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- 1. Phys. Rev. B 77, 195204 (2008) , “Identification of antisite carbon split-interstitial defects in 4H-SiC”, J. W. Steeds, W. SullivanA rich variety of optical centers with high energy local vibrational modes has been found in electron-irradiated 4H-SiC in both the as-irradiated and annealed states. These energies have been measured and the annealing dependence of the optical centers has been investigated by low-temperature... (Read more)
- 2. Phys. Rev. B 77, 195203 (2008) , “Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC”, J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. WellmannThis paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at... (Read more)
- 3. Phys. Rev. B 77, 085120 (2008) , “Identification of the carbon antisite in SiC: EPR of 13C enriched crystals”, Pavel G. Baranov, Ivan V. Ilyin, Alexandra A. Soltamova, and Eugene N. MokhovAn electron paramagnetic resonance spectrum with axial symmetry along c axis, spin S=1/2 and strong hyperfine interaction with one carbon atom has been observed in neutron-irradiated and annealed 6H-SiC, 13C isotope enriched. The 13C concentration was... (Read more)
- 4. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. OhshimaThe structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
- 5. Appl. Phys. Lett. 90, 062113 (2007) , “Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers”, I. Pintilie, U. Grossner, B. G. Svensson, K. Irmscher, and B. ThomasNitrogen doped 4H-SiC epitaxial layers were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons. The influence of C/Si ratio, N doping level, and growth rate on the behavior of the prominent Z1,2 and EH6,7 levels during... (Read more)
- 6. J. Appl. Phys. 101, 013707 (2007) , “Vanadium donor and acceptor levels in semi-insulating 4H- and 6H-SiC”, W. C. Mitchel, W. D. Mitchell, G. Landis, H. E. Smith, Wonwoo Lee, and M. E. ZvanutThe electronic levels of vanadium in semi-insulating 4H- and 6H-SiC have been reinvestigated using temperature dependent Hall effect and resistivity measurements at temperatures up to 1000 K in conjunction with electron paramagnetic resonance (EPR) and optical absorption measurements... (Read more)
- 7. Phys. Rev. B 75, 245202 (2007) , “Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC”, T. Umeda, J. Ishoya, T. Ohshima, N. Morishita, H. Itoh, and A. GaliAn antisite-vacancy pair and a monovacancy are a set of fundamental stable and/or metastable defects in compound semiconductors. Theory predicted that carbon antisite-vacancy pairs would be much more stable in p-type SiC than silicon vacancies and that they would be a common defect. However,... (Read more)
- 8. Phys. Rev. B 75, 085416 (2007) , “Ab initio theoretical study of hydrogen and its interaction with boron acceptors and nitrogen donors in single-wall silicon carbide nanotubes”, A. GaliSilicon carbide nanotubes have a great potential for biological applications. It is of interest to explore the electronic properties of these nanotubes, and how those are modified in the presence of impurities. Hydrogen is a common impurity that can appear during the growth of silicon carbide... (Read more)
- 9. Phys. Rev. B 75, 085208 (2007) , “Clustering of vacancy defects in high-purity semi-insulating SiC”, R. Aavikko, K. Saarinen, F. Tuomisto, B. Magnusson, N. T. Son, and E. JanzénPositron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the... (Read more)
- 10. Phys. Rev. B 75, 073409 (2007) , “Why thermal H2 molecules adsorb on SiC(001)-c(4×2) and not on SiC(001)-(3×2) at room temperature”, Xiangyang Peng, Peter Krüger, and Johannes PollmannIn a recent experiment, Derycke et al. have made the exciting observation that H2 molecules readily adsorb dissociatively on the c(4×2) but not on the 3×2 surface of SiC(001) at room temperature. To unravel this spectacular reactivity difference, we have investigated a... (Read more)
- 11. Phys. Rev. B 75, 045211 (2007) , “Ab initio supercell calculations on aluminum-related defects in SiC”, A. Gali, T. Hornos, N. T. Son, E. Janzén, and W. J. ChoykeAb initio supercell calculations of the binding energies predict complex formation between aluminum and carbon interstitials in SiC. In high-energy implanted SiC aluminum acceptor can form very stable complexes with two carbon interstitials. We also show that carbon vacancy can be attached to... (Read more)
- 12. Phys. Rev. Lett. 98, 026101 (2007) , “Bonding at the SiC-SiO2 Interface and the Effects of Nitrogen and Hydrogen”, Sanwu Wang, S. Dhar, Shu-rui Wang, A. C. Ahyi, A. Franceschetti, J. R. Williams, L. C. Feldman,, and Sokrates T. PantelidesUnlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to... (Read more)
- 13. Appl. Phys. Lett. 89, 231906 (2006) , “Threading dislocation reduction by SiGeC domains in SiGe/SiGeC heterostructure: Role of pure edge dislocations”, L. H. Wong, C. Ferraris, C. C. Wong, and J. P. LiuThe authors previously reported an unusual phenomenon of strain relaxation accompanied by a reduction in threading dislocation density (TDD) on a Si0.77Ge0.23 layer grown on top of alternating layers of... (Read more)
