Papers - tagged 'SiGe' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=SiGe&method=&defect=&sb=u
Papers - Defect dat@base2007-11-05T19:58:22+09:00Fluorine-vacancy complexes in Si-SiGe-Si structures
http://dx.doi.org/10.1063/1.2753573
D. A. Abdulmalik, P. G. Coleman, H. A. W. El Mubarek, and P. Ashburn, J. Appl. Phys. 102, 013530 (2007) 2007-11-05T19:58:22+09:00Multiscale modeling of point defects in Si-Ge(001) quantum wells
http://dx.doi.org/10.1103/PhysRevB.75.144103
B. Yang and V. K. Tewary, Phys. Rev. B 75, 144103 (2007) 2007-06-27T20:07:36+09:00Ab initio models of amorphous Si1−xGex:H
http://dx.doi.org/10.1103/PhysRevB.75.045201
T. A. Abtew and D. A. Drabold, Phys. Rev. B 75, 045201 (2007) 2007-06-25T16:24:01+09:00Theoretical investigation of a Mn-doped Si/Ge heterostructure
http://dx.doi.org/10.1103/PhysRevB.75.075316
J. T. Arantes, Antônio J. R. da Silva, A. Fazzio, and A. Antonelli, Phys. Rev. B 75, 075316 (2007) 2007-06-18T12:08:47+09:00Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures
http://dx.doi.org/10.1103/PhysRevB.59.13242
C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. Schffler, Phys. Rev. B 59, 13242 (1999) 2007-04-05T15:05:22+09:00Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique
http://dx.doi.org/10.1063/1.2470722
B. Vincent, J.-F. Damlencourt, V. Delaye, R. Gassilloud, L. Clavelier, and Y. Mor, Appl. Phys. Lett. 90, 074101 (2007) 2007-02-22T14:36:09+09:00Threading dislocation reduction by SiGeC domains in SiGe/SiGeC heterostructure: Role of pure edge dislocations
http://dx.doi.org/10.1063/1.2402227
L. H. Wong, C. Ferraris, C. C. Wong, and J. P. Liu, Appl. Phys. Lett. 89, 231906 (2006) 2006-12-23T12:58:39+09:00Interaction of iron with the local environment in SiGe alloys investigated with Laplace transform deep level spectroscopy
http://dx.doi.org/10.1103/PhysRevB.74.195204
Vl. Kolkovsky, A. Mesli, L. Dobaczewski, N. V. Abrosimov, Z. R. ytkiewicz, and A. R. Peaker, Phys. Rev. B 74, 195204 (2006) 2006-12-14T15:17:20+09:00Depth profiling of strain and defects in Si/Si1–xGex/Si heterostructures by micro-Raman imaging
http://dx.doi.org/10.1063/1.2355431
T. Mitani, S. Nakashima, H. Okumura, and A. Ogura, J. Appl. Phys. 100, 073511 (2006) 2006-11-09T17:49:06+09:00Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well
http://dx.doi.org/10.1103/PhysRevLett.97.066602
Junya Matsunami, Mitsuaki Ooya, and Tohru Okamoto, Phys. Rev. Lett. 97, 066602 (2006) 2006-11-07T18:54:19+09:00High spatial resolution mapping of partially strain-compensated SiGe:C films in the presence of postannealed defects
http://dx.doi.org/10.1063/1.2201730
A. V. Darahanau, A. Benci, A. Y. Nikulin, J. Etheridge, J. Hester, and P. Zaumseil, J. Appl. Phys. 99, 113531 (2006) 2006-10-26T12:34:15+09:00Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process
http://dx.doi.org/10.1063/1.2240111
Dong Wang, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, and Masahiko Nakamae, Appl. Phys. Lett. 89, 041916 (2006) 2006-08-24T11:00:57+09:00Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys
http://dx.doi.org/10.1063/1.2193802
R. N. Pereira, B. Bech Nielsen, J. Coutinho, V. J. B. Torres, P. R. Briddon, Appl. Phys. Lett. 88, 142112 (2006) 2006-08-03T14:51:42+09:00