Papers - tagged 'SiC SI5 semi-insulating' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=SiC&method=&defect=SI5+semi-insulating&sb=u
Papers - Defect dat@base2010-01-18T17:38:37+09:00Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC
http://dx.doi.org/10.1103/PhysRevLett.96.145501
T. Umeda, N. T. Son, J. Isoya, E. Janzn, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. Bockstedte, Phys. Rev. Lett. 96, 145501 (2006) 2010-01-18T17:38:37+09:00Divacancy in 4H-SiC
http://dx.doi.org/10.1103/PhysRevLett.96.055501
2006-11-06T18:59:36+09:00Defects in SiC
http://dx.doi.org/10.1016/j.physb.2003.09.001
2006-03-10T18:22:26+09:00Annealing of vacancy-related defects in semi-insulating SiC
http://dx.doi.org/10.1103/PhysRevB.70.201204
U. Gerstmann, E. Rauls, and H. Overhof, Phys. Rev. B 70, 201204(R) (2004) 2006-03-10T16:55:32+09:00Defects in high-purity semi-insulating SiC
http://esrlab.jp/div-media/defect/index.php?q=&material=SiC&method=&defect=SI5+semi-insulating&sb=u&id=2204#2204
2006-03-09T07:57:17+09:00