injection into SiO2 films reveals two... (Read more)
- 121. Phys. Rev. Lett. 72, 2745-2748 (1994) , “Atomic Hydrogen Reactions with Pb Centers at the (100) Si/SiO2 Interface”, J. H. Stathis, E. CartierWe have investigated the reaction of atomic hydrogen with defects at the (100) Si/SiO2 interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, Pb0 and Pb1, are either passivated or produced by... (Read more)
- 122. Appl. Phys. Lett. 63, 920-922 (1993) , “Nature of Pb-like dangling-orbital centers in luminescent porous silicon”, F. C. Rong, J. F. Harvey, E. H. Poindexter, G. J. GerardiThe Pb-like dangling-orbit centers in luminescent porous silicon (LPSi) have been enhanced to very high concentration (1015 cm2) by gentle oxidation. High signal-to-noise ratio and very sharp lines enable the g-value maps, and... (Read more)
- 123. Appl. Phys. Lett. 63, 1510-1512 (1993) , “Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen”, E. Cartier, J. H. Stathis, and D. A. BuchananAtomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0" align="bottom">PbH and... (Read more)
- 124. Appl. Phys. Lett. 62, 40-42 (1993) , “Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon”, J. F. Conley and P. M. LenahanExposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E centers, into two hydrogen coupled complexes. These reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon... (Read more)
- 125. IEEE Transactions on Electron Devices 40, 986-993 (1993) , “Correlation of Stress-Induced Leakage Current in Thin Oxides with Trap Generation Inside the Oxides”, D. J. Dumin, J. R. Maddux
- 126. J. Appl. Phys. 74, 275-283 (1993) , “Characterization and depth profiling of E' defects in buried SiO2”, K. Vanheusden and A. StesmansOxygen-vacancy defects (E) generated at the surface of buried SiO2 (BOX) layers formed by O + implantation during the separation by implantation of oxygen process have been studied by electron spin resonance at 4.3 K. The E generation tool used was exposure to a... (Read more)
- 127. Phys. Rev. B 48, 2418-2435 (1993) , “Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship”, A. StesmansElectron-spin-resonance (ESR) studies of intrinsic Pb defects at the (111)Si/SiO2 interface have been carried out as a function of oxidation temperature Tox for the range 22<ToxTox and high-Tox... (Read more)
- 128. Phys. Rev. B 47, 10899-10902 (1993) , “Defects in porous p-type Si: An electron-paramagnetic-resonance study”, H. J. von Bardeleben, D. Stievenard, A. Grosman, C. Ortega, J. SiejkaThe defects in p+ porous silicon of low and high porosity have been studied by using electron-paramagnetic-resonance (EPR) spectroscopy and compared with an impurity analysis obtained from nuclear reaction analysis (NRA). The EPR measurements show, in both high- and low-porosity samples,... (Read more)
- 129. Appl. Phys. Lett. 61, 2887-2889 (1992) , “Identification of an interface defect generated by hot electrons in SiO2”, J. H. Stathis and D. J. DiMariaHot electrons in the gate dielectric (SiO2) of field effect transistors create defects at the Si/SiO2 interface. Using electrically detected magnetic resonance, we have identified a major component of these interface defects as the well-known Pb0 center. We... (Read more)
- 130. J. Non-Cryst. Solids 149, 137-160 (1992) , “Electron spin resonance characterization of self-trapped holes in amorphous silicon dioxide”, David L. GriscomThe electron spin resonance spectra of radiation-induced self-trapped holes (STHs) in amorphous silicon dioxide are isolated by isochromal annealing experiments and computer simulation analyses. Two distinct components, denoted STH1 and STH2 (plus a third component intermediate between the two),... (Read more)
- 131. Phys. Rev. B 45, 9501-9504 (1992) , “New intrinsic defect in as-grown thermal SiO2 on (111)Si”, A. StesmansK-band electron-spin resonance (ESR) has revealed an isotropic signal of g=2.002 46±0.000 03 in as-prepared SiO2 thermally grown on (111)Si in dry O2 at 700–860°C. The spectrum comprises a symmetric central signal of peak-to-peak width ??pp=1.0 G amid a... (Read more)
- 132. Phys. Rev. Lett. 67, 2517 (1991) , “Experimental evidence for excitonic mechanism of defect generation in high-purity silica”, T. E. Tsai and D. L. GriscomDirect evidence for the creation of oxygen-vacancy, oxygen-interstitial pairs in SiO2 glasses by an excitonic mechanism is developed from an electron-spin-resonance study of high-purity fused silicas exposed to highly focused 6.4-eV excimer laser light. (Read more)