- 14. Appl. Phys. Lett. 89, 223502 (2006) , “Identification of trapping defects in 4H-silicon carbide metal-insulator-semiconductor field-effect transistors by electrically detected magnetic resonance”, Morgen S. Dautrich, Patrick M. Lenahan, and Aivars J. LelisIn conventional Si/SiO2-based metal oxide semiconductor devices, performance-limiting semiconductor/dielectric interface traps are localized precisely at the Si/SiO2 boundary. The authors show that in high-quality SiC/SiO2-based devices, this is not necessarily the... (Read more)
- 15. Appl. Phys. Lett. 89, 222103 (2006) , “Comparison of near-interface traps in Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC structures”, Marc Avice, Ulrike Grossner, Ioana Pintilie, Bengt G. Svensson, Ola Nilsen, and Helmer FjellvagAluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of capacitance-voltage and thermal dielectric relaxation current measurements, the interface... (Read more)
- 16. Appl. Phys. Lett. 89, 211114 (2006) , “Site selective studies of Er3+ emission centers in Er-implanted 6H-SiC”, V. Glukhanyuk and A. KozaneckiIn this work the high resolution site selective photoluminescence (PL) using Fourier transform spectrometer and PL excitation spectra near 1.54 µm in Er-implanted 6H-SiC were investigated. Direct evidence for the existence of three different Er3+ emitting centers... (Read more)
- 17. Appl. Phys. Lett. 89, 103519 (2006) , “Observation of a multilayer planar in-grown stacking fault in 4H-SiC p-i-n diodes”, Joshua D. Caldwell, P. B. Klein, Mark E. Twigg, Robert E. Stahlbush, Orest J. Glembocki, Kendrick X. Liu, Karl D. Hobart, and Fritz KubIn-grown stacking faults (IGSFs) are planar defects that do not propagate under either an applied optical or electrical bias; however, their effect upon the electrical characteristics of diodes is not well understood. We present evidence for a multilayered IGSF and discuss its electrical and optical... (Read more)
- 18. Appl. Phys. Lett. 88, 212112 (2006) , “Reliability of thermally oxidized SiO2/4H-SiC by conductive atomic force microscopy”, Patrick Fiorenza and Vito RaineriThe dielectric breakdown (BD) kinetics of silicon dioxide (SiO2) thin films thermally grown on 4H-SiC was determined by comparison between I-V measurements on large area (up to 1.96×105 cm2) metal-oxide-semiconductor structures and... (Read more)
- 19. Appl. Phys. Lett. 88, 191904 (2006) , “Luminescence from Nd- and Dy-ion-implanted 4H–SiC”, Shinji Kawai, Takayoshi Masaki, Yoshimine Kato, and Teruaki MotookaCathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4HSiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after... (Read more)
- 20. Appl. Phys. Lett. 88, 153509 (2006) , “Deep energy levels in RuO2/4H–SiC Schottky barrier structures”, L. Stuchlikova, D. Buc, L. Harmatha, U. Helmersson, W. H. Chang, I. BelloRuO2/4HSiC Schottky diode structures based on n-type 4HSiC (7×1017 cm3) with stoichiometric RuO2 Schottky contacts were characterized by electrical capacitance-voltage and current voltage methods and deep-level transient... (Read more)
- 21. Appl. Phys. Lett. 88, 121914 (2006) , “Effect of C/Si ratio on deep levels in epitaxial 4H–SiC”, C. W. Litton, D. Johnstone, S. Akarca-Biyikli, K. S. Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. SchubertChanging the ratio of carbon to silicon during the epitaxial 4HSiC growth is expected to alter the dominant deep level trap, which has been attributed to a native defect. The C/Si ratio was changed from one to six during epitaxial growth of SiC. Diodes fabricated on the epitaxial layer were... (Read more)
- 22. Appl. Phys. Lett. 88, 092108 (2006) , “Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC/SiO2 interfaces in oxidized porous SiC”, J. L. Cantin, H. J. von Bardeleben, Yue Ke, R. P. Devaty, W. J. ChoykeThe effect of forming gas and vacuum annealing on the concentration of carbon dangling bond (PbC) centers at 3C- and 4H-SiC/SiO2 interfaces has been studied by electron paramagnetic resonance (EPR) spectroscopy. Our results show efficient passivation at 400 °C and... (Read more)
- 23. Appl. Phys. Lett. 88, 082113 (2006) , “Effect of charge on the movement of dislocations in SiC”, T. A. G. Eberlein, R. Jones, A. T. Blumenau, S. Öberg, P. R. BriddonSiC bipolar devices show a degradation under forward-biased operation which has been linked with a current induced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and... (Read more)
- 24. Appl. Phys. Lett. 88, 052110 (2006) , “Lifetime-limiting defects in n– 4H-SiC epilayers”, P. B. Klein, B. V. Shanabrook, S. W. Huh, A. Y. Polyakov, M. Skowronski, J. J. Sumakeris, M. J. O'LoughlinLow-injection minority carrier lifetimes (MCLs) and deep trap spectra have been investigated in n 4H-SiC epilayers of varying layer thicknesses, in order to enable the separation of bulk lifetimes from surface recombination effects. From the linear dependence of the inverse... (Read more)
- 25. Appl. Phys. Lett. 88, 021907 (2006) , “Nitrogen incorporation characteristics on a 4H-SiC epitaxial layer”, Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, and Kazuo AraiThe N incorporation characteristics on a 4H-SiC epitaxial layer were reinvestigated. It was found that the desorption process and thermally activated process are aspects of the N incorporation mechanism of 4H-SiC to which attention should be paid. This mechanism depends on both the rate-limiting... (Read more)
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