- 133. IBM J.RES. DEVELOP. 34, 227-242 (1990) , “Internal probing of submicron FETs and photoemission using individual oxide traps”, P. Restle, A. Gnudi
- 134. IEEE Trans. Nucl. Sci. 37, 1650-1657 (1990) , “Spin dependent recombination: A 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 135. J. Non-Cryst. Solids 116, 289-292 (1990) , “Bleaching of peroxy radical in SiO2 glass with 5 eV light*1”, H. Hosono, R. A. WeeksPeroxy radical (POR) in SiO2 glass has been found to be bleached out by illumination with 5 eV light without accompanying changes in E′ and non-bridging oxygen hole centers. An absorption band centered at 4.8 eV (FWHM; ≈ 0.8 eV is also bleached together with POR. It is suggested that... (Read more)
- 136. J. Phys.: Condens. Matter 2, 6707 (1990) , “Theory of the structure of the self-trapped exciton in quartz”, A J Fisher, W Hayes and A M StonehamQuartz is an insulator with an extremely wide band gap in the vacuum ultra-violet. However, under irradiation from high-energy electrons or X-rays, samples of high purity emit a luminescence band in the blue, corresponding to a Stokes shift of approximately 7 eV. This large Stokes shift has been... (Read more)
- 137. Phys. Rev. B 42, 9664 (1990) , “Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2”, A. ShlugerThe transient volume change of ?-quartz and fused silica induced by irradiation with an electron pulse has been measured above 80 K. It is shown that transient changes of volume and optical absorption due to the E1? centers (oxygen vacancies) decay in parallel and that the... (Read more)
- 138. Phys. Rev. B 42, 3765 (1990) , “Observation of dipolar interactions between Pb0 defects at the (111) Si/SiO2 interface”, A. Stesmans, G. Van GorpDipole-dopole (DD) interactions between Pb0 (Si?Si3) defects at the two-dimensional (2D) (111) Si/SiO2 interface are revealed by electron-spin resonance. A DD fine-structure doublet develops with increasing [Pb0] resulting in a line shape characteristic of... (Read more)
- 139. Phys. Rev. B 42, 11352-11354 (1990) , “Source of 17O hyperfine broadening of the Pb resonance associated with the (111) Si-SiO2 interface”, K. L. BrowerThe Pb center is primarily a silicon dangling-bond type of defect at the (111) Si-SiO2 interface that is observable with electron paramagnetic resonance (EPR). Dry oxidation at 750 °C of (111) silicon with O2 enriched with 17O (I=5/2) to 51.26% is observed... (Read more)
- 140. Phys. Rev. B 41, 3794 (1990) , “Luminescence and defect formation in undensified and densified amorphous SiO2”, Chihiro Itoh, Toshio Suzuki, and Noriaki ItohLuminescence and optical absorption induced by an electron pulse and by a subsequent laser pulse have been studied in densified and undensified amorphous SiO2 at 77 K. We find that the decay of the optical-absorption change induced by an electron pulse consists of two components: one... (Read more)
- 141. IEEE Trans. Nucl. Sci. 36, 1800-1807 (1989) , “A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 142. Phys. Rev. B 39, 11183 (1989) , “Threshold energy for photogeneration of self-trapped excitons in SiO2”, Chihiro Itoh, Katsumi Tanimura, and Noriaki ItohThe excitation spectrum of the 2.8-eV luminescence band of crystalline SiO2 has been measured in a photon energy range between 6 and 14 eV at 77 K. We find that the onset of the 2.8-eV luminescence occurs at 8.3 eV, which is nearly equal to the fundamental optical absorption edge of... (Read more)
- 143. Phys. Rev. B 20, 1823 (1989) , “E? center in glassy SiO2: Microwave saturation properties and confirmation of the primary 29Si hyperfine structure”, David L. GriscomElectron-spin-resonance studies of a series of air-annealed samples of glassy SiO2 having various degrees of enrichment (or depletion) in the 29Si isotope have confirmed that a ?-ray-induced doublet of 420-G splitting is the 29Si hyperfine structure of the well-known... (Read more)
- 144. Semicond. Sci. Technol. 4, 1045-1060 (1989) , “Spin-dependent and localisation effects at Si/SiO2 device interfaces”, B. Henderson , M. Pepper , R. L. Vranch
- 145. J. Phys. C: Solid State Phys. 21, L431 (1988) , “The model of a triplet self-trapped exciton in crystalline SiO2”, A L ShlugerMaking use of the self-consistent quantum chemical calculations dealing with the many-electron models of a crystal with a defect, the author has shown that the triplet exciton self-trapping in crystalline SiO2 occurs due to the displacement by about 0.3 AA of an oxygen ion from a regular... (Read more)
- 146. J. Phys. C: Solid State Phys. 21, 1869 (1988) , “Transient optical absorption and luminescence induced by band-to-band excitation in amorphous SiO2”, K Tanimura, C Itoh and N ItohThe transient optical absorption and luminescence induced by irradiation of amorphous SiO2 with an electron pulse have been measured. It is found that the transient optical absorption spectra do not depend on impurities and have a strong peak at 5.3 eV and a satellite peak at 4.2 eV. The... (Read more)
- 147. Phys. Rev. B 38, 9674-9685 (1988) , “Hyperfine interactions in cluster models of the Pb defect center”, M. Cook, C. T. WhiteHyperfine interactions in the Pb center (denoted schematically as Si3?Si?) at the Si(111)/SiO2 interface have been studied with use of spin-polarized self-consistent multiple-scattering X? calculations on Si22H21/Si6O18... (Read more)
- 148. Appl. Phys. Lett. 50, 1663-1665 (1987) , “Electron spin resonance observation of defects in device oxides damaged by soft x rays”, B. B. Triplett, T. Takahashi, and T. SuganoWe report the use of vacuum soft x-ray (VXR) exposure to efficiently generate paramagnetic defects in thin oxide layers. The VXR technique allows the observation of an E related defect called the 74-G doublet in quantities as large as the E. This defect is the first paramagnetic... (Read more)
- 149. Appl. Phys. Lett. 50, 1450 (1987) , “Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator films”, W. E. CarlosElectron spin resonance measurements of silicon-on-insulator materials formed oxygen implantation are reported. The principal paramagnetic defect observed is a Pb center at the interface between Si and SiO2 precipitates in the Si film over the buried oxide layer.... (Read more)
- 150. J. Appl. Phys. 62, 4305-4308 (1987) , “Fundamental differences between thick and thin oxides subjected to high electric fields”, William L. Warren and P. M. LenahanWe observe atomic scale differences in the response of thin and thick oxides subjected to high electric fields. In stressed thick oxides, we observe the generation of a ``trivalent silicon'' trapped hole center, termed E; in stressed thin oxides no E centers were... (Read more)
- 151. J. Phys. C: Solid State Phys. 20, L367 (1987) , “Micro-emulsions in oil-water-surfactant mixtures: an Ising lattice gas model”, Kan Chen, C Ebner, C Jayaprakash and R PanditAn Ising lattice gas model is constructed for oil-water-surfactant mixtures. The phase diagram of this model is obtained by using mean-field theory and Monte Carlo simulations. The paramagnetic phase displays microstructures similar to those found in laboratory micro-emulsions. Also oil-rich,... (Read more)
- 152. Phys. Rev. B 36, 9638-9648 (1987) , “Theory of the Pb center at the <111> Si/SiO2 interface”, A. H. EdwardsWe present a series of semiempirical calculations on threefold-coordinated silicon at the ?111? Si/SiO2 interface. These were performed on finite clusters of atoms with use of hydrogen terminators in an unrestricted Hartree-Fock formalism wherein we include lattice relaxations. We have... (Read more)
- 153. Phys. Rev. Lett. 58, 1448 (1987) , “Selective Generation of Oriented Defects in Glasses: Application to SiO2”, J. H. StathisThe use of polarized light to generate oriented paramagnetic centers in glass is discussed. Analytic expressions are derived for the resultant EPR lineshape, and are compared to experimental results obtained for a-SiO2. Analysis of the EPR anisotropy provides information concerning the... (Read more)
- 154. Appl. Phys. Lett. 49, 348-350 (1986) , “Interface traps and Pb centers in oxidized (100) silicon wafers”, G. J. Gerardi, E. H. Poindexter, P. J. Caplan, N. M. JohnsonThe band-gap energy distribution of Pb centers on oxidized (100) Si wafers has been determined and compared with interface electrical trap density Dit. Two different Pb centers are observed on (100) Si: Pb0,... (Read more)
- 155. Appl. Phys. Lett. 48, 972-974 (1986) , “Electron spin resonance of [1-11], [-111], and [11-1] oriented dangling orbital Pb0 defects at the (111) Si/SiO2 interface”, A. StesmansThe observation of (111) Si/SiO2 interface Pb0 defects (modeled as 0SiSi3) with dangling bonds positioned along [11], [11], and [11] from low-temperature (T30 K) electron spin resonance measurements is reported. This is connected with... (Read more)
- 156. J. Appl. Phys. 59, 3255-3266 (1986) , “Thermodynamic and Kinetic Considerations on the Equilibrium Shape for Thermally Induced Microdefects in Czochralski Silicon”, W. A. Tiller, S. Hahn, F. A. Ponce.Using thermodynamic and kinetic considerations, we explain the quasiequilibrium, morphological, and structural characteristics of thermally induced oxide precipitates in Czochralski silicon. A model based upon the formation of Frenkel defects at the silicon/silica interface is used to explain the... (Read more)
- 157. J. Phys. C: Solid State Phys. 19, 6211 (1986) , “Charge-trapping properties of germanium in crystalline quartz”, W Hayes and T J L JenkinGermanium impurity in alpha -quartz as a well known deep electron trap and hence makes possible the study of hole trapping processes by EPR techniques. The authors have carried out an EPR study of SiO2:Ge X-irradiated in a microwave cavity at 4K and show that Ge is an amphoteric impurity... (Read more)
- 158. Phys. Rev. B 34, 7524-7533 (1986) , “Fundamental radiation-induced defect centers in synthetic fused silicas: Atomic chlorine, delocalized E' centers, and a triplet state”, D. L. Griscom and E. J. FriebeleA series of synthetic fused silicas of diverse OH contents was subjected to 100-keV x irradiations at 77 K and investigated by electron-spin-resonance techniques at ?110 K or higher temperatures. Spectra were recorded at X-band frequencies (?9.2–9.3 GHz) both as the first derivative of absorption... (Read more)
- 159. Phys. Rev. B 34, 3610-3619 (1986) , “Dipolar interactions between dangling bonds at the (111) Si-SiO2 interface”, K. L. Brower, T. J. HeadleyIn this paper a computational model is developed which allows one to calculate the contribution to the Zeeman linewidth arising from magnetic dipole-dipole interactions between unpaired electrons in the dilute limit, which in our specific application correspond to dangling bonds (Pb... (Read more)
- 160. Phys. Rev. B 33, 4471 (1986) , “Strain broadening of the dangling-bond resonance at the (111) Si-SiO2 interface”, K. L. BrowerIt is observed that the linewidth and line shape of the Zeeman resonance associated with dangling bonds at the (111)Si-SiO2 interface (Pb centers) vary with the direction of the applied magnetic field. An analysis of the line shape of this resonance indicates that it can be... (Read more)
- 161. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
- 162. J. Appl. Phys. 57, 5176 (1985) , “Damage center formation in SiO2 thin films by fast electron irradiation”, R. L. PfefferThe concentrations of E centers (ESR-active oxygen vacancies) produced by 30160 keV electron irradiation have been measured in thermal SiO2 films at doses far exceeding any previously reported. The dependences of these concentrations on electron energy and fluence were... (Read more)
- 163. Appl. Phys. Lett. 44, 96-98 (1984) , “Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures”, P. M. Lenahan and P. V. DressendorferWe find that two paramagnetic ``trivalent silicon'' centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures. Applied Physics Letters is copyrighted by The American Institute of Physics. ... (Read more)
- 164. Appl. Phys. Lett. 44, 228-230 (1984) , “Optically induced electron spin resonance and spin-dependent recombination in Si/SiO2”, B. HendersonIn state-of-the-art Si/SiO2 wafers the concentration of paramagnetic interface states (1010 cm2) is almost too low to be detected by electron spin resonance (ESR). This letter describes experiments which show that the ESR signal of singly occupied dangling bond... (Read more)
- 165. J. Appl. Phys. 56, 2844-2849 (1984) , “Electronic traps and Pb centers at the Si/SiO2 interface: Band-gap energy distribution”, E. H. Poindexter, G. J. Gerardi, M. -E. Rueckel, P. J. Caplan, N. M. Johnson, D. K. BiegelsenEnergy distribution of Pb centers (·SiSi3) and electronic traps (Dit) at the Si/SiO2 interface in metal-oxide-silicon (MOS) structures was examined by electric-field-controlled electron paramagnetic resonance (EPR)... (Read more)
- 166. J. Appl. Phys. 55, 3495-3499 (1984) , “Hole traps and trivalent silicon centers in metal/oxide/silicon devices”, P. M. Lenahan and P. V. DressendorferWe report electron spin resonance (ESR) measurements of E-center (a ``trivalent silicon'' center in SiO2) density as well as capacitance versus voltage (C-V) measurements on -irradiated metal/oxide/silicon (MOS) structures. We also report a considerable refinement of... (Read more)
- 167. J. Phys. C: Solid State Phys. 17, 2943 (1984) , “ODMR of recombination centres in crystalline quartz”, W Hayes, M J Kane, O Salminen, R L Wood and S P DohertyThe well known 2.8 eV luminescence band in quartz has been studied using optically detected magnetic resonance (ODMR). A triplet state with a very large fine-structure splitting is found to contribute to the emission. The principle axes of the triplet are identified. The possibility that the... (Read more)
- 168. J. Phys. Chem. 88, 5255-5260 (1984) , “Dynamic Interchange among Three States of Phosphorus (4+) in ?-Quartz. 2.”, Y. Uchida, J. Isoya, J. A. WeilThe dynamic process due to electron jumping among three states with different sp hybrid directions in the quasitetrahedral P4+ center [PO4]0 in a-quartz has been investigated by 10-GHz electron paramagnetic resonance, over the temperature range 40 to 400 K. The relative populations (mole fractions ƒІ and ƒІІ) of the ground state P(І) and two degenerate thermally excited states P(ІІ) were determined from the measured EPR absorption line intensity ratios and from the line positions of the averaged state P(A), respectively, in the slow and fast kinetic regions. The temperature dependence of the mole fractions has been explained by considering vibrational sublevels in the potential well describing each state. The jump rate was also obtained, via EPR absorption line-width analysis based on the Bloch equations, in both the slow and the fast regions. The characteristic parameters of the dynamic process, Le., energy separation and vibrational sublevels of the ground and excited states, and barrier height between these, have been determined. (Read more)
- 169. Surf. Sci. 141, 255-284 (1984) , “X AND K BAND ESR STUDY OF THE Pb INTERFACE CENTRES IN THERMALLY OXIDIZED p-TYPE (001)Si WAFERS AT LOW TEMPERATURES AND INFLUENCE OF MEDIUM-DOSE As+ ION IMPLANTATION”, A. Stesmans, J. Braet, J. Witters, R. F. DekeersmaeckerElectron spin resonance (ESR) experiments have been carried out at cryogenic temperatures (4.2 T 35 K) and room temperatures at 9.0 and 20.9 GHz on the Pb0 and Pb1 (commonly referred to as Pb) spin-active defects residing at the Si/SiO2 interface. The ESR lineshapes were shown to display gaussian... (Read more)
- 170. Appl. Phys. Lett. 43, 563-565 (1983) , “Characteristic electronic defects at the Si-SiO2 interface”, N. M. Johnson, D. K. Biegelsen, M. D. Moyer, S. T. Chang, E. H. Poindexter, P. J. CaplanOn unannealed, thermally oxidized silicon, electron spin resonance reveals an oriented interface defect which is termed the Pb center and identified as the trivalent silicon defect. Deep level transient spectroscopy (DLTS) reveals two broad characteristic peaks in the... (Read more)
- 171. Appl. Phys. Lett. 43, 1111 (1983) , “29Si hyperfine structure of unpaired spins at the Si/SiO2 interface”, K. L. BrowerThe hyperfine spectrum associated with unpaired electrons at the (111) Si/SiO2 interface (Pb centers) is reported for the first time. Electron paramagnetic resonance measurements indicate that the hyperfine interaction S··I arises from the... (Read more)
- 172. Phys. Rev. Lett. 51, 423 (1983) , “Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2”, Katsumi Tanimura, Takeshi Tanaka, and Noriaki ItohThe transient volume change of ?-quartz and fused silica induced by irradiation with an electron pulse has been measured above 80 K. It is shown that transient changes of volume and optical absorption due to the E1? centers (oxygen vacancies) decay in parallel and that the... (Read more)
- 173. Appl. Phys. Lett. 41, 542-544 (1982) , “Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface”, P. M. Lenahan and P. V. DressendorferElectron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic Pb centers with bais. We conclude that... (Read more)
- 174. Appl. Phys. Lett. 41, 251-253 (1982) , “Defects and impurities in thermal oxides on silicon”, K. L. Brower, P. M. Lenahan, and P. V. DressendorferOxides grown at 1100 °C in dry oxygen for 60 min to a thickness of 1350 Å on silicon with and without subsequent forming gas anneals were 60Co irradiated at 4 K with doses up to 106 rad (Si). In situ electron paramagnetic... (Read more)
- 175. J. Appl. Phys. 52, 879-884 (1981) , “Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers”, E. H. Poindexter, P. J. Caplan, B. E. Deal, R. R. RazoukInterface states and electron spin resonance centers have been observed and compared in thermally oxidized (111) and (100) silicon wafers subjected to various processing treatments. The ESR Pb signal, previously assigned to interface ·SiSi3 defects on (111)... (Read more)
- 176. J. Chem. Phys. 74, 5436-5448 (1981) , “EPR and ab initio SCF–MO studies of the Si·H–Si system in the E[prime]4" align="middle"> center of -quartz”, J. Isoya, J. A. Weil, L. E. HalliburtonThe E[prime]4" align="middle"> center in irradiated -quartz has been studied by single-crystal EPR. The unpaired electron is shared mainly by two silicon ions Si(1, 2) with the larger fraction on Si(2). The spin-Hamiltonian parameter matrices , 1H,... (Read more)
- 177. J. Appl. Phys. 50, 5847-5854 (1979) , “ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers”, P. J. Caplan, E. H. Poindexter, B. E. Deal, R. R. RazoukThe ESR Pb center has been observed in thermally oxidized single-crystal silicon wafers, and compared with oxide fixed charge Qss and oxidation-induced interface states Nst. The Pb center is found to be located... (Read more)
- 178. J. Non-Cryst. Solids 32, 327-338 (1979) , “ELECTRON SPIN RESONANCE AND HOPPING CONDUCTIVITY OF a-SiOx”, E. Holzenkämpfer, F. -W. Richter, J. Stuke, U. Voget-GroteAmorphous SiOx-layers with O < x < 2 have been prepared by evaporation of Si at oxygen pressures of 10−6 … 10−3 mbar. The composition of the samples was determined by proton backscattering. The band gap, derived from optical measurements, increases with rising oxygen... (Read more)
- 179. J. Non-Cryst. Solids 32, 313-326 (1979) , “OXYGEN-ASSOCIATED TRAPPED-HOLE CENTERS IN HIGH-PURITY FUSED SILICAS”, M. Stapelbroek, D. L. Griscom, E. J. Friebele and G. H. Sigel, Jr.Two distinct oxygen-associated trapped-hole centers (OHCs) are identified in samples of room-temperature γ-irradiated, high-purity fused silica. One, which we label the "wet" OHC, predominates in the high-OH-content (wet) silicas while the other, the "dry" OHC, is more... (Read more)
- 180. J. Phys. Chem. 83, 3462-3467 (1979) , “Dynamic Interchange among Three States of Phousphorus 4+ in ?-Quartz”, Y. Uchida, J. Isoya, J. A. WeilDynamic averaging due to electron jumping among three states with different sp hybrid directions in the P4+ center [PO4]0 in α-quartz has been studied by single-crystal electron paramagnetic resonance. The spin-Hamiltonian matrices g and Aslp for low temperature (i.e., C140 K) spectra P(І) and P(â…¡) and for high temperature spectrum P(A) are reported. For each crystal site, the line positions of P(A) agree well with those derived from the matrices measured for the three states. i.e., with weighted averages including P(І) and the two symmetry-related P(â…¡) spectra. (Read more)
- 181. J. Phys. Soc. Jpn. 43, 1286 (1977) , “Phase Diagram of an Exciton in the Phonon Field ”, Atsuko SumiIt is shown that an electron and a hole interacting mutually through the Coulomb force in the acoustic-phonon field take, within the adiabatic approximation, four possible phases depending upon the coupling constants: the lowest state is the free exciton in phase[I], the large-radius self-trapped... (Read more)
- 182. Jpn. J. Appl. Phys. 10, 52-62 (1971) , “Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I”, Y. NishiThree kinds of paramagnetic centers named PA, PB and PC have been found in a silicon-silicon dioxide structure at liquid nitrogen temperature. PA (g=∼2.000, ΔH=∼4 Oe), and PB having anisotropic g-value... (Read more)
- 183. Jpn. J. Appl. Phys. 5, 333 (1966) , “Electron Spin Resonance in SiO2 Grown on Silicon”, Y. NishiRecently there has been much interest in the behavior of space charge in SiO2 on silicon. Based on the generation and motion of charged species,structural models have been proposed by Seraphimet al. and by Revesz. In the present study electron spin resonance absorption has been... (Read more)
« Previous
Next »
(183 hits, 1/1)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